• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.91-97
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• 1998

In a LiNbO$_{3}$ crystal, optical noise is caused by the inhomogeneity of crystal inside if the excess energy is incident on the crystal. In this paper, we experiemnt the influence of optical noise when it is applied for beam diffraction and optical information storage. And it is proposed the energy threshold level which is not affected by optical noise in Fe-LiNbO$_{3}$ crystal(0.02Wt.% doped, 10mm*10mm*10mm). The optical noise of crystal weremeasured as a function of the incident beam intensity(10mw, 5mw, 1mw, 0.5mw), direction in incident(orthogonal, left rotation, right rotation) and wavelength(514.5nm, 632.8nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.600-607
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• 1994

Optimum exper~mental conditions were established for the growth of heteroepitaxial GaAs layers on InP using liquid phase epitaxy (LPE) technique. Results showed that the optimum growth temperature was $720^{\circ}C$ at a cooling rate of $0.5^{\circ}C$/min. Surface morphology of the grown layers significantly improved by addition of about 0.005wt% Se to the Ga growth melt, which effectively suppressed melt-back of InP substrates into the melt during the initial stage of growth. It was observed that the quality of GaAs layers also improved substantially when the substrates patterned with grating structure were used, as determined by the (400) double crystal X-ray diffraction. The transmission electron microscopy observation indicated t.hat the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.53.2-53.2
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• 2015

Fiber Bragg gratings (FBGs) are the most compact and reliable method of suppressing atmospheric emission lines in the infrared for ground-based telescopes. It has been proved that real FBGs based filters were able to eliminate 63 bright sky lines with minimal interline losses in 2011 (GNOSIS). Inscribing FBGs on multi-core fibers offers advantages. Compared to arrays of individual SMFs, the multi-core fiber Bragg grating (MCFBG) is greatly reduced in size, resistant to damage, simple to fabricate, and easy to taper into a photonics lantern (PRAXIS). Multi-mode fibers should be used and the number of modes has to be large enough to capture a sufficient amount of light from the telescope. However, the fiber Bragg gratings can only be inscribed in the single-mode fiber. A photonic lantern bi-directionally converts multi-mode to single-mode. The number of cores in MCFBGs corresponds to the mode. For a writing system consisting of a single ultra-violet (UV) laser and phase mask, the standard writing method is insufficient to produce uniform MCFBGs due to the spatial variations of the field at each core within the fiber. Most significant technical challenges are consequences of the side-on illumination of the fiber. Firstly, the fiber cladding acts as a cylindrical lens, narrowing the incident beam as it passes through the air-cladding interface. Consequently, cores receive reduced or zero illumination, while the focusing induces variations in the power at those that are exposed. The second effect is the shadowing of the furthest cores by the cores nearest to the light source. Due to a higher refractive index of cores than the cladding, diffraction occurs at each core-cladding interface as well as cores absorb the light. As a result, any core that is located directly behind another in the beam path is underexposed or exposed to a distorted interference pattern from what phase mask originally generates. Technologies are discussed to overcome the problems and recent experimental results are presented as well as simulation results.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.424-429
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• 1999

The amplifier properties of single distributed feedback dye laser with 106 ps pulse width and 616 nm wavelength were invested using only one XeCl-excimer laser as pump source. For optimized amplification of DFDL, the three-stage amplifiers were arranged with increasing cross-section and accordingly increasing pump energies. The first AmpI, II stages were dye cell of 5 mm, 10 mm and contained a $6{\times}10^{-4}$ [mol/l](solvent : Methanol) of Rhodamine 610. Double-pass amplification in the AmPII was measured to suppress the ASE by using a diffraction grating. The beam intensity of AmpI, II was saturated with a gain of respectively 10 and 48. The last AmpIII was Bethune cell of 30 mm and contained a $3{\times}10^ {-4}$ [mol/l] (solvent : Ethanol) of Rhodamine 610. In the single-pass and double-pass amplification, the output energy was obtained 168.2 $\mu$J and 471$\mu$J respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.1
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• pp.225-230
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• 2017

In this paper, a highly efficient GMR(guided-mode resonant) color filter is proposed and implemented. The GMR color filter consists of $Si_3N_4/air$ layers containing complementary fixed and mobile gratings. The device is designed using RETT(rigorous equivalent transmission-line theory) and a grating structure operating in subwavelength. The numerical result reveals that the color filter has a tuning capability of about 35 nm over the $0.45{\mu}m{\sim}0.55{\mu}m$ range for blue-green color and across $0.6{\mu}m{\sim}0.7{\mu}m$ range for red color. Furthermore, The color filters have a spectral bandwidth of about 8 nm with efficiencies of 99%, 98%, and 99% at the center wavelength of blue, green, and red color, respectively, and these are higher efficiencies than reported in the literature previously.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.43-52
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• 1999

We propose a new method for tuning of center wavelength in photorefractive filter using $LiNbO_3$ crystal doped with 0.015Wt.% Fe. through the filter bandwidth property analysis using the geometrical method, a new wavelength selectivity theory was presented. In this scheme, the tuning of the center wavelength can be achieved by the real time incident angle control of the received heam, which was gotten by the spatial light modulator. So, tuning time depend on the response time of the SLM and results in the high speed turing. Because the use of thermally fixed grating in our filter, it has uniform diffraction property to the all filtering wavelength. Designed tunable filter has 4nm bandwidth and composed of the three channel with 10nm space. From the optical experiment, we get the 4.5nm, 4.25nm, 4nm bandwidth and 1530.5nm, 1540.5nm, 1549.5nm center wavelength respectively.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.4 s.193
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• pp.115-122
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• 2007

Recently, remarkable progress has been made in both technology and production of optical elements including aspheric lens. Especially, requirements for machining glass materials have been increasing in terms of limitation on using environment, flexibility of material selection and surface accuracy. In the past, precision optical glass lenses were produced through multiple processes such as grinding and polishing, but mass production of aspheric lenses requiring high accuracy and having complex profile was rather difficult. In such a background, the high-precision optical GMP process was developed with an eye to mass production of precision optical glass parts by molding press. This GMP process can produce with precision and good repeatability special form lenses such as camera, video camera, aspheric lens for laser pickup, $f-\theta$ lens for laser printer and prism, and me glass parts including diffraction grating and V-grooved base. GMP process consist a succession of heating, forming, and cooling stage. In this study, as a fundamental study to develop molds for GMP used in fabrication of glass lens, we conducted a glass lens forming simulation. In prior to, to determine flow characteristics and coefficient of friction, a compression test and a compression farming simulation for PBK40, which is a material of glass lens, were conducted. Finally, using flow stress functions and coefficient of friction, a glass lens forming simulation was conducted.