• 제목/요약/키워드: Dielectric constant K

검색결과 1,775건 처리시간 0.029초

Trypsin 반응에 대한 용매의 유전상수 및 압력의 영향 (Effect of Pressure and Solvent Dielectric Constant on the Kinetic Constants of Trypsin-Catalyzed Reaction.)

  • 박현;지영민
    • 한국미생물·생명공학회지
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    • 제28권1호
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    • pp.26-32
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    • 2000
  • Electrostatic forces contribute to the high degree of enzyme transition state complementarity in enzyme catalyzed reaction and such forces are modified by the solvent through its dielectric constant and polar properties. The contributions of electrostatic interaction to the formation of ES complex and the stabilization of transition state of the trypsin catalyzed reaction were probed by kinetic studied with high pressure and solvent dielectric constant. A good correlation has been observed between the increase of catalytic efficiency of trypsin and the decrease of solvent dielectric constant. Activation volume linearly decreased as the dielectric constant of solvent decreased, which means the increase in the reaction rae. Moreover, the decrease of activation volume by lowering the solvent dielectric constant implies a solvent penetration of the active with and a reduction of electrostatic energy for the formation of dipole of the active site oxyanion hole. When the 야electric constant of the solvents was lowered to 4.7 unit, the loss of activation energy and that of free energy of activation were 2.262 KJ/mol and 3.169 KJ/mol, respectively. The results of this study indicate that the high pressure kinetics combined with solvent effects can provide unique information on enzyme reaction mechanisms, and the controlling the solvent dielectric constant can stabilize the transition state of the trypsin-catalyzed reaction.

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Highly flexible dielectric composite based on passivated single-wall carbon nanotubes (SWNTs)

  • Jeong, Hyeon-Taek;Kim, Yong-Ryeol
    • 한국응용과학기술학회지
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    • 제32권1호
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    • pp.40-47
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    • 2015
  • Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

Epoxy/BaTiO3 (SrTiO3) composite films and pastes for high dielectric constant and low tolerance embedded capacitors fabrication in organic substrates

  • Paik Kyung-Wook;Hyun Jin-Gul;Lee Sangyong;Jang Kyung-Woon
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2005년도 ISMP
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    • pp.201-212
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    • 2005
  • [ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

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수분함량과 측정주파수에 따른 사질토 지반의 유전상수 변화 (Variation of Dielectric Constant of Sand due to Water Content and Measuring Frequency)

  • 이주형;오명학;박준범;김형석
    • 한국지반공학회논문집
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    • 제18권6호
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    • pp.129-139
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    • 2002
  • 최근 지반 특성과 지반 오염도의 조사를 위해 유전상수 측정기법을 적용하기 위한 연구가 활발히 진행되고 있다. 본 연구에서는 다양한 함수비와 건조단위중량을 갖는 화강풍화토와 주문진표준사의 유전상수를 75kHz~12MHz의 주파수 범위에서 측정하였다. 사질토의 유전상수는 주파수가 증가함에 따라 감소하는 분산거동을 보였다. 또한 함수 비나 건조단위중량이 증가함에 따라 배향분극에 기여하는 물분자의 양이 증가하고 유전상수가 1인 공기의 양이 감소하여 유전상수가 증가하였다. 흙의 유전특성은 함수비와 건조단위중량을 모두 고려한 수분밀도에 선형적으로 비례하는 경향을 나타내었다. Maxwell식, Topp식, CRIM식에 의한 계산값과 측정된 값을 비교한 결과 기존의 식은 유전상수의 분산거동을 고려하지 못하고 있기 때문에 저주파에서는 측정값과 차이를 나타내었다.

A new low dielectric constant barium titanate - poly (methyl methacrylate) nanocomposite films

  • Upadhyay, Ravindra H.;Deshmukh, Rajendra R.
    • Advances in materials Research
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    • 제2권2호
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    • pp.99-109
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    • 2013
  • In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

Can be the dielectric constant of thin films as-grown at room temperature higher than that of its bulk material?

  • Jung, Hyun-June;Kim, Chung-Soo;Lee, Jeong-Yong;Yoon, Soon-Gil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.23-23
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    • 2010
  • The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

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Spin coating 공정을 이용한 Polymethyl methacrylate (PMMA) 박막의 polymer gate dielectric layer로써의 특성평가 (Properties of Polymethyl methacrylate (PMMA) for Polymer Gate Dielectric Thin Films Prepared by Spin Coating)

  • 나문경;강동필;안명상;명인혜;강영택
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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    • pp.29-32
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    • 2005
  • Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

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유전체 슬랩이 삽입된 원통형 공진기를 이용한 저손실 물질의 유전 상수 측정 (An Approach to Estimate Dielectric Constant of Low-Loss Materials Using Dielectric Slab Loaded Cylindrical Cavity Resonators)

  • 이원희
    • 한국전자파학회논문지
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    • 제19권10호
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    • pp.1115-1121
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    • 2008
  • 본 논문에서는 유전체의 유전 상수를 결정하기 위하여 유전체 슬랩을 원통형 공진기에 삽입하여 측정하는 기술을 제안한다. 유전 상수는 빈 공진기와 유전체 슬랩이 삽입된 공진기의 공진 주파수 편차에 의해 측정된다. 특성 방정식은 정확한 필드 해석에 의해 정의되었다 측정 장치는 HP8719A 벡터 네트웍 분석기와 금속 재질의 원통형 공동 공진기를 이용하였다. 이론적인 증명은 실험과 3D 시뮬레이터인 CST사의 MWS 4.0에 의해 확인되었다. 측정 된 결과는 전반적으로 만족하였다. 측정 된 테플론과 베이클라이트의 비유전율은 각각 2.03과 4.44이다.

고주파 기판용 PTFE 복합체 형성 압력에 따른 유전 특성 (Dielectric Characteristics of Polytetrafluoroethylene-based Composites for Microwave Substrates with Formation Pressure)

  • 최홍제;전명표;조용수;조학래
    • 한국전기전자재료학회논문지
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    • 제26권6호
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    • pp.429-433
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    • 2013
  • PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

Device and Circuit Performance Issues with Deeply Scaled High-K MOS Transistors

  • Rao, V. Ramgopal;Mohapatra, Nihar R.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권1호
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    • pp.52-62
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    • 2004
  • In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.