• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.490-494
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• 2020

Sulphur hexafluoride (SF₆) is mostly used as a current-insulating medium in gas-insulated switchgears (GIS), owing to its excellent dielectric strength and arc-extinguishing performance. The global warming potential (GWP) of SF₆, however, is 23,900 times that of CO₂, and its life time in the atmosphere is 3,200 years. For these reasons, new eco-friendly gases to replace SF₆ are required. In this study, the partial discharge (PD) characteristics of green gas for grid (g³) and dry air (N₂/O₂) were analyzed to compare with those of SF₆. A PD electrode system was designed to simulate the protrusion defect in GISs and fabricated for experimentation. To compare the PD characteristics of each gas, the discharge inception voltage (DIV), discharge extinction voltage (DEV), discharge magnitude, discharge pulse number, and phase pattern were analyzed. Results from this study are expected to provide fundamental materials for the design of eco-friendly GISs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• 한국정보통신학회논문지
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• 제11권12호
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• pp.2210-2216
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• 2007

본 논문은 휴대 단말기에 적용할 수 있는 삼중대역(Triple-band) 프라스틱 칩 안테나에 관하여 연구하였다. 프라스틱 칩은 PVC(Polyvilyl chloride)계열의 Foamex 매질을 사용하였으며, 전기적인 특성은 유전율이 1.9이고, 절연밀도는 112KV/cm이다. 프라스틱 칩 안테나는 세라믹 칩 안테나보다 잘 파손되지 않고, 이득과 효율이 좋은 장점을 가지고 있다. 본 논문에서는 4종류의 삼중대역 프라스틱 칩 안테나를 제작하고 실험하였다. 실험 결과 삼중대역에서 공진하였고, 안테나 이득은-2dB이상이고, 안테나 패턴은 일반적인 칩 안테나와 비슷한 전 방향 특성을 갖는다. 따라서 Foamex 매질을 이용하여 구현된 안테나는 삼중대역용 휴대폰과 다양한 무선통신시스템에 적용될 수 있다.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.117-123
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• 2018

Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.

• 한국항행학회논문지
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• 제23권2호
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• pp.172-178
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• 2019

본 논문에서는 LTCC 다층기판으로 구현할 수동 소자를 수축공정과 무수축공정으로 구분하여 설계, 제작하고 분석하였다. 유전율 7 또는40의 두 종류 세라믹 소재를 사용하여 기본 형태의 수동소자를 다양하게 두 가지 공정으로 제작하여 특성을 비교하였다. 유전율40 기판을 사용할 때 수축공정은 X, Y 방향에서 17%, Z 방향에서 36%의 수축율을 보이는 것과 비교하여, 무수축공정은 X,Y 방향에서 변화하지 않고 Z 방향으로만 43% 수축하여 평면상에서 높은 치수 정밀도와 표면 평탄도를 얻을 수 있다. 측정 값으로 부터 매개 변수를 이용한 경험적 해석 식을 이용하여 제작한 LTCC 소자의 인덕턴스 및 커패시턴스를 추정하였으며 설계 라이브러리 형태로 구현하였다. 유전율과 제작 공정에 따라 인덕터의 권선수와 단위 면적에 따른 커패시턴스를 측정하여 권선수 및 단위면적에 따른 소자값을 예측할 수 있는 다항식을 제시하였다.

• 한국융합학회논문지
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• 제12권2호
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• pp.29-34
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• 2021

본 논문에서는 중심에 동공을 갖는 원통형태 광결정 도파로가 제안되어지고, 이 전송로의 도파 특성에 대한 분석이 수행되어진다. 여기서 동공은 일반적인 공기이거나 임의의 액체나 고체 물질들에 의한 저지수 유전체로써 형성되게 된다. 베셀 함수를 이용한 분석적 방법으로 전자장에 대한 엄밀한 해를 구하기 위하여, 행렬 기법이 고유치 방정식의 유도에 사용되고, 실효 굴절률, 분산, 전자장 분포 등의 기본 모드의 중요한 전송 성질들이 조사된다. 또한 분석 결과 정확도의 검증을 위하여 엄밀한 완전 벡터 유한 차분법을 적용해보고, 광결정 도파로의 설계와 제조 상의 문제를 해결하는데 용이하게 활용하고자 한다. 설계된 중심-동공 광도파관의 실효 모드 면적이 2.6056 ㎛2에서 5.9673 ㎛2까지 동작 파장에 따라 다양하게 변하며, 일반적으로 광도파로의 중심으로부터 바깥쪽으로 원통형의 층수가 적을수록 그리고 굴절률 n1이 약간 큰 저지수일수록 실효 면적은 작아지므로, 비선형 소자 응용의 관점에서 훨씬 더 최적화된 결과를 나타낸다.

• 한국표면공학회지
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• 제54권1호
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• pp.30-36
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• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• Composites Research
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• 제22권3호
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• pp.44-54
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• 2009

본 논문에서는 퍼콜레이션 이론적 관점에 기초한 복소 유전율의 수치모델을 제시하고, 전기 전도성이 뛰어난 카본 블랙을 혼합한 유리섬유/에폭시 복합재료 적층판의 복소 유전율을 이용하여 이 깃을 검증하였다. 제시된 모델은 카본 블랙의 함유율이 퍼콜레이션 임계함유율 보다 높고, 주파수가 충분히 높아서 복합재료의 교류 전기전도도가 주파수에 비례하는 구간에서의 복소 유전율을 모사한다. 복합재료의 복소 유전율은 벡터회로망분석기와 7 mm 동축관을 이용하여 $0.5\;GHz\;{\sim}18\;GHz$ 대역에서 측정되었다. 제시된 모델은 퍼콜레이션 이론에서 유용하게 사용되는 축척(눈금잡이) 법칙의 함수형태와 실험을 통하여 구한 상수들로 구성되어 있으며, 복소 유전율을 주파수와 가본 블랙의 함유율의 함수로 나타내었다. 제시된 모델은 복소 유전율을 측정결과와의 비교를 통하여 검증되었다.