• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.133-138
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• 2013

Acrylonitrile-butadiene-styrene (ABS) plastic is a polymer material extensively used in electrical and electronic applications. Nickel (Ni) thin film was deposited on ABS by electroless plating, after its surface was treated and modified with atmospheric plasma generated by means of dielectric barrier discharges (DBDs) in air. The method in this study was developed as a pre-treatment for electroless plating using DBDs, and is a dry process featuring fewer processing steps and more environmentally friendliness than the chemical method. After ABS surfaces were modified, surface morphologies were observed using a scanning electron microscope (SEM) to check for any physical changes of the surfaces. Cross-sectional SEM images were taken to observe the binding characteristics between metallic films and ABS after metal plating. According to the SEM images, the depths of ABS by plasma are shallow compared to those modified by chemically treatment. The static contact angles were measured with deionized (DI) water droplets on the modified surfaces in order to observe for any changes in chemical activities and wettability. The surfaces modified by plasma showed smaller contact angles, and their modified states lasted longer than those modified by chemical etching. Adhesion strengths were measured using 3M tape (3M 810D standard) and by 90° peel-off tests. The peel-off test revealed the stronger adhesion of the Ni films on the plasma-modified surfaces than on the chemically modified surfaces. Thermal shock test was performed by changing the temperature drastically to see if any detachment of Ni film from ABS would occur due to the differences in thermal expansion coefficients between them. Only for the plasma-treated samples showed no separation of the Ni films from the ABS surfaces in tests. The adhesion strengths of metallic films on the ABS processed by the method developed in this study are better than those of the chemically processed films.

• 한국결정성장학회지
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• 제9권5호
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• pp.463-469
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• 1999

$K_3$$Li_2$$Nb_5$$O_{15}$KLN) 단결정을 $K_x$$Li_{1-x}$$NbO_3$의 조성에서 x= 0.04~0.6으로 결정성장방법으로 성장시켰다. 균열이 없는 양질의 결정성장을 위해 c축 및 a축 방향을 택하였고, 단결정 성장을 위한 최적의 조건에 대하여 연구하였다. 성장된 결정은 편광현미경 관찰을 통해 일축성 무늬를 볼수 있었고, X-선 회절실험에서 결정된 격자상수는 a=b=12.500 $\AA$, c=3.996$\AA$이었으며, 1HF : $2HNO_3$ 용액의 부식에서 c축 방향으로 정사각형 및 a축 방향으로 직사각형의 부식상을 볼수 있었다. 광투과율 측정과 온도에 따른 유전상수 측정등을 통해 KLN 결정의 광학적 특성 및 다른 조성을 갖는 시료에서 유전특성을 조사하였다. $420^{\circ}C$에서 상전이 온도를 갖는 결정은 확산상전이(diffuse phase transition) 특성을 갖는 반면 $493^{\circ}C$에서 상전이 온도를 보이는 결정은 날카로운(shap) 유전특성을 나타내었다.

• 한국정보통신학회논문지
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• 제18권12호
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• pp.2823-2830
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• 2014

안테나에서의 소형화 기법은 안테나의 물리적인 모양을 변형하여 공진에 필요한 전기적인 길이를 주어진 공간에서 최대화하고 경우에 따라서 고차의 공진모드를 이용하는 방법이다. 가장 대표적인 설계방법으로는 헬리컬 안테나, 미앤더 안테나, 프랙탈 안테나 등이다. 본 논문에서 제안한 소형화 안테나는 프랙탈 개념의 koch curve 구조이다. 안테나는 ISM 대역의 2.45 GHz 주파수이며, 마이크로스트립 패치 안테나로 제작하였다. koch curve 마이크로스트립 패치 안테나는 유전율 4.7, 유전체 높이 1.6 mm, 손실 탄젠트 0.02의 FR4 epoxy 기판을 사용하였으며, 에칭공정으로 제작하였다. 제작된 안테나의 반사손실 결과는 2.45 GHz 대역에서 -23.17 dB, VSWR 결과는 1.1491, 임피던스 정합은 $46{\Omega}$이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Current Optics and Photonics
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• 제2권2호
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• pp.125-133
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• 2018

We report an in-depth analysis of the design and fabrication of multilayer dielectric (MLD) diffraction gratings for spectral beam combining at a wavelength of 1055 nm. The design involves a near-Littrow grating and a modal analysis for high diffraction efficiency. A range of wavelengths, grating periods, and angles of incidence were examined for the near-Littrow grating, for the $0^{th}$ and $-1^{st}$ diffraction orders only. A modal method was then used to investigate the effect of the duty cycle on the effective indices of the grating modes, and the depth of the grating was determined for only the $-1^{st}$-order diffraction. The design parameters of the grating and the matching layer thickness between grating and MLD reflector were refined for high diffraction efficiency, using the finite-difference time-domain (FDTD) method. A high reflector was deposited by electron-beam evaporation, and a grating structure was fabricated by photolithography and reactive-ion etching. The diffraction efficiency and laser-induced damage threshold of the fabricated MLD diffraction gratings were measured, and the diffraction efficiency was compared with the design's value.

• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.79-84
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• 2010

3차원 Si 칩 패키징 공정을 위한 비아 홀(TSV: Through-Si-Via) 및 Au 시드층 형성, 전기 도금을 이용한 Cu 충전기술과 범핑 공정 단순화에 관하여 연구하였다. 비아 홀 형성을 위하여 $SF_6$ 와 $C_4F_8$ 플라즈마를 교대로 사용하는 DRIE(Deep Reactive Ion Etching) 법을 사용하여 Si 웨이퍼를 에칭하였다. 1.92 ks동안 에칭하여 직경 40 ${\mu}m$, 깊이 80 ${\mu}m$의 비아 홀을 형성하였다. 비아 홀의 옆면에는 열습식 산화법으로 $SiO_2$ 절연층을, 스퍼터링 방법으로 Ti 접합층과 Au 시드층을 형성하였다. 펄스 DC 전기도금법에 의해 비아 홀에 Cu를 충전하였으며, 1000 mA/$dm^2$ 의 정펄스 전류에서 5 s 동안, 190 mA/$dm^2$의 역펄스 조건에서 25 s 동안 인가하는 조건으로 총 57.6 ks 동안 전기도금하였다. Si 다이 상의 Cu plugs 위에 리소그라피 공정 없이 전기도금을 실시하여 Sn 범프를 형성할 수 있었으며, 심각한 결함이 없는 범프를 성공적으로 제조할 수 있었다.

• 공업화학
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• 제17권4호
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• pp.335-342
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• 2006

금속 알루미늄의 낮은 환원전위는 전기화학적 산화반응을 통하여 알루미늄과 그 표면에 존재하는 산화막의 구조 및 성질의 변화를 일으킨다. 산성용액에서 알루미늄을 전기화학적으로 에칭하여 표면적을 확대시키고 중성의 용액에서 알루미늄 표면에 치밀한 유전체 산화막을 형성시켜 커패시터의 전극으로 이용하고 있다. 저온의 산성용액에서는 양극산화시 나노크기의 다공층 산화막이 형성되며, 나노구조체의 템플레이트로 사용되고 있다. 이와같은 알루미늄의 전기화학적 특성은 알루미늄을 새로운 기능성을 가진 재료로 변화시킴으로서 다양한 분야에서 응용될 것으로 기대된다.