• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.548-551
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• 2004

For the improvements in high transmittance, one of the most important factors of transparent dielectric is pore contents and pore size. This study have investigated the effect of frit size on the transmittance of zinc-boric system with a Pb-free composition. A mixed glass paste was used for thick films, which were made by screen printing methods on a glass substrate (PD200). These dielectric layers were measured for surface roughness, pores content and transmittance. The results show that increase of pore size and content have detrimental effects on the transmittance of films compared to those found in the PbO system.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.981-988
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• 1994

Crystallizable glasses with precipitation of celsian were prepared for the purpose of insulating dielectric layers for the devices such as integrated circuit substrates. Crystallization behavior of these glasses were studied by DTA, SEM, XRD analysis and by the measurement of dielectric properties. The base composition of the glass-ceramic consists in weight percent of 30% SiO2, 10% Al2O3, 26% BaO, 10% CaO, 10% ZnO, 8%TiO2 and 6% B2O3. 2-6 wt% Y2O3 were selected as the nucleating agent to promote monoclinic celsian formation. As a result, in barium-rich glasses containing 4~6wt% Y2O3 , monoclinic celsian was developed as major crystalline phase in the temperature range of 850~90$0^{\circ}C$. Also, the dielectric constant and quality factor of these glass-ceramics were about 9 and more than 1000, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.25-32
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• 1992

In this paper, a method for the calculation of 2-dimensional interconnection capacitance for a multi-interconnection signal line in a dielectric region is presented. The numbers of dielectric layers and signal lines are arbitrary. To calculate the capacitance parameter, Boundary Element Method is used, and the dielectric interface and the surface of lines are divided into subsections. The advantages of BEM are small CPU-time and more exact solution due to the directly calculated values of capacitance only at the boundary of domain.It is adopted that the surface capacitance of each subsection assumed constant. The solution of surface charge density and capacitance parameter are calculated in a given domain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1241-1244
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• 2003

The materials showing high structure dispersity are developed on the natural quartz base and they are obtained by mechano-chemical technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction (MCR) show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, contain a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds are synthesized having thickness up to $10{\sim}50nm$ and showing magnetic, electrical and other properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.343-348
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• 2007

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. Lipid thin films were deposited by accumulation and the current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• 연구논문집
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• s.25
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• pp.185-192
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• 1995

The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.440-440
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• 2012

The optical characteristics of transparent electrode with various kind of materials and thickness to be used for organic photovoltaic cells were studied by simulation methodology. It demonstrated that the transmittance varies with the kinds of materials, the number of layers and change in the thickness of each layer. In the case of the structure composed of dielectric/Ag/dielectric, optimized transmittance was higher than 90% at 550 nm and the thickness of the Ag layer was ~10nm. Top and bottom dielectric materials can be changed with different refractive index and extinction coefficient. The relation between the optical transmittance of device and transparent electrode with different refractive indices was discussed as well. By processing numerical simulations, an optimized optical transmittance can be obtained by tunning the thickness and materials of transparent electrode.

• Journal of Information Display
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• v.11 no.2
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• pp.52-56
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• 2010

High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.