• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.94-94
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• 2008

We have performed simulation for Junction Field Effect Transistor(JFET) using Silvco to improve its electrical properties. The device structure and process conditions of Si-control JFET(Si-JFET) were determined to set its cut off voltage and drain current(at Vg=0V) to -0.5V and $300{\mu}A$, respectively. From electrical property obtained at various implantation energy, dose, and drive-in conditions of p-gate doping, we found that the drive in time of p-type gate was the most determinant factor due to severe diffusion. Therefore we newly designed SiGe-JFET, in which SiGe layer is to epitaxial layers placed above and underneath of the Si-channel. The presence of SiGe layer lessen the p-type dopants (Boron) into the n-type Si channel the phenomenon would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer will be discussed in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• 한국결정성장학회지
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• 제29권6호
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• pp.365-371
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• 2019

본 연구에서 SiO₂ 증착용 확산 화염 버너의 연료와 산소의 비율 변화에 따른 화염의 온도 분포를 전산 유체 해석을 수행하였다. 이는 친환경 원료물질을 이용한 광섬유 제조용 SiO₂ 프리폼 증착 공정을 시뮬레이션하기 위한 전단계에 해당한다. 예혼합 연소를 모델링하기 위해서 열 유동, 대류 및 화학 반응을 고려하였고 Reynolds-averaged Navier-Stokes 방정식과 k-ω 모델을 사용하였으며, 실제 화염의 온도 분포와 형상을 비교하여 연소 모델링의 적절성을 확인하였다. 결과적으로 화염의 온도 분포는 보조 산소의 유량이 증가하면 노즐 표면으로부터 최고 온도까지의 거리가 증가하는 경향성을 보였다. 또한 혼합 가스의 당량비가 큰 연소 반응에서 불완전 연소로 인한 온도 분포의 폭이 크게 나타나는 것을 확인하였다.

• 한국안전학회지
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• 제33권1호
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• pp.22-27
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• 2018

Many electronic devices are powered by various rechargeable batteries such as lithium-ion recently, and occasionally the batteries undergo thermal runaway and cause fire, explosion, and other hazards. If a battery fire should occur in an electronic device of vehicle and aircraft cabin, it is important to quickly extinguish the fire and cool the batteries to minimize safety risks. Attempts to minimize these risks have been carried out by many researchers but the results have been still unsatisfied. Because most rechargeable batteries are operated on the ion state during charge and discharge of electricity and the combustion of ion state has big difference with normal combustion. Here we focused on the effect of ions including an electron during combustion process. The effects of an ionized fuel on the flame stability and the combustion products were experimentally investigated in the propane jet diffusion flames. The burner used in this experiment consisted of 7.5 mm diameter tube for fuel and the propane was ionized with th ionizer (SUNJE, SPN-11). The results show that toe overall flame stability and shape such as flame length has no significant difference even in the higher ion concentration. However the fuel ionization affects to the pollutant emissions such as NOx and soot. NOx and CO emissions measured in post flame region decreased by fuel ionization, especially high fuel velocity, i.e. high ion density. TGA analysis and morphology of soot by TEM indicates that the fuel ionization makes soot to be matured.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• 디지털융복합연구
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• 제10권7호
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• pp.141-152
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• 2012

극장이나 대형 빌딩에서 현재 사용되고 있는 대표적인 화재감지기 기반의 피난 유도시스템은 대체적으로 아날로그 방식으로 운영되어 화재 발생 시 선로와 센서의 손실로 주 장치로 제대로 전달되지 않아서 정확한 발화위치 및 화재 진행위치를 알 수가 없다. 따라서 본 논문에서는 재난이 발생하였을 때 실시간으로 화재경보 사이렌과 상황에 맞는 최적의 피난유도 기능을 갖는 재난관리 안내방송 시스템을 제안하였다. 제안된 시스템의 유효성을 확인하기 위해 객체지향 기법으로 설계하여 재난안내시스템과 시뮬레이션프로그램을 구현하였다. 이 시스템은 실제 화재와 같은 비상상황이 발생할 경우 화재센서 네트워크를 통해서 건물 내의 LCD에 피난유도를 위한 정보(발생지점, 발생시간, 대피경로)를 출력하는 시뮬레이션프로그램과 연동하도록 구현하였다. 또한 이 시스템을 이용하여 화염연기 확산경로를 고려한 최적의 재난대피경로를 찾는 실험을 하였고 그 결과 제안한 시스템의 유효성을 확인할 수 있었다.

• International Journal of Computer Science & Network Security
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• 제22권7호
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• pp.332-346
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• 2022

Digital transformation represents one of the main obstacles facing several government, private, and non-profit sectors that help stabilize digital transformation in the Arabic region. One of the helpful ways to improve the level of freedom, productivity, and flexibility among employees to accept the BYOD approach is using their own devices to perform their work both in and outside the workplace. This study focuses to present the differences between the main three economic sectors, which represent the most important pillars of the economy in Saudi Arabia within the Kingdom's Vision 2030. BYOD also has great importance to the stakeholders for raising their awareness by expressing the implications, if the concept of BYOD is widely and correctly adopted. The study uses the diffusion of innovation (DOI) framework and quantitative analysis data to determine the main dimensions and important factors that help increase the awareness of the target audience. The number of participants in this study was 830, and the participants are mixing between the government, private, and non-profit sectors. The main findings showed a significant impact of several factors such as the importance of knowledge, ease of use, employee satisfaction, risk awareness, and attention to increase the level of acceptance in three main sectors study for using the BYOD approach widespread and professional use.

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• 대한전자공학회논문지SD
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• 제38권11호
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• pp.771-780
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• 2001

ULSI급 CMOS 소자를 개발, 제작하고 또한 그것의 전기적 특성을 정확히 분석하기 위해서는 공정 및 소자 시뮬레이터의 사용이 필수적이다. 대면적 몬테 카를로 시뮬레이션 결과가 다차원 소자 시뮬레이터의 입력으로 사용되려면 과도한 입자수의 증가로 비효율성을 띄게 된다. 본 논문에서는 이러한 문제를 해결하기 위해 3차원 몬테 카를로 이온 주입 시뮬레이터인 TRICSI 코드를 이용하여 물리적으로 타당하며 또한 효율적으로 시뮬레이션 입자 수를 증가시켜 대면적 이온 주입시의 3차원 통계 분포의 잡음 영역을 최소화하는 방법을 제안하였다. 후속 공정인 열확산 공정이나 RTA(급속 열처리) 공정의 확산 방정식을 푸는 경우 발산을 막기 위해 몬테 카를로 시뮬레이션 결과의 통계 분포에 대한 후처리 과정으로 3차원 셀을 이용한 보간 알고리듬을 적용하였다. 시뮬레이션 수행 결과 가상 궤적 발생법(split-trajectory method)만을 사용한 것에 비해 계산 시간은 2배로 늘이지 않는 범위에서 10배 이상의 이온 입자 생성 분포를 얻을 수 있다.

• 디지털콘텐츠학회 논문지
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• 제11권3호
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• pp.315-322
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• 2010

본 논문은 스마트폰의 확산으로 인해서 변해가는 모바일 트랜드를 진단해보고자 한다. 디지털 기술을 기반으로 한 모바일 기술은 최근 폭발적으로 성장하고 있다. 모바일 기술은 단지 이동성에 그치지 않고 스마트함을 겸비해서 명실공히 스마트 노매드의 시대로 진화하고 있는 것이다. 스마트 노매드 시대를 이끌고 있는 것은 단연 스마트폰이다. 2010년 전세계 스마트폰 판매는 약 2.5억대 이상으로 전체 휴대폰 중 20%를 차지하고, 향후 그 비중은 더욱 커질 것으로 전망된다. 이렇듯 폭발적인 스마트폰의 확산은 다양한 동인이 서로 상호작용을 하며 이끌어가고 있다. 스마트폰 관련 업계 및 연구소의 각종 자료 및 전문가들의 인터뷰 내용을 종합한 본 결과 스마트폰의 확산은 대체로 네 가지 동인에 기인한 것으로 보인다. 첫째, 모바일 단말 기술의 발전, 둘째, 모바일 콘텐츠와 유통망의 획기적인 변화, 셋째, 제도적 뒷받침, 넷째, 일본의 도코모 아이모드와 애플 아이폰의 혁신적인 성공을 들 수 있다. 이번 스마트폰 열풍은 단순히 열풍으로 끝나지 않을 것으로 전망된다. 전세계적으로 관련 업계의 경쟁구도는 더욱 뜨거워질 것이며, 국내에서의 경쟁 또한 치열할 것으로 보인다. 이러한 국면에 대비하기 위해서는 취약한 소프트웨어 및 콘텐츠 역량을 확충하고 폭넓은 파트너십을 구축하는 동시에 차세대 기술 및 서비스 혁신을 통해 전세계적인 경쟁의 판도를 리드해나가야 할 것이다.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.