• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.431-434
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• 2016

Tris-HCl buffer solution is extensively used in biochemistry and molecular biology to maintain a stable pH for biomolecules such as nucleic acids and proteins. Here we report on the high-precision THz dielectric spectroscopy of a 10 mM Tris-HCl buffer. Using a double Debye model, including conductivity of ionic species, we measured the complex dielectric functions of Tris-HCl buffer. The fast relaxation time of water molecules in Tris-HCl buffer is ~20% longer than that in pure water while the slow relaxation time changes little. This means that the reorientation dynamics of Tris-HCl buffer with such a low Tris concentration is quite different from that of pure water.

• Journal of the Korean Electrochemical Society
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• v.22 no.2
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• pp.53-59
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• 2019

To examine the solution structure of electrolytes, it is very important to understand ion-ion and ion-solvent interactions. In this review, we introduce the basic principle of dielectric relaxation spectroscopy (DRS) and studies of electrolyte structure. DRS is a type of impedance method, which measures the dielectric properties of electrolytes over a high frequency domain at levels of tens of GHz. Therefore, DRS provides information on the different polar chemical species present in the electrolyte, including the type and concentration of free solvents and ion pairs with dipole moments. The information of DRS is complementary to the information of conventional analytical techniques (Infrared/Raman spectroscopy, nuclear magnetic resonance (NMR), etc.) and thus enables a broad understanding of electrolyte structure.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.163-165
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• 2012

Impedance spectroscopy informs electrical properties of materials as accumulated charges, contact status between electrode and organic materials. We carried out impedance spectroscopy of organic light-emitting diodes as ITO/Alq3(60 nm)/Al on temperatures from 10 K to 300 K. The result described Z'-Z" plot, cole-cole plot and dielectric relaxation time τ. Z'-Z" plot means that real and imaginary part of materials in organic and electrode by frequencies and temperature. Z' as real part of impedance by applied frequency depending on temperature shows the plateau in low frequency region as Rs+ Rp and over 100 kHz in high frequency region as Rs. Cole-cole plot shows resistance of materials in equivalent circuit of the device by temperatures. And equivalent circuit and dielectric relaxation could be accomplished by using the complex impedance analysis.

• Macromolecular Research
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• v.14 no.6
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• pp.617-623
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• 2006

In order to achieve an oriental lacquer (OL) film with a thick consistency, UV-curable silicone acrylate (SA) was added to OL by a dual curing process. The addition of 5 wt% UV-curable SA to the OL fomulation enabled the preparation via a single drying step of a $77{\mu}m-thick$ film exhibiting excellent surface properties. FTIR-ATR was used to investigate the effect of UV-curable SA on the behavior of film formation during curing, and the relaxation behavior of the produced films was investigated by dielectric spectroscopy. Dielectric properties were measured in the frequency range $10^{-2}-10^5\;Hz$ at various temperatures between -100 and $200^{\circ}C$. The results demonstrated that OL modified by UV-curable SA has a higher glass transition temperature and stronger secondary relaxation at a lower temperature than the conventional OL system. The OL film modified with UV-curable SA was presumed to be harder at the surface and tougher than conventional OL film.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.291-296
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• 2014

In recent years, researchers have extensively investigated polymers filled with inorganic nanoparticles because these materials present improved physical properties relative to those of conventional unfilled polymers. Oxides, silica in particular, are the most commonly used inorganic particles because they possess good properties and can be fabricated at a low cost. However, oxides are hydrophilic in nature, and this leads to the presence of water at the interface between the nanoparticles and the polymer matrix. Due to the predominance of particle-matrix interfaces in nanocomposites, the presence of water at the interlayer region can be problematic. Moreover, the hydrophobic nature of most polymers, particularly for polyolefins such as polyethylene, may make it difficult to remove this interfacial water. In this paper, as-received and moistened samples of agglomerated nanosilica/polyethylene were dried using an isothermal treatment at $60^{\circ}C$, and the efficacy of this treatment was studied using dielectric spectroscopy. The Maxwell-Wagner-Sillars relaxation peaks were observed to shift to lower frequencies by three decades, and this was linked to a modification of the water content, due to drying, at the interfaces between silica and polyethylene and at the interfaces within the nanosilica agglomerates. The evolution of the extracted retardation time is explained by the nanosilica hydrophily and the free volume introduced by the nanoparticles.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1162-1164
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• 1993

The Thermally Stimulated Current(TSC) spectroscopy has been applied to study the influence of the structual cahange and interface on the electrical properties of epoxy composites. Three DGEBA-MeTHPA matrix model samples mixed different ratios and silica($SiO_2$) filled sample and silaln treating-filled sample has been studied. Above room temperature, the relaxation mode $\alpha$ peak associated with Tg has been located at $110^{\circ}C$. Below glass transition temperature(Tg), three relaxation modes are observed in all samples: a $\beta$ mode situated at $10^{\circ}C$, a $\gamma$ mode located at $-40^{\circ}C$ and a $\delta$ mode appeared in $-120^{\circ}C$. The analysis of its fine structure indicates that constitution of elementary processes is characterized by the activation energy and relaxation time. Also the dielectric relaxation properties have been investigated to compare the the change of the molecular structure and motion to the relaxation properties and conduction mechanism in TSC spectra.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.99-106
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• 2013

Polyaniline-yttrium trioxide (PAni-$Y_2O_3$) composites were synthesized by the in-situ polymerization of aniline in the presence of $Y_2O_3$ The composite formation and structural changes in these composites were investigated by X-ray diffraction (XRD), Fourier transform infra red spectroscopy (FTIR), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The direct current (DC) electrical conductivity of the order of $0.51{\times}10^{-2}\;S\;cm^{-1}-0.283\;S\;cm^{-1}$ in the temperature range 300 K-473 K indicates semiconducting behavior of the composites. Room temperature AC conductivity and dielectric response of the composites were studied in the frequency range of 10 Hz to 1 MHz. The variation of AC conductivity with frequency obeyed the power law, which decreased with increasing weight percentage (wt %) of $Y_2O_3$. Studies on dielectric properties shows the relaxation contribution coupled by electrode polarization effect. The dielectric constant and dielectric loss in these composites depend on the content of $Y_2O_3$ with a percolation threshold at 20 wt % of $Y_2O_3$ in PAni. Electromagnetic interference shielding effectiveness (EMI SE) of the composites in the frequency range 100 Hz to 2 GHz was in the practically useful range of -12.2 dB to -17.2 dB. The observed electrical and shielding properties were attributed to the interaction of $Y_2O_3$ particles with the PAni molecular chains.

• Applied Microscopy
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• v.47 no.3
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• pp.131-147
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• 2017

In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.