• 제목/요약/키워드: Dielectric Property

검색결과 460건 처리시간 0.041초

변수화 반도체 모델을 이용한 Cubic Zinc-blonde CdSe의 유전함수 분석 (Dielectric Function Analysis of Cubic CdSe Using Parametric Semiconductor Model)

  • 정용우;공태호;이선영;김영동
    • 한국진공학회지
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    • 제16권1호
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    • pp.40-45
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    • 2007
  • 본 연구에서는 광전자 소자에 폭넓게 사용되는 ZnCdSe 화합물 반도체의 end-point인 CdSe의 유전함수 spectrum을 Vacuum Ultra Violet spectroscopic ellipsometry(타원편광분석법) 측정하여 분석하였다. 측정 결과는 변수화 모델을 이용하여 분석하였으며 그 결과 6 eV 이상에 존재하는 전자전이점들을 확인할 수 있었고 CdSe의 Critical Point(CP) 구조를 수치화 함으로써 온도나 화합물 함량에 따른 광특성 의존성 연구 등에 활용될 수 있는 database를 확보하였다.

$Ta_2O_5$의 유전 특성과 안정성에 관한 연구 (The study on dielectric and thermal property of $Ta_2O_5$ Thin-films)

  • 김인성;송재성;이동윤;김도한;김현식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1487-1489
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    • 2001
  • The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

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Effect of Sintering Temperature on the Dielectric Property of Lead Magnesium Niobate-Lead Titanate Ceramics

  • Hwang, Hak-In;Jung, Jong-Man;Park, Joon-Shik
    • The Korean Journal of Ceramics
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    • 제4권4호
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    • pp.286-291
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    • 1998
  • Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

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$TiO_2$의 유전성에 미치는 ZnO의 영향 (Effect of Zinc Oxide on the Dielectric Property of Rutile ($TiO_2$))

  • 윤기현;송효일;김창수
    • 한국세라믹학회지
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    • 제17권3호
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    • pp.129-132
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    • 1980
  • The effect of the additive on the dielectric property of TiO2 containing 0-2.5 wt. % ZnO was investigated as a function of frequency $5$\times$10^4$ to $6.3$\times$10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant decreased due to increasing density and grain size effect with increasing ZnO concentration.

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마이크로파에서 얇은 유전체의 유전상수 및 유전손실의 측정방법에 대한 연구 (A Dielectric Measurement Technique of Thin Samples at Microwave Frequencies)

  • Kim, Jin-Hun
    • 대한전자공학회논문지
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    • 제25권12호
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    • pp.1582-1585
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    • 1988
  • A cavity perturbation technique is employed to determine the dielectric property of thin samples. Substrates in microwave integrated circuits are fabricated in sheet form and are expected to have a dielectric constant less than 10 and a dielectric loss better than 10**-3. This research aimed to determine both dielectric constant and dielectric loss with good accuracy. The tecynique makes use of thin circular disk samples placed in a right circular cylindrical cavity. The accuracy of measurements is within \ulcorner% for dielectric constnat and 3x10**-4 for dielectric loss.

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The Effects of Hydrophobic Buffer Layer Without Losing Dielectric Property on Organic Transistors

  • Song, June-Yong;Jung, Jae-Il;Choi, Yoon-Seuk;Kim, Hak-Rin;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.737-740
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    • 2007
  • The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

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Effects of Hydrophilic Surface Treatment on SUS Substrates by Using Dielectric Barrier Discharge

  • Joa, Sang-Beom;Kang, In-Je;Yang, Jong-Keun;Lee, Heon-Ju
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.458-458
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    • 2012
  • Fuel Cell is used stacking metal or polymer substrate. This hydro property of substrate surface is very important. Usually, surface property is hydrophilic. The surface oxidation of SUS is investigated through plasma treatments with an atmospheric-pressure dielectric barrier discharge (DBD) for increasing hydrophilic property. The plasma process makes an experiment under various operating conditions of the DBD, which operating conditions are treatment time, plasma gas mixture ratio, the plasma source supply frequency. Two kinds of SUS substrate, SUS-304 and SUS 316L, were used. Discharge frequency has a crucial impact on equipment performance and gas treatment. After the plasma treatment of a SUS plate, highly improved wettability was noted. But, when high oxygen supply, the substrate damaged seriously.

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Dielectric Thin Film Using Atmospheric Pressure Plasma Polymerization

  • Choi, Sung-Lan;Kim, Hong-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1444-1446
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    • 2009
  • The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

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