• Title/Summary/Keyword: Dielectric breakdown voltage

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Study on Condition of Fabrication Processing for R. F. High-power Unit Capacitor and Electrical Characteristics According to Addition of ZrO2 (고주파용 대용량 단위 유전체 제조공정과 ZrO2 첨가에 따른 전기적 특성 연구)

  • Ahn, Young-Soo;Kim, Joon-Soo;Park, Joo-Seok;Kim, Hong-Soo;Han, Moon-Hee;No, Kwang-Soo
    • Journal of the Korean Ceramic Society
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    • v.39 no.9
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    • pp.822-828
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    • 2002
  • Fabrication and electrical characterization of R. F. High-power unit capacitors were investigated to study on condition of fabrication processing for R. F. High-power unit capacitor and electrical characteristics according to addition of $ZrO_2$. The unit capacitors were fabricated using tape casting. The optimum mixture ratio of dielectrics and mixing binder for the slurry fabrication was 57.5∼60.0: 42.5∼40.0 wt%. The slurry viscosity was 4000∼5000 cps and casting state of green tape fabricated using these slurry was excellent. Optimum stacking was made by 200 kg/$cm^2$ pressure with 80$^{\circ}C$ heating. $ZrO_2$ was added to improve the electrical characteristics of unit capacitor, especially breakdown characteristics. The dielectric constant and loss factor of the unit condenser having different $ZrO_2$ amounts was not changed in the addition range of 1 to 5 wt%. Also, dielectric constant was not changed in the frequency range of 10 to 500 kHz. It was found that characteristics of resistance voltage was improved through the formation of $CaZrO_3$ and the reduction of particle size as about 3wt% $ZrO_2$ was added.

A Study on the Confirmation of non-flammabikity of the Cast Resin Mold Transformer in Subway Substation (지하철 변전실용 진공주형형 몰드변압기의 난연성 확인에 관한 연구)

  • 정용기;장성규;곽희로
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.12 no.2
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    • pp.99-107
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    • 1998
  • This dissertationhas confirmed the non-flam mability of cast mold transformer that is increasingly used lately. As a research progress, the investigation has been performed on the installation status and each line of the subway system which have the most mold transformer accidents, and the impediment status of the transformer for rectifier and the high-voltage distribution transformer per each manufacturer. Then, a high voltage mold of the actual mold transformer has been installed in the horiwntal heating furnace and the heat has been applied by the standard heating temperature curve of KSF 2257(Fireproof testing meth od of the construction structures: 1993). Accordingly, the combustibility of the mold transformer based on the test results has been found that 78 minutes has been required for the complete burning per the KSF 2257 combustion test curve and that, after stopping the heat application of the horizontal furnace after ignition, the flame progress has not been made but shown as the self-extinguishing characteristics when the flame progress has been checked. Thus, the non-flammability and self-extinguishability of the mold transformer have been confirmed. The result of this dissertation has indicated that the accident involving mold transformer has been progressed and expanded by the dielectric breakdown or void due to the crack in the mold rather than a fire accident caused by a short-circuit or an overload.r an overload.

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Study on the Tracking Characteristics Depending on Accelerated Degradation of PVC Insulation Material (PVC 절연재료의 가속열화에 따른 트래킹 특성에 관한 연구)

  • Choi, Su-Gil;Kim, Si-Kuk
    • Fire Science and Engineering
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    • v.31 no.6
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    • pp.91-98
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    • 2017
  • The present paper is a study on the tracking characteristics depending on accelerated degradation of PVC insulation material. In order to insulation degradation of PVC insulation material, the Arrhenius equation, a type of accelerated degradation test formula, was used to conduct accelerated degradation experiments with experiment samples prepared at the following age equivalents: 0, 10, 20, 30 and 40 years. Afterwards, a tracking experiment was conducted on the accelerated experiment samples as part of the KS C IEC 60112 criteria. When measuring the PVC tracking features according to the accelerated aging, the results showed that when 0.1% of ammonium chloride was added to the PVC insulating material, but no tracking occurred. However, depending on the age equivalent, The results of analyzing the current waveform and voltage waveform of the tracking propagation process showed the age equivalent from 0 years to 40 years displayed a break down in insulation resistance and even the BDB(before dielectric breakdown) sections did not maintain the same functionality of the original material. Based on a criterion of an age equivalent of 0 years, material with an age equivalent of 10 years posed a 1.4 times greater risk, material with an age equivalent of 20 years posed a 2 times greater risk, material with an age equivalent of 30 years posed a 4.6 times greater risk, and material with an age equivalent of 40 years posed a 7 times greater risk.

Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.