Optimization of 4H-SiC Vertical MOSFET by Current Spreading Layer and Doping Level of Epilayer (Current Spreading Layer와 에피 영역 도핑 농도에 따른 4H-SiC Vertical MOSFET 항복 전압 최적화)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.23 no.10
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- pp.767-770
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- 2010