• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1107-1113
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• 2004

Dry film method for large size of PDP(Plasma Display Panel) module has been actively investigated. This method for lead-free transparent dielectric formation depends on green sheet technology. By adjusting the composition of transparent dielectric powders and organics, uniformly dispersed slurry was fabricated, Viscosity of the slurry exhibited pseudoplastic behavior for tape casting, Cast green sheets were tested under tensile condition at room temperature. It was found that the increase in transparent dielectric powder and binder ratio leads to decrease in strain to failure of green sheets from 120 % to 34 % and from 255 % to 4 %, respectively. Tensile strength of green sheets decreased abruptly with increase of transparent dielectric powder ratio, with minimum at 0.13 MPa. On the other hand, tensile strength increased continuously from 0.1 MPa to 2.4 MPa with increase of binder ratio. The green sheets were attached on the glass substrate and heated by following firing schedule. As a result, the best result was obtained when fired at 580 $^{\circ}C$ for 15 min and had transmittance of 78 % in visible range 550 nm.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.107-111
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• 2008

[ $BaO{\cdot}Nd_2O_3{\cdot}5TiO_2$ ] (BNT) ceramics modified with a borate glass containing Ba, Nd and Ti as glass constituents were investigated with regard to their sintering behavior and microwave dielectric properties. An addition of iso-component glass significantly improved the sinterabilty of the BNT ceramics and lowered the sintering temperature. A maximum density of $5.29\;g/cm^3$ and an x-y shrinkage of 17% were obtained for BNT ceramics containing 10wt.% of the glass sintered at $1100^{\circ}C$. The dielectric composition without the glass additive was only slightly densified at $1100^{\circ}C$. The resulting sample exhibited two crystalline phases, $BaNd_2Ti_5O_{14}$ and $Ba_2Ti_9O_{20}$, regardless of sintering temperature and glass content. When >10wt.% glass was added, exaggerated grain growth with a less uniform microstructure was found, resulting in the subsequent reduction of the fired density and the dielectric properties. BNT ceramics containing 10wt.% of the isocomponent glass sintered at $1100^{\circ}C$ for 4 h showed promising dielectric properties of k = 71.3 and Q = 1,330.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.70-74
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• 2013

Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1571-1574
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• 2005

Generally, the kerosene or the deionized water has been used for dielectric fluid in the electrical discharge machining. The spark occurs when the voltage is over the breakdown voltage and induces high temperature. In this study, the Oxygen gas is used as the dielectric. The voltage behavior in the dry Micro Electrical discharge machining is compared with that of the conventional Micro Electrical discharge machining. The dry Micro EDM has some advantages. The electrode wear isvery smaller than that of the conventional Micro EDM. The contamination in the dry Micro EDM can be drastically reduced comparing to that of the conventional Micro EDM. The Oxygen gas can be replaced as the dielectric successfully.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1992.11a
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• pp.37-40
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• 1992

This paper examined the existance behavior of charged particles by measuring polarity inversion current Thermal Stimulate Current (TSC) and analysed appearance mechanism of polarity inversion current Peak and Also investigated relation between ionic space charge format ion and dielectric breakdown by measuring D.C breakdown impulse breakdown D.C - impulse superposition as a sample of FET. As a result. lie found that dielectric breakdown is likely to happen due to ionic space charge at the transient state when applied polarity inversion voltage and that charged partion of TSE Peak at the high temperature was the same as that of polarity inversion current. Also there was no effect on ionic space charge about the dielectric breakdown in stationary state when applied D.C voltage.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.179-183
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• 2007

BCB $Resin-BaNd_2Ti_4O_{12}$(BNT) composites with BNT contents were prepared by tape casting method and epoxy resin-BNT composites were prepared by using heating press. Their dielectric properties and microstructures were investigated. The dielectric properties such as dielectric constant and dielectric loss at 1 MHz for epoxy resin-BNT composites and BCB resin-BNT composites are improved with an increase of BNT volume fraction. The dielectric constant of the Epoxy-BNT composite increased from 5.9 to 7.8 as the volume fraction of BNT increased from 15 to 25. The dielectric constant of the BCB-BNT composite increased from 9.1 to 15.5 as the volume fraction of BNT increased from 30 to 50. The dielectric behavior of BCB-BNT system can be explained by Lichtenecker's equation. The dielectric constant of epoxy resin-BNT composite is smaller than that of BCB resin-BNT composite. These results are considered to be related with the dispersion of BNT filler in polymer matrix from the result of SEM photograph.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.935-941
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• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.839-845
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• 1995

The structural and dielectric properties of Pb(Mg1/3Nb2/3)O3 ceramics substituted by Nd3+, La3+, K+ and Na+ were studied over 0~50 at.% substituent content. The 1 : 1 ordering behavior of Mg2+ and Nb5+ ions in the B site sublattice was observed in Nd3+-and La3+-modified compounds. The degree of ordering was increased with Nd3+, La3+ content in the compounds. But K+-or Na+-modified compounds did not exhibit the ordering behavior. This was explained by charge and size effect of A and B site cations and oxygen vacancies. As the mole fractions of substituent increased, the maximum values of dielectric constants were rapidly decreased and the phase transitions were broadened. Phase transition temperature was correlated with the covalency of A-O and B-O bonding.