• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.2
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• pp.345-354
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• 2024

In this paper, we propose a triple band WLAN antenna for Wi-Fi 6E band with DGS. The proposed antenna has the characteristics required frequency band and bandwidth by considering the interconnection of two strip lines and three areas on the ground place. The total substrate size is 31 mm (W) × 50 mm (L), thickness (h) 1.6 mm, and the dielectric constant is 4.4, which is made of 22 mm (W₆ + W₄ + W₅) × 43mm (L₁ + L₂ + L₃ + L₅) antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 340 MHz (1.465 to 1.805 GHz) for 900 MHz band, 480 MHz (2.155 to 2.635 GHz) for 2.4 GHz band and 1950 MHz (4.975 to 6.925 GHz) for 5.0/6.0 GHz band were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency triple band as required.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.