• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.388.1-388.1
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• 2014

The performance of PVA(polyvinyl alchol) is better than another organic dielectric material. Therefore, PVA has been researched for organic and in-organic dielectric material. But research of changing PVA's dielectric constant and leakage current by increasing temperature and concentration was insigificant. We try to find pure PVA and cross-linked PVA's characteristic of dielectric by changing temperature and concentration. 5/10/15wt% PVA concentration (5% interval) was in progress, PVA at $100/150/200/250^{\circ}C$ ($50^{\circ}C$ interval) of experiments was conducted in relation to temperature. The higher the concentration, leakage currents decrease, and dielectric constant is increased. With regard to temperature, we could not see a big change of leakage current and dielectric constant of pure PVA until $200^{\circ}C$. However, we could see a tendency to increase significantly at $250^{\circ}C$. Also, leakage current and dielectric constant of cross-linked PVA gradually increased from at $100^{\circ}C$ to $200^{\circ}C$ and then sharply increased from at $250^{\circ}C$. We tried to find that PVA's inner bonds(hydroxyl group (OH-) lead to the results.

• 한국전자파학회논문지
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• 제19권10호
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• pp.1115-1121
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• 2008

본 논문에서는 유전체의 유전 상수를 결정하기 위하여 유전체 슬랩을 원통형 공진기에 삽입하여 측정하는 기술을 제안한다. 유전 상수는 빈 공진기와 유전체 슬랩이 삽입된 공진기의 공진 주파수 편차에 의해 측정된다. 특성 방정식은 정확한 필드 해석에 의해 정의되었다 측정 장치는 HP8719A 벡터 네트웍 분석기와 금속 재질의 원통형 공동 공진기를 이용하였다. 이론적인 증명은 실험과 3D 시뮬레이터인 CST사의 MWS 4.0에 의해 확인되었다. 측정 된 결과는 전반적으로 만족하였다. 측정 된 테플론과 베이클라이트의 비유전율은 각각 2.03과 4.44이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.345-348
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• 1999

The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1092-1095
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• 2005

The effect of the dielectric constant (${\varepsilon}$) of bonding materials in screen-printed carbon nanotube cathode on field enhancement factor was investigated using the ANSYS software for high-efficient CNT-cathodes. The field enhancement factor increased with decreasing the dielectric constant and reaching a maximum value when the dielectric constant is 1, the value for a vacuum. This indicates that the best bonding materials for screen-printing CNT cathodes should have a low dielectric constant and this can be used as criteria for selecting bonding materials for use in CNT pastes for high-efficient CNT-cathodes

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• 자연과학논문집
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• 제8권1호
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• pp.17-22
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• 1995

Poly[bis(methoxyethoxyethoxy)phosphazene] : MEEP와 물로 구성된 두 종류 섞임체의 유전 상수를 임계온도 근처에서 측정하고 유전상수의 비정상성이 일어나는 온도와 농도를 사용하여 공존곡선을 얻었다. 공존곡선으로부터 얻어진 MEEP-물의 임계온도와 임계농도는 각각 $71^{\circ}C$, 5.5%이었다. 상전이 온도 근처에서 유전상수의 임계지수, $\theta$는 0.85였다. 유전상수의 주파수 의존도인 Maxwell-Wagnetr효과에 대해서 논의한다.

• 한국응용과학기술학회지
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• 제32권1호
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• pp.40-47
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• 2015

Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.31-34
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• 2009

We investigated the effect of relative dielectric constant of front dielectric layer on the efficacy of plasma display panel. Dielectric materials with relative dielectric constant of around 6 and 7 were developed. When the front dielectric layer had a low relative dielectric constant, power consumption decreased more than luminance did. And it led to efficacy enhancement. However, the minimum sustain voltage increased.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제9권3호
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• pp.57-67
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• 2002

반도체 칩의 신호처리속도를 향상시키기 위한 방법에는 세 가지가 있다. 첫 번째 방법은 금속배선의 배치(layout)를 바꾸는 것이고, 두 번째 방법은 배선으로 사용되는 금속의 비저항을 감소시키는 것이며, 세 번째 방법은 절연재료(insulating material)의 유전상수(dielectric constant)를 감소시키는 것이다. 첫 번째나 두 번째의 방법에 대해서는 많은 연구가 이루어졌고, 지금도 연구가 이루어지고 있다. 그러나 첫 번째나 두 번째의 방법을 통하여 얻을 수 있는 신호처리속도의 향상보다는 세 번째 방법을 통하여 얻을 수 있는 신호처리속도의 향상이 더 크다. 본 논문에서는 먼저 마이크로전자에 응용되기 위한 절연재료의 요구조건을 살펴보고, 지금까지 개발된 저유전율 고분자재료들을 간략하게 소개할 예정이다. 아울러 유전상수를 낮추기 위하여 최근 개발된 기공을 갖는 고분자재료들과 이들을 제조하기 위한 공정에 대해서도 간략하게 소개할 예정이다.