• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1982-1990
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• 1994

We implemented a PLDRO(Phase Locked Dielectric Resonator Oscillator) using the concept of the feedback property of PLL(Phase Locked Loop) for Ku-band(10.95-11.70 GHz). The conventional approaches to a PLDRO design use varactor diode tuning method.. But in theis paper, the PLDRO has the advantage of the frequency sensitivity to changes in the supple voltage of the oscillating device without the frequency-variable part by varactor diode voltage-control. and uses a SPD(Sampling Phase Detector) for phase-comparision. The PLDRO is composed of the DRO phase-locked to the reference signal of UHF band by using a SPD for high frequency stability and can be available for European FSS(Fixed Satellite Service) at 10.00GHz. The PLDRO generates the output power of 8.67 dBm at 10.00 GHz and has a phase noise of -81 dBc/Hz at 10 kHz offset from carrier. The hamonic and spurious characteristics have -42.33 dBc and -65dBc respectively. This PLDRO has much better frequency stability, lower phase noise, and more economical effect for a satellite system than conventional DRO.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.541-546
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• 2010

The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.872-878
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• 2014

This paper proposes a measurement method of the complex relative permittivity of semi-solid materials using a new cavity structure. Semi-solid materials are positioned in the proposed cavity where an aperture exists on each corner of the upper part and a ground plane is separated. In order to show the validation of the proposed method, we measured the complex relative permittivity of distilled water and 0.9 % saline by sensing a shift of resonant frequency and using Critical-Points Method, and compared the results with those derived from the Cole-Cole equation.

• Journal of Advanced Navigation Technology
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• v.6 no.1
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• pp.52-62
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated. The Push-Push oscillator for suppressing fundamental frequency 10 GHz and enhancing 20 GHz has been designed and realized in microstrip configuration on 20 mil thick RT-Duroid(${\varepsilon}_r$=2.52) teflon substrate. Two different types of power combiners, T-junction and Wilkinson, have been considered. Whenever one type of the combiners has been adopted for the output circuit, output power, phase noise and fundamental frequency suppression characteristics of the oscillator have been measured. When the Wilkinson power combiner was used, a maximum output power of 5.67 dBm, a phase noise of -105.5 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -29.33 dBc have been measured. When the T-junction power combiner was used, a maximum output power of -1.17 dBm, a phase noise of -102.2 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -17.84 dBc have been measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.335-344
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• 2004

A low phase noise EQM(Engineering Qualified Model) LO(Local Oscillator) has been developed for Ka-band satellite transponder. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is also designed using a high impedance inverter coupled with dielectric resonator to improve the phase noise performances out of the loop bandwidth. The mechanical analysis fur housing and the thermal analysis fur circuit board are achieved. This EQM LO is applied to Ka-band satellite transponder of EQM level after environmental experiments for space application. The LO has the harmonic suppression characteristics above 52 ㏈c and requires low power consumption under 1.3 watts. The phase noise characteristics are exhibited as -101.33 ㏈c/㎐ at 10 ㎑ offset frequency and -114.33 ㏈c/㎐ at 100 ㎑ offset frequency, with the output power of 14.0 ㏈m${\pm}$0.17 ㏈ over the temperature range of -15∼＋65$^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1147-1158
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• 2008

In this paper, we designed a phase-looking circuit that locks the 16.8 GHz VTDRO to a 700 MHz SAW oscillator using SPD as a phase detector Direct phase locking with loop filter alone causes the problem of lock time, so VTDRO is phase leered by loop filter with the aid of time varying square wave current generator. The current generator is related to the loop filter and needs the systematic toning. In this paper, a systematic design of the current generator and loop filter is presented. The fabricated PLDRO shows a stabilized frequency of 16.8 GHz, a output power 6.3 dBm, and a phase noise of -101 dBc/Hz at the 100 kHz offset.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.78-85
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• 1998

The design method of a temperature stable bandpass filter using dielectric coaxial resonators of with two dielectric ceramics with opposite signs of temperature coefficient of dielectric constant (${\tau}_{\epsilon}$) to compensate for each other in this method. $MgTiO_3$(${\tau}_{\epsilon}$=+99 ppm/${\circ}C$) as a positive ${\tau}_{\epsilon}$ material and Ba($Zn_{1/3}Nb_{2/3}$)$O_3$(${\tau}_{\epsilon}$=-77ppm/${\circ}C$) as a negative material were selected. The length of a SIR for the temperature stability was calculated according to the design method and the susceptance slope parameter of the SIR was obtained. A temperature stable bandpass filter using dielectric SIR's was designed, simulated and fabricated. The center frequency of this filter was 915 MHz and the pass bandwidth was 20 MHz. Temperature properties of this bandpass filter by simulations were compared with the measured results of the bandpass filter fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.492-498
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• 2002

In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2 mm$(0.11 [cc]).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.581-584
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• 2002

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.653-656
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• 2002

In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2$ mm(0.11[cc]).