• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1050-1053
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• 2004

Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.10
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• pp.187-194
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• 2002

A study on machining electrode for LED (Light Emitted Diode) mold with shaped end-mill is presented. The electrode machining by shaped end-mill has been used for maximizing the productivity in manufacturing semiconductor mold. However, it has not been researched systematically for many difficulties such as the making of shaped end-mill, generation of tool path due to distinctive tool geometry, and so on. Tool path is generated on geometry of the shaped end-mill and cutting force to provide accurate and efficient machining of electrode. The verification program can drive enhancement of productivity, selecting cutting conditions from experiment function of cutting force. Also, compensation of tooling and maching error can make the electrode accurately by modifying tool path. Therefore, the research on machining with shaped end-mill can contribute to enhancement of accuracy and productivity in building semiconductor mold.

• Journal of the Korean Applied Science and Technology
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• v.21 no.4
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• pp.274-278
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• 2004

In this study, hetero-electrode structures have been fabricated to increase luminescence efficiency. The presence of a thin layer of Sn or Ag at the organic-aluminum interface enhanced both electron injection efficiency and electroluminescence when compared to OLEDs using homogeneous electrode. In this paper, the effect of the cathode using Sn/Al hetero electrode structure is observed. Electric properties of the OLED using Sn/Al hetero cathode are improved in comparison of only Al cathode. The hetero-electrode existing different energy level induces the advanced structure of OLED can accumulate electron density. The luminescence efficiency of OLED with Sn/Al of Ag/Al cathode is higher because of their higher electron injection efficiency. And, the turn on voltage of the OLED device using Sn thin layer is lowest as about 10 V.

• Toxicological Research
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• v.33 no.2
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• pp.135-140
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• 2017

The cobalt (Co(II)) ion is a main component of alloys and considered to be carcinogenic, especially due to the carcinogenic and toxicological effects in the aquatic environment. The toxic trace of the Co(II) detection was conducted using the infrared photodiode electrode (IPDE) using a working electrode, via the cyclic and square-wave anodic stripping voltammetry. The results indicated a sensitive oxidation peak current of Co(II) on the IPDE. Under the optimal conditions, the common-type glassy carbon, the metal platinum, the carbon paste, and the carbon fiber microelectrode were compared with the IPDE in the electrolyte using the standard Co(II). The IPDE was found to be far superior to the others.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2227-2229
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• 1999

As a direct-view flat panel displays, there are many devices, such as plasma display panels(PDPs), vacuum fluorescent displays (VFDs), and light emitting diode(LED). Among these, a PDP is the first type of panel display to be made commercially available. A 'Plasma display' is the general term for a flat display utilizing the light emission that is produced by gas discharge. However, the brightness and Luminous efficiency are still not adequate for consumer television. So, the new sustain electrode type of ac PDP was proposed. By arranging the transparent electrode of quadrangle by zigzag, the area of electrode are reduced, and the length of electrode gap is increased. It generates a high luminous efficiency(corresponding to a 40% improvement of standard type), the same discharge voltage characteristics, and the low power consumption at same luminance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.3
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• pp.654-659
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• 2011

We propose a novel method to reduce laser chirp and improve modulation performance in semiconductor laser by using dual-electrode structure. Dual-electrode structure is realized by segmenting a electrode on top of gain medium, as was the case of edge emitting laser diode, into electrically isolated two electrodes. By using the proposed structure, we have experimentally achieved a reduction of laser spectral width of 0.23 nm and an improvement of 2.5-dB receiver sensitivity at an 80-km fiber transmission for 10-Gbps NRZ (non-return-to zero) data stream.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.23-27
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• 2006

Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).