• Applied Science and Convergence Technology
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• 제25권4호
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1283-1285
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• 2008

We describe how the phenomenon of dielectric dispersion in nematic liquid crystals influences the director dynamics and thus the switching speed of nematic-based displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.150-153
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• 1996

Polyvinylidene fluoride(PVDF) thin films are fabricated by vapor deposition method and their dielectric characteristics are investigated. At electric field near 4MV/m, a phase transition occur with polar ${\alpha}$ . In accordance to increasing temperature, the dielectric relaxation of PVOF thin films show from 70Hz to 104Hz. This result correspond to Debye's theory[1]. Activation energy of PVDP thin film is 21Kca1/mo1.

• 한국재료학회지
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• 제29권8호
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• pp.469-476
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• 2019

A lead-free bulk ceramic having a chemical formula $Ba_{0.8}Ca_{0.2}(Ti_{0.8}Zr_{0.1}Ce_{0.1})O_3$ (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• Macromolecular Research
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• 제15권5호
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• pp.396-402
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• 2007

The dielectric properties and various pattern-forming states of dual-frequency material in a nematic phase, as well as its mixture containing low concentrations of reactive monomers, are reported. The dielectric relaxation behaviors of nematic MLC 2048 are presented and compared to its mixture containing both mesogenic and nonmesogenic reactive monomers. The sign-inversion frequency of the dielectric anisotropy was significantly shifted on the addition of small amounts of the reactive monomers. However, all three mixtures used in this study essentially exhibited the same field-induced instabilities at different frequencies and voltage domains of the applied electric field. A broad band of modulated states were found to exist above a critical voltage and within a voltage dependent frequency band in the vicinity of the sign-inversion frequency, $f_I$, of the dielectric anisotropy. As the $f_I$ of the mixtures shifted, so did the bands of the modulated state of the different mixtures and the temperatures, which were well matched with the measured $f_I$ value.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.385-390
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• 1999

Surface corona discharge characteristics of a dc corona charged ferroelectric pellet barrier have been investigated experimentally. Electric charges stored on the surfaces of the ferroelectric pellets by a dc corona discharge provide partial electric fields on the surfaces of the ferroelectric pellets, which could generate surface corona discharges on the ferroelectric pellets. This system utilizes both the surface discharges on the ferroelectric pellet barrier and the corona discharge between corona tip and mesh electrode. Positive and negative dc voltages were applied to the tip to generate partial discharges, and corona currents were estimated to investigate the buildup charge on ferroelectric pellets as a function of the applied time and the charge relaxation time constants of ferroelectric pellets. As a result, in the case of the negative corona discharge with the ferroelectric pellet barrier, the mean corona current and ozone generation increase greatly, and the surface discharges on the ferroelectric pellets can be fenerated efficiently. It is also found that, charge relaxation time, dielectric constants offerroelectric pellets, polarity of applied voltage and applied time affected to the surface discharges among the ferroelectric pellets.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2005년도 ISMP
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1102-1104
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• 1995

This study presents the results of an investigation on the electrical characteristics of $PVF_2$ film, to be regarded as the excellent piezo and pyroelectricity, using dielectric relaxation technique by the variation of temperature and frequency. As one of the results, we confirmed that crystal form with Infrared absorption and XRD was ${\alpha}$ type and its crystalline was 59[%]. Also, the results of observation conformed to Debye theory for frequency variation of relative permitivity and dielectric relaxation. Especially, we confirmed each constant values in comparision with equation related to diffusion behavior of ion, so we obtained that activation energy was computed 17.25[kcal/mole] from the relation curve with frequency and temperature.

• 전기학회논문지
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• 제56권10호
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.