• Title/Summary/Keyword: Dielectric constant$(\varepsilon_r)$

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Plasma Generation of Ferroelectric Ball/Mica Sheet Double Barrier Discharge (운모박판(雲母薄板)/강유전체소구(强誘電體小球) 복합장벽방전(複合障壁放電)의 플라즈마발생특성)

  • Geum, Sang-Taek;Moon, Jae-Duk
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1314-1316
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    • 1995
  • Basic discharge characteristics of a ferroelectric ball and mica sheet double barrier have been studied for learning the fundamentals of the barrier discharges and for checking the potential to be used as a plasma generator. It is found that plasma generation of the plasma generator was influenced greatly by the dielectric constant of the ferroelectric ball barrier and applied power frequency. As a result, there are optimum conditions of the dielectric constant as a barrier and the applied frequency to generate ozone effectively, which were ${\varepsilon}_r$=600 and f=4 kHz at the present experimental case.

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Microstructure and Microwave Dielectric Properties of (1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9) Ceramics ((1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9)세라믹스의 미세구조와 마이크로파 유전 특성)

  • 김재식;최의선;이문기;류기원;이영희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.840-845
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    • 2004
  • The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and -36.02∼+3.46 ppm/$^{\circ}C$, respectively.

A Study on the Characteristic of PZT Thin Film Deposited on New Buffer Layer by Sputtering (스퍼터링으로 제조한 새로운 완충막 위의 PZT 박막 특성에 관한 연구)

  • 주재현;주승기
    • Journal of the Korean Ceramic Society
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    • v.30 no.4
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    • pp.332-338
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    • 1993
  • TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{\circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($\varepsilon$r) increased and then showed Pr=21 $\varepsilon$r=593 when rapid thermal annealed 80$0^{\circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.

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Microwave Dielectric Properties of $PbWO_{4}-TiO_{2}-CuO-B_{2}O_{3}$ Ceramics ($PbWO_{4}-TiO_{2}-CuO-B_{2}O_{3}$ 세라믹의 고주파 유전특성)

  • 이경호;최병훈
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.143-148
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    • 2001
  • PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.

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Piezoelectric and Dielectric Properties of Low Temperature Sintered Pb(Mn1/3Nb2/3)0.02(Ni1/3Nb2/30.12(ZrxTi1-x)0.86O3 System Ceramics

  • Yoo, Ju-Hyun;Lee, Sang-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.4
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    • pp.121-124
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    • 2009
  • In this study, in order to develop compositions of ceramics suitable for piezoelectric actuator and ultrasonic vibrator applications using low temperature sintering, multilayer, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$ and $Na_2CO_3$ as sintering aids. Their structural, piezoelectric and dielectric characteristics were investigated according to the Zr/Ti ratio. As the Zr/Ti ratio increased, the electromechanical coupling factor $k_p$, and piezoelectric constant $d_{33}$ and the mechanical quality factor $Q_m$ all increased with Zr/Ti ratio and then decreased after the ratio exceeded 50/50. At the ratio of Zr/Ti =49/51 and sintering temperature of $900^{\circ}C$; the density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$ piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ all showed the optimum values of 7.900 $g/cm^3$, 0.576, 856, 312 pC/N, 1,326, respectively. These property values are very suitable for multilayer ceramics actuator applications.

Piezoelectric and Dielectric Properties of Low Temperature Sintering Pb(Zn1/2W1/2)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr,Ti)O3 Ceramics

  • Yoo, Ju-Hyun;Lee, Kab-Soo;Lee, Su-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.3
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    • pp.91-95
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    • 2008
  • In this study, in order to develop the composition ceramics for low loss multilayer piezoelectric actuator application, $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ (abbreviated as PZW-PMN-PZT)ceramics according to the amount of $MnO_2$ addition were fabricated using two-stage calcinations method. And also, their dielectric and piezoelectric properties were investigated. At the 0.2 wt% $MnO_2$ added PZW-PMN-PZT ceramics sintered at $930^{\circ}C$, density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$, piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ showed the optimum value of $7.84g/cm^3$, 0.543, 1,392, 318.7 pC/N, 1,536, respectively for low loss multilayer ceramics actuator application.

The Piezoelectric and Dielectric Properties of PZT-PMN Piezoelectric Ceramics (PZT-PMN 압전 세라믹의 압전 및 유전 특성)

  • Lee, J.S.;Lee, Y.H.;Chae, H.I.;Jeong, S.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1439-1441
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    • 2001
  • In this paper, the piezoelectric and dielectric properties as a function of x and r in $yPbZr_xTi_{1-x}O_3-(1-y)Pb(Mn_{1/3}Nb_{2/3})O_3$ piezoelectric ceramics is investigated. As a results, when y is 0.95 and x is 0.505, electromechanical coupling factor($k_p$), permittivity(${{\varepsilon}_{33}}^T/{\varepsilon}_0$), piezoelectric strain constant($d_{33}$) and mechanical quality factor($Q_m$) are 58[%], 1520, 272 [pC/N] and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation. when sintering temperature is 1150[$^{\circ}C$], grain size is about 2 [${\mu}m$]. As y decreases, piezoelectric and dielectric properties and curie temperature decreases, but mechanical quality factor and sintering temperature increases.

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PZT-PMN Ceramics for Large Displacement Piezoelectric Devices

  • Lim, Kee-Joe;Park, Jae-Yeol;Lee, Jong-Sub;Kang, Seong-Hwa;Kim, Hyun-Hoo
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.76-80
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    • 2004
  • Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.

Effect of PbO on Microwave Dielectric Properties of (Pb, Ca) (Fe, Nb, Sn) O3 Ceramics

  • Yoon, Seok-Jin;Park, Ji-Won;Kang, Chong-Yun;Kim, Hyun-Jai;Jung, Hyung-Jin;Sergey Kucheiko;Cho, Bong-Hee
    • The Korean Journal of Ceramics
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    • v.4 no.3
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    • pp.249-253
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    • 1998
  • The influence of PbO additive on dielectric properties and sintering behavior of $(Pb_{0.46}Ca_{0.55})$ {$(Fe__1/2}Nb_{1/2}){0.9}Sn_{{0.1}$}$O_3$ ceramics has been investigated. The incorporation of a limited excess PbO ($\leq$2.0 wt. %) in the starting materials is quite beneficial for densification in the temperature range of 1150~$1175^{\circ}C$ in air. At a small doping level (0.8 wt. %) the ceramics prepared from powders calcined at $900^{\circ}C$ showed the best dielectric properties. The dielectric constants ($\varepsilon_r$) and Q.f were found to be 85.8~85.6 and 8530~8600 GHz, respectively. The temperature coefficient of resonant frequency ($\tau_f$) varied in the range of -2~4 $ppm/^{\circ}C$. Examination of the microstructure as well as analysis of the second phases in these materials revealed the presence of the pyrochlore-type phase which is detrimental to the dielectrics.

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Microwave Dielectric Properties $Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$ ceramic systems ($Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$계 세라믹스의 마이크로파 유전특성)

  • Yoon, Sang-Ok;Kim, Dae-Min;Shim, Sang-Heung;Kang, Ki-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.139-142
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    • 2003
  • Microwave dielectric properties of $Ca(Li_{1/4}Nb_{3/4})O_3-CaTiO_3$ ceramic systems were investigated with calcination temperatures and amounts of $CaTiO_3$ in the range of 0.2 to 0.4mol. $Ca(Li_{1/4}Nb_{3/4})O_3$ ceramics having orthorhombic crystal structure could be synthesized at $750^{\circ}C$ and sintered well at $1250^{\circ}C$. They showed the dielectric constant of 26, quality factor($Q{\times}f_o$) of 13,000 and temperature coefficient of resonant frequency(${\tau}_f$) of $-49{\pm}2ppm/^{\circ}C$ With adding the $CaTiO_3$ amount the dielectric constant and ${\tau}_f$ increased due to the solute of $CaTiO_3$ but the quality factor decreased. The 0.7$Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$ ceramic showed the dielectric constant of 44, quality factor($Q{\times}f_o$) of 12,000 and ${\tau}_f$ of $-9{\pm}1ppm/^{\circ}C$.

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