• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.2
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• pp.245-253
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• 2010

The reliability problems of flip chip packages subjected to temperature change during the packaging process mainly occur due to mismatches in the coefficients of thermal expansion as well as features with time-dependent material properties. Resin molding compounds like glass fiber reinforced epoxy composites used as the dielectric layer in printed circuit boards (PCB) strongly exhibit viscoelastic behavior, which causes their Young's moduli to not only be temperature-dependent but also time-dependent. In this study, the stress relaxation and creep tests were used to characterize the viscoelastic properties of the glass fiber reinforced epoxy composite. Using the viscoelastic properties, finite element analysis (FEA) was employed to simulate thermal loading in the pre-baking process and predict thermal warpage. Furthermore, the effect of viscoelastic features for the major polymeric material on the dielectric layer in the PCB (the glass fiber reinforced epoxy composite) was investigated using FEA.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.183-188
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• 2002

In the present study AI$(CH_3)_3)$films were deposited by the ALD technique using trimethylaluminum(TMA) and ozone to improve the quality of the AI$(CH_3)_3)$ films, since the $OH^-$ radicals existing in the AI$(CH_3)_3)$ films deposited using TMA and $H_2O$ degrade the physical and the dielectric properties of the AI$(CH_3)_3)$ film. The XPS analysis results indicate that the $OH^-$ radical concentration in the AI$(CH_3)_3)$film deposited using $O_3$is lower than that using $H_2O$. The etch rate of the AI$(CH_3)_3)$film deposited using $O_3$is also lower than that using $H_2O$, suggesting that the chemical inertness of the former is better than the latter. The MIS capacitor fabricated with the TiN conductor and the $Al_2$O$_3$dielectrics formed using $O_3$offers lower leakage current, better insulating property and smaller flat band voltage shift $({\Delta}V_{FB})$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.316-327
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• 1997

Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

• The Korean Journal of Rheology
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• v.11 no.1
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• pp.9-17
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• 1999

Viscoelastic characteristics of cured phenolic resin/carbon fiber composite materials were investigated through glass transition and degradation reaction processes in the high temperature region up to $400^{\circ}C$. A typical glass transition of the cross-linked thermoset polymer was followed by irreversible degradation reactions, which were exhibited by the increasing storage modulus and loss modulus peak. A degradation master curve was constructed by using the vertical and horizontal shift factors, both of which complied well with the Arrhenius equation in light of the kinetic expression of degradation rate constants. Using an analogy to the Havriliak-Negami equation in dielectric relaxation phenomena, a viscoelastic modeling methodology was developed to characterize the frequency- and temperature-dependent complex moduli of the degrading thermoset polymer composite systems. The temperature-dependent relaxation time of the degrading composites was determined in a continuous fashion and showed a minimum relaxation time between the glass transition and degradation reaction regions. The capability of the developed modeling methodology was demonstrated by describing the complex behavior of the viscoelastic complex moduli of reacting phenolic resin composite systems.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.285-292
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• 1992

Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.177-177
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• 2009

이동통신 시스템의 소형화 경량화 다기능화 추세에 따라 세라믹 모듈의 정밀도 및 집적도가 중요한 요소로 부각되고 있다. 이러한 모듈의 고집적화 추세에 대응하기 위하여 세라믹 소성시 수축율 제어가 필수적인 요소로 부각되고 있으며, 이에 따라 X, Y축의 소성 수축율을 0에 근접하게 제어하는 무수축 소성 기술이 요구되고 있다. 선행연구를 통하여 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 무수축 소성 기술 구현 가능성을 확인하였으나, 아직 해결해야 할 문제점들이 있다. glass가 $Al_2O_3$층으로 infiltration되는 과정에서 glass층이 de-lamination 되는 결함이 발견되었으며 이는 유전체 기판의 Q값을 낮추고 기판의 신뢰성에 악영향을 줄 수 있어 이에 대한 개선이 필요한 실정이다. 본 연구에서는 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 선행 실험에서 관찰된 기판 내부의 de-lamination 현상에 대한 원인을 규명하고 해결책을 제시하고자 하였다. glass 유동과 바인더 burn-out이 동시에 진행됨에 따라 기공이 생성되며 glass가 점성유동함에 따라 이 기공이 glass층으로 모이게 되어 de-lamination 현상이 발생하는 것으로 사료된다. 이를 해결하기 위하여 de-lamination층에 $Al_2O_3$의 tamping을 시도하여 glass층의 기공이 빠져 나갈 수 있는 channel 을 형성하고, 남아있는 기공을 $Al_2O_3$로 채우는 효과를 얻을 수 있었다. 이에 따라 기판의 밀도와 Quality factor 값이 향상되었으며 미세구조가 치밀한 무수축 기판을 제작할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.38-44
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• 2002

Dispersion stability of nano-sized rutile TiO$_2$powder with acicular typed primary particle produced by homogeneous precipitation process at low temperatures was studied in aqueous and non-aqueous media in the presence of various electrolytes. The zeta potential measurements have shown that the addition of electrolytes to aqueous and non-aqueous dispersion media leads to charge reversal on TiO$_2$particle surface. The electrostatic repulsive forces acting on between TiO$_2$particles dispersed in non-aqueous media were found to be significantly greater than that in aqueous media, which relate closely to the physical properties of the organic solvents, such as viscosities and dielectric constants. The pH values, the concentration of electrolytes and the valence of the ions have changed greatly the surface potential of TiO$_2$ particles and have governed the dispersion behavior of TiO$_2$particles virtually.

• Journal of Korean Society for Atmospheric Environment
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• v.30 no.6
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• pp.577-585
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• 2014

A series of experiments using atmospheric-pressure non-thermal plasma coupled with transition metal catalysts were performed to remove ethylene from agricultural storage facilities. The non-thermal plasma was created by dielectric barrier discharge, which was in direct contact with the catalyst pellets. The transition metals such as Ag and $V_2O_5$ were supported on ${\gamma}-Al_2O_3$. The effect of catalyst type, specific input energy (SIE) and oxygen content on the removal of ethylene was examined to understand the behavior of the hybrid plasma-catalytic reactor system. With the other parameters kept constant, the plasma-catalytic activity for the removal of ethylene was in order of $V_2O_5/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ from high to low. Interestingly, the rate of plasma-catalytic ozone generation was in order of $V_2O_5/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$, implying that the catalyst activation mechanisms by plasma are different for different catalysts. The results obtained by varying the oxygen content indicated that nitrogen-derived reactive species dominated the removal of ethylene under oxygen-lean condition, while ozone and oxygen atoms were mainly involved in the removal under oxygen-rich condition. When the plasma was coupled with $V_2O_5/{\gamma}-Al_2O_3$, nearly complete removal of ethylene was achieved at oxygen contents higher than 5% by volume (inlet ethylene: 250 ppm; gas flow rate: $1.0Lmin^{-1}$; SIE: ${\sim}355JL^{-1}$).

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.