• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.477-481
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• 2011

Composites of insulating polyethylene and carbon black are widely used in switching elements, conductive paint, and other applications due to the large gap of resistance value. This research addresses the critical exponent of dielectric breakdown strength of polymer matrix composites (PMC) made with carbon black and polyethylene below the percolation threshold (Pt) for the first time. Here, Pt means the volume fraction of carbon black of which the resistance of the PMC is transferred from its sharp decrease to gradual decrease in accordance with the increase of carbon-black-filled content. First, the Pt is determined based on the critical exponents of resistivity and relative permittivity. Although huge cohesive bodies of carbon black are formed in case of being less than the Pt, a percolation path connecting the conducting phases is not formed. The dielectric breakdown strength (Dbs) of the PMC below Pt is measured by using an impulse voltage in the range from 10 kV to 40 kV to avoid the effect of joule heating. Although the observed Dbs data seems to be well fitted to a straight line with a slope of 0.9 on a double logarithm of (Pt-$V_{CB}$) and Dbs, the least squares method gives a slope of 0.97 for the PMC. It has been found that finite carbon-black clusters play an important role in dielectric breakdown.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.48-53
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• 2008

In order to reduce signal delay in ULSI, an intermetal material of low dielectric constant is required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. The ordered mesoporous silica film prepared by TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-76 surfactant was surface-modified by HMDS (hexamethyldisilazane) treatment to reduce its dielectric constant. HMDS can substitute $-Si(CH_3)_3$ groups for -OH groups on the surface of silica wall. In order to modify interior silica wall, HMDS was treated by two different processes except the conventional spin coating. One process is that film is dipped and stirred in HMDS/n-hexane solution, and the other process is that film is exposed to evaporated HMDS. Through the investigation with different HMDS treatment, it was concluded that surface modification in evaporated HMDS was more effective to modify interior silica wall of nano-sized pores.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.26.1-26.1
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.23.2-23.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.35.1-35.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.92.2-92.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.