• Title/Summary/Keyword: Dielectric materials

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Development of a New On-line fiber Orientation Sensor Based on Dielectric Anisotropy

  • Nagata, Shinichi
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.34 no.5
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    • pp.49-55
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    • 2002
  • A new method is proposed for the on-line measurement of the fiber orientation of sheet materials. The measurement of fiber orientation is very important in manufacturing paper sheets, non-woven fabrics, and glass sheets, because fiber orientation strongly affects product properties represented by, for example, dimensional stability of paper. A method developed in this research utilizes anisotropy of dielectric constants of sheet materials as a key characteristic to determine the fiber orientation. The new on-line sensor, consisting of 5 microwave dielectric resonators set in different directions, was designed to detect the fiber orientation while paper is running with high speed on a paper machine. This sensor can determine the direction and the degree of fiber orientation from the measured direction of the maximal dielectric constant and its variation, respectively. The fundamental performance of this system was examined by the static measurement of printing grade paper, which gave a satisfactory result. Then, the dynamic measurements were done at a speed of 1,000 m/min by using a high-speed test-coating machine.

A Study on the Low-Firing Dielectric Material (저온 소결 유전체에 관한 연구)

  • Lee, Jong-Kyu;Kim, Wang-Sup;Kim, Kyeong-Yong
    • Korean Journal of Materials Research
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    • v.2 no.4
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    • pp.263-269
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    • 1992
  • Low-firing dielectric materials with negative small temperature coefficients were investigated. The newly developed materials are based on Ti$O_2$(100-x)/ CuOx(X=1~5wt%) with small amount of Mn$O_2$ additive. The sample without CuO was not sintered at 90$0^{\circ}C$. As CuO content was increased the sample could be sintered at low temperature. However, the dielectric constant was decreased and the dielectric loss was increased. In the case of adding 3wt% CuO and 0.6wt% Mn$O_2$, the dielectric constant and the Q values appeared very high.

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Microwave Dielectric Properties of Bi2O3-TiO2 Composite Ceramics

  • Axelsson, Anna-karin;Sebastian, Maladil;McN Alford, Neil
    • Journal of the Korean Ceramic Society
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    • v.40 no.4
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    • pp.340-345
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    • 2003
  • B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

  • Park, Sangshik
    • Korean Journal of Materials Research
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    • v.24 no.4
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    • pp.207-213
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    • 2014
  • Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

Dielectric Properties of Ca0.8Sr1.2Nb3O10 Nanosheet Thin Film Deposited by the Electrophoretic Deposition Method

  • Yim, Haena;Yoo, So-Yeon;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.27 no.1
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    • pp.1-5
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    • 2018
  • Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

A Free-Space Method for Measurement and Analysis of Dielectric Characteristics of Electromagnetic Absorbing Materials at Microwave Frequencies (자유공간 기법을 적응한 마이크로파 대역 전파흡수재의 유전 특성 분석)

  • 배근식
    • Journal of the Korea Institute of Military Science and Technology
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    • v.6 no.2
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    • pp.73-82
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    • 2003
  • For measurements and analysis of dielectric characteristics of planar slabs of microwave absorbing materials, I have applied a free-space method in the frequency range of 8~14 GHz. The measurement system for free-space method consists of transmit and receive antennas, mode transitions, precision coaxal cables, the network analyzer, and a computer Special Spot-focused horn lens antenna was used to eliminate diffraction effects. Diffraction effects at the edges of the sample are minimized by satisfying the condition for minimum transverse dimension of the plate and the beamwidth of the antennas at the focus. The time-domain gating feature of the network analyzer and the thru, reflect, and line(TRL) calibration technique were used to eliminate the effects of undesirable multiple reflections. The complex coefficients of reflection and transmission, $S_{11}$ and $S_{21}$, of planar samples were measured for standard materials such as Teflon, Rexolite$\textregistered$ 2200. The results were compared with existing measurement method. And I applied a free-space method for measurement to measure dielectric constants of some electromagnetic absorbing materials. Dielectric properties for the same samples were also measured with a 7mm coxial transmission line method for purposes of comparison with the free-space method.

Reaction of α-Fe2O3 Red Pigment and Transparent Dielectric Materials (적색안료인 α-Fe2O3와 투명 유전체의 반응)

  • Kim, Bong-Chul;Han, Yong-Soo;Song, Yoon-Ho;Suh, Kyung-Soo;Lee, Jin-Ho;Lee, Nam-Yang;Park, Lee-Soon;Lee, Byung-Kyo
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.226-232
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    • 2002
  • We searched thermal stability of ${\alpha}-Fe_2O_3$ using red color filter for display. In the PDP(Plasma Display Panel), the color filter layer is lied normally between front glass and transparent dielectric materials, so it might be needed to study the reaction of ${\alpha}-Fe_2O_3$ and transparent dielectric materials. The transparent dielectric materials containing ZnO has good transparency. Red colorlayer of ${\alpha}-Fe_2O_3$ contacted with dielectric material layer containing ZnO is changed to colorlessness over 500$^{\circ}$C because ZnO defuse ${\alpha}-Fe_2O_3$, the dielectric materials without ZnO, however, maintain red color at the same condition. We suggest that a layer contacting with ${\alpha}-Fe_2O_3$ red color layer has to lie with transparent dielectric materials without ZnO, then the materials containing ZnO is coated over to get color of ${\alpha}-Fe_2O_3$ for red color filter

Excimer laser annealing of sol-gel derived PZT thin films

  • Do, Young-Ho;Kang, Min-Gyu;Oh, Seung-Min;Kang, Chong-Yun;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.20-20
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    • 2010
  • The effect of excimer laser annealing on the structural and dielectric behaviors of $PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$/Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number.

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Suppression of Shrinkage Mismatch in Hetero-Laminates Between Different Functional LTCC Materials

  • Seung Kyu Jeon;Zeehoon Park;Hyo-Soon Shin;Dong-Hun Yeo;Sahn Nahm
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.2
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    • pp.151-157
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    • 2023
  • Integrating dielectric materials into LTCC is a convenient method to increase the integration density in electronic circuits. To enable co-firing of the high-k and low-k dielectric LTCC materials in a multi-material hetero-laminate, the shrinkage characteristics of both materials should be similar. Moreover, thermal expansion mismatch between materials during co-firing should be minimized. The alternating stacking of an LTCC with silica filler and that with calcium-zirconate filler was observed to examine the use of the same glass in different LTCCs to minimize the difference in shrinkage and thermal expansion coefficient. For the LTCC of silica filler with a low dielectric constant and that of calcium zirconate filler with a high dielectric constant, the amount of shrinkage was examined through a thermomechanical analysis, and the predicted appropriate fraction of each filler was applied to green sheets by tape casting. The green sheets of different fillers were alternatingly laminated to the thickness of 500 ㎛. As a result of examining the junction, it was observed through SEM that a complete bonding was achieved by constrained sintering in the structure of 'calcium zirconate 50 vol%-silica 30 vol%-calcium zirconate 50 vol%'.

Transparent Capacitor of the $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMNO)-Bi Nanostructured Thin Films grown at Room Temperature

  • Song, Hyeon-A;Na, Sin-Hye;Jeong, Hyeon-Jun;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.2-20.2
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    • 2011
  • BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

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