• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.324-330
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• 2022

We measured the Dill and Mack model parameters that determine the exposure and development characteristics of photoresists, respectively. First, photoresist samples were prepared while altering the exposure dose, and changes in transmittance were measured. Analyzing these results, the Dill model parameters A, B, and C were determined. In particular, the exact solution of the Dill model equation was used to determine the C parameter. In addition, changes in thickness were measured as a function of development time for different exposure doses, and the Mack model parameters R_min, R_max, a, and n were determined using the results. We also determined parameter values for the reduced Mack model that uses only three parameters, R_min, R_max, and n. The root mean square error between the model predictions and the measured values for the photoresist thickness was found to increase slightly compared to the case using the original Mack model with four parameters.