• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.146-151
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• 2018

In this study, we compared the threshold-voltage extraction methods of accumulation-type JLDG (junctionless double-gate) MOSFETs (metal-oxide semiconductor field-effect transistors). Threshold voltage is the most basic element of transistor design; therefore, accurate threshold-voltage extraction is the most important factor in integrated-circuit design. For this purpose, analytical potential distributions were obtained and diffusion-drift current equations for these potential distributions were used. There are the ${\phi}_{min}$ method, based on the physical concept; the linear extrapolation method; and the second and third derivative method from the $I_d-V_g$ relation. We observed that the threshold-voltages extracted using the maximum value of TD (third derivatives) and the ${\phi}_{min}$ method were the most reasonable in JLDG MOSFETs. In the case of 20 nm channel length or more, similar results were obtained for other methods, except for the linear extrapolation method. However, when the channel length is below 20 nm, only the ${\phi}_{min}$ method and the TD method reflected the short-channel effect.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.958-964
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• 2001

It is difficult to apply a conventional selection guide for diffusers when the diffuser is installed in a perimeter zone, because the ADPI(Air Diffusion Performance Index) vs. T/L(Throw/Length) curve listed in conventional guide does not consider the perimetric heating load. The objective of this study is to evaluate the effect of the perimetric heating load on the ADPI and to propose a selection guide for proper diffuser when perimetric heating load exists. The velocity and temperature distributions and the ADPI value are obtained numerically with various heat load ratios and air flow rates. The ADPI values by numerical result were compared with existing experimental data to verify the method for evaluation of ADPI proposed in present study. In case of a high side wall diffuser, the ADPI decreased with increases of the flow rate on every heat load ratio of present study except 0.75. Also, the ADPI vs. T/L curves have been proposed for the heat load ratios of 0.25, 0.5, 0.75 to guarantee comport thermal environment when diffusers are installed in perimeter zone.

• 한국해양공학회지
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• 제32권3호
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• pp.166-176
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• 2018

This paper presents a numerical sensitivity analysis for the simulation of the motion performance of an offshore structure in waves using computational fluid dynamics (CFD). Starting with 2D wave simulations with varying numerical parameters such as grid spacing and CFL value, proper numerical conditions were found for accurate wave propagation that avoids numerical diffusion problems. These results were mapped on 2D error distributions of wave amplitude and wave length against the numbers of grids per wave length and per wave height under a given CFL condition. Finally, the 2D numerical sensitivity result was validated through CFD simulation of the motion of a FPSO in waves showing good accuracy in motion RAOs compared with existing potential flow solutions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.319-319
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• 2012

현재 폭넓게 이용되고 있는 STI (Shallow Trench Isolation) 공정에서 active edge 부분에 발생하는 기생 transistor의 subthreshold hump 특성을 제어하는 연구가 활발히 이루어지고 있다. 일반적으로 STI 공정을 이용하는 MOSFET에서 active edge 부분의 얇게 형성된 gate oxide, sharp한 active edge 형성, STI gap-fill 공정 중에 생기는 channel dopant out-diffusion은 subthreshold hump 특성의 주된 요인이다. 이와 같은 문제점을 해결하기 위해 active edge rounding process와 channel dopant compensation의 implantation을 이용하여 subthresold hump 특성 개선을 연구하였다. 본 연구는 STI 공정에 필요한 wafer와 phosphorus를 함유한 wafer를 한 chamber 안에서 auto-doping하는 방법을 이용하여 subthresold hump 특성을 구현하였다. phosphorus를 함유한 wafer에서 빠져나온 phosphorus가 STI 공정중인 wafer로 침투하여, active edge 부분의 channel dopant인 boron 농도를 상대적으로 낮춰 active edge 부분의 가 감소하고 leakage current를 증가시킨다. transistor의 channel length, gate width이고, wafer#No가 클수록 phosphorous를 함유한 wafer까지의 거리는 가까워진다. wafer #01은 hump 특성이 없고, wafer#20은 에서 심한 subthreshold hump 특성을 보였다. channel length 고정, gate width를 ~으로 가변하여 width에 따른 영향을 실험하였다. active 부분에 대한 SCM image로 확인된 phosphorus에 의한 active edge 부분의 boron 농도 감소와 gate width vs curve에서 확인된 phosphorus에 의한 감소가 narrow width로 갈수록 커짐을 확인하였다.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.162-172
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• 2008

We studied the effect of an Al underlayer on the growth of carbon nanotubes (CNTs) and their field emission characteristics, First of all, CNTs were grown on the Invar catalyst layers with different thickness of 1 to 10 nm, showing that the CNT length was saturated for the catalyst 5 nm or thicker. The CNTs grown on the 5-nm-thick catalyst were ${\sim}10{\mu}m$ long and ${\sim}30nm$ in diameter. Second, an Al underlayer was applied between the catalyst layer and the Ti diffusion barrier to reduce the diameters of CNTs for better field emission properties by forming spherical Al oxide particles on which smaller catalyst nanoparticles would occur. The optimal thickness of an Al underlayer underneath the 5-nm-thick catalyst was ${\sim}15nm$, producing the CNTs with the length of ${\sim}15{\mu}m$ and the diameter of ${\sim}15nm$. The field emission measurements, following the tape activation, showed that the thinner and longer CNTs gave rise to better field emission performance with the lower turn-on and threshold electric fields.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• International journal of advanced smart convergence
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• 제7권4호
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• pp.84-91
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• 2018

In this paper, we simulated three different HV systems and analyzed of each vacuum characteristics by VacCAD modelling. In each of modelled vacuum systems, selection of chamber materials, combination of rough pump with high vacuum pump and conductance of roughing line (diameter and length) were proposed as system variables. In the modelling of chamber materials, the pumping times to ultimate pressures of different chamber materials (stainless steel, aluminum) were compared by the variations of chamber volume. In this model, the effects of outgassing dependent on the chamber materials was also simulated and aluminum was estimated to optimum chamber materials. It was also obtained that modelling of vane and roots pump with diffusion pump and diameter, length of $50{\times}250$ [mm]roughing line were characterized as optimum variables to reach the ultimate pressure of 10E-7 [mbar] most effectively. Optimum design factors for vacuum characteristics of modelled vacuum system were achieved by VacCAD simulations. Feasibility of VacCAD as vacuum simulator was verified and applications of VacCAD expected to be increased to fields in vacuum needed.

• 한국산업보건학회지
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• 제11권1호
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• pp.34-41
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• 2001

Passive samplers have been used for personal, indoor, and outdoor air monitoring of VOCs at ppb concentrations in community and office environments. The path length of modified passive sampler was shortened, so it was intended to increase an uptake rate. The performance of the modified 3M 3500 organic vapor monitor(OVM) as a tool for assessing exposures to toxic air pollutants in nonoccupational community environments was evaluated using combined controlled test atmospheres of six selected target volatile organic compounds(VOCs): benzene, methyl tert-butyl ether(MTBE), chloroform, 1,4-dichlorobenzene, tetrachloroethylene, and toluene. The experiments were conducted by exposing the dosimeters to concentrations of $50{\sim}100{\mu}g/m^3$ on six face velocity(0.00, 0.02, 0.06, 0.12, 0.20, 0.30 m/sec) for 24 hours. If the uptake rate was increased, that means that we could use the passive sampler more effectively. The uptake rates were increased linearly according to reduce the path length. Although the diffusion path length was shortened, the change of uptake rate was within ${\pm}25%$ of theoretical value, indicating that the modified passive sampler(TM) can be effectively used over the range of concentrations and environmental conditions tested with a 24-h sampling period if the face velocities were over 0.12 m/s for 6 components of VOCs. But when the face velocities were less than 0.12 m/s, uptake rates were reduced more than expected values. So, the passive sampler with the shortened path length should be used at indoor or outdoor environment where the face velocity should be over about 0.10 m/s. If the path length was shortened more, the uptake rate was more effected by starvation.

• 한국표면공학회지
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• 제46권4호
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Bulletin of the Korean Chemical Society
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• 제22권5호
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• pp.467-475
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• 2001

A triblock copolymer based on $poly(\varepsilon-caprolactone)$ (PCL) as the hydrophobic part and poly(ethylene glycol) (PEG) as the hydrophilic portion was synthesized by a ring-opening mechanism of ${\varepsilon}-caprolactone$ with PEG containing a hydroxyl group at bot h ends as an initiator. The synthesized block copolymers of PCL/PEG/PCL (CEC) were confirmed and characterized using various analysis equipment such as 1H NMR, DSC, FT-IR, and WAXD. Core-shell type nanoparticles of CEC triblock copolymers were prepared using a dialysis technique to estimate their potential as a colloidal drug carrier using a hydrophobic drug. From the results of particle size analysis and transmission electron microscopy, the particle size of CEC core-shell type nanoparticles was determined to be about 20-60 nm with a spherical shape. Since CEC block copolymer nanoparticles have a core-shell type micellar structure and small particle size similar to polymeric micelles, CEC block copolymer can self-associate at certain concentrations and the critical association concentration (CAC) was able to be determined by fluorescence probe techniques. The CAC values of the CEC block copolymers were dependent on the PCL block length. In addition, drug loading contents were dependent on the PCL block length: the larger the PCL block length, the higher the drug loading content. Drug release from CEC core-shell type nanoparticles showed an initial burst release for the first 12 hrs followed by pseudo-zero order release kinetics for 2 or 3 days. CEC-2 block copolymer core-shell type nanoparticles were degraded very slowly, suggesting that the drug release kinetics were governed by a diffusion mechanism rather than a degradation mechanism irrelevant to the CEC block copolymer composition.