• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.205-206
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• 2006

(BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.402-405
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.79-82
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.304-310
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• 2003

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-Bel method, were mixed with organic binder and then BSCT thick films were fabricated by the screen printing techniques on alumina substrates using the BSCT paste. The structural and the dielectric Properties were investigated for various composition ratio and sintering temperature. The second phase appeared in BSCT(40/40/20) thick film sintered at 1450$^{\circ}C$. BSCT thick film thickness, obtained by four printings, was approximately 110∼120$\mu\textrm{m}$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at 1420$^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5㎸/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.402-405
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• 2001

(Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.338-341
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• 2002

$(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.