• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.59-64
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• 2008

In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.204-209
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• 2007

We synthesized a series of $CaS_{1-x}Se_x:Eu$ red-emitting phosphors for application in phosphor-converted three-band white light emitting diode(LED). The photoluminescence and structural properties of $CaS_{1-x}Se_x:Eu$ were examined. The $CaS_{1-x}Se_x:Eu$ phosphors have a strong absorption at 455 nm, which is the emission wavelength of a blue LED. CaS:Eu has a red omission peak at 651 nm due to the $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ transition of the $Eu^{2+}$. The emission peak of $CaS_{1-x}Se_x:Eu$ is shifted from 651 to 598 nm with increasing Se content. $CaS_{1-x}Se_x:Eu$ can be used as wavelength-tunable red-emitting phosphors pumped by a blue LED. We also fabricated a three-band white LED by doping $SrGa_2S_4:Eu$ and $CaS_{0.50}Se_{0.50}:Eu$ phosphors onto a blue LED chip.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.18-21
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• 2017

In this study, spherical monodispersed cerium-doped yttrium aluminum garnet (YAG : $Ce^{3+}$) phosphor particles were synthesized via homogeneous precipitation method using the mixed solution of yttrium nitrate, cerium nitrate, aluminum nitrate, ammonium aluminum sulfate, and urea as a precipitant. During the process of precursors of monodispersed YAG : $Ce^{3+}$, aluminum ions which form spherical aluminum compounds precipitated first and yttrium compounds precipitated onto the surface of the existing spherical aluminum compounds. Drying process using lyophilization could obtain monodispered spherical YAG : $Ce^{3+}$ particles compare to using oven. The thermal calcination process of YAG : $Ce^{3+}$ precursors under the temperature of $1200^{\circ}C$ for 6 h was enough to obtain 400~500 nm sized YAG particles with pure YAG phase.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.12-18
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• 2008

Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.1
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• pp.7-14
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• 2008

In this paper, we propose VATL(Voltage-controlled Artificial Transmission Line) employing periodically loaded diodes for application to on-chip matching components on MMIC. Compared with conventional microstrip line, the VATL showed a much shorter wave length due to periodic capacitance of diodes, and the characteristic impedance of the VATL was easily controlled bγ changing supplied voltage. Concretely, the characteristic impedance of the VATL was changed from $80{\sim}20{\Omega}$ in a range of $0{\sim}1.05V$ and the VATL showed a wavelength of 1.5mm at 20GHz, while conventional microstrip line showed a wavelength of 5.3mm at the same frequency. Using the VATL, a ${\lambda}/4$ impedance transformer was fabricated on GaAs MMIC for application to on-chip matching components on MMIC. Using the ${\lambda}/4$ impedance transformer made it possible to perform impedance matching between RF components with various characteristic impedance of $30{\sim}100{\Omega}$ by adjusting applied Voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1375-1382
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• 2008

Frequency adjustable D-CRLH(dual-composite right/left handed) transmission lines, which solve the problem of design complexity and uncontrolled frequency of the existing structures, are proposed in this paper. The first design(type I), consisting of defected ground structure(DGS), island pattern in DGS, fixed stub and varactor diodes, controls $C_L$ in the parallel resonant circuit, while the second structure(type 2) composed of fixed DGS, shunt stub and diode adjusts $C_R$ in the series resonant circuit. The dual band frequency points which correspond to the meaningful electrical length of +/-90 degree in the RH/LH region are adjustable according to the bias voltage. The measurement shows that the LH frequency point which has -90 degree of electrical length are adjusted over $4.22{\sim}5.39\;GHz$ and $4.21{\sim}5.05\;GHz$ for type 1 and type 2, respectively, under $1{\sim}12\;V$ of bias voltage. In addition, the frequency Woo where RH turns over LH is controled over $3.26{\sim}4.22\;GHz$ for type 2 with the same bias condition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

• Journal of Environmental Health Sciences
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• v.42 no.1
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• pp.53-60
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• 2016

Objectives: Preservatives are commonly used in pharmaceuticals, cosmetics and other products to extend the expiration date and prevent the growth of microorganisms. Preservatives are generally effective in controlling mold and inhibiting yeast growth, and against a wide range of bacterial attacks as well. They also adversely affect the quality of sperm and cause precocious puberty in children. This study was performed to analyze seven preservatives used in pharmaceuticals and personal care products. Methods: Five kinds of pharmaceuticals and personal care products (PPCPs) were examined for analysis with a high performance liquid chromatography-diode array detector. Each sample was homogenized and the targeted compounds were extracted with methanol. The suspended particulate was removed by syringe filter. Next, the sample was injected into an HPLC system. The separation of the seven preservatives was achieved with a C18 column and gradient mode. The accuracies were between 73% and 120% and precision was lower than 11.58% (RSD). Results: All of the calibration curves showed good linearity with a coefficient of determination ($r^2$) over 0.999. Among the PPCP samples, the detection rate of preservatives was 32.5% for pharmaceuticals, 44.8% for toothpaste, 76.9% for mouthwash, 40.0% for body lotion and 56.0% for wet tissues. The average concentrations of the preservatives in PPCPs were BA 1141.0 mg/kg, MP 709.8 mg/kg, EP 624.9 mg/kg, PP 216.9 mg/kg, BP 167.8 mg/kg, and TCS 538.2 mg/kg. The most frequently detected preservatives in pharmaceuticals and personal care products were BA, MP and PP. The concentrations of preservatives exceeded Korean regulatory standards in 11 samples of medicines, three of mouthwash and two of body lotion. Conclusion: We found that most of the PPCP samples contained various preservatives. It is necessary to identify which preservatives were used and to determine the level of preservatives in PPCPs and to assess the health risk to susceptible populations such as children.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.