• 한국재료학회지
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• 제9권12호
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• pp.1216-1221
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• 1999

TMGa와 유전체 장벽방전에 기초한 질소함유 활성종을 이용하여 (0001) 사파이어 기판위에 GaN 박막을 저온에서 성장시켰다. III-V 질소화합물 반도체의 에피막 성장에 있어서 암모니아는 유기금속 화학증착법에서 지금까지 알려진 가장 보편적인 질소 공급원이며 충분한 질소공급을 위해 $1000^{\circ}C$ 이상의 고온 성장이 필수적이다. GaN 박막을 비교적 저온에서 성장시키기 위하여 질소 공급원으로 암모니아 대신 유전체 장벽방전을 이용하였다. 유전체 장벽방전은 전극사이에 유전체 장벽을 설치하여 arc를 조절하는 방전이며 수 기압의 높은 공정압력보다 훨씬 높으므로 기판표면까지 전달하는데도 이점이 있다. GaN 박막의 결정성과 표면형상은 성장온도, 완충층에 따라 변화하였으며, $700^{\circ}C$의 저온에서도 우수한 (0001) 배향성을 갖는 GaN 박막을 성장할 수 있었다.

• Journal of Korean Society for Atmospheric Environment
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• 제18권E1호
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• pp.13-20
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• 2002

The electrical and chemical properties of the dielectric barrier discharge (DBD) process for the benzene removal were investigated. The benzene removal was initiated with the applied voltage higher than the discharge onset value. The removal efficiency over 95 % was obtained at approximately 1.6 kJ lite $r^{r-1}$ of the electrical energy density. The increase of the inlet concentration decreased the removal efficiency. However, the benzene decomposition rate increased with the inlet concentration . While the increase of the gas retention time enhanced the removal efficiency, the decomposition rate decreased. Identification of the optimum condition between the decomposition rate and the removal efficiency is required for field applications of the DBD process.s.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1500-1503
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• 2009

In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• 한국환경과학회지
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• 제28권5호
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• pp.495-502
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• 2019

This study was conducted to investigated the possibility of inactivating wilt germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge (DBD) plasma in a hydroponic system. Recirculating hydroponic cultivation system for inactivation was consisted of planting port, LED lamp, water tank, and circulating pump for hydroponic and DBD plasma reactor. Two experiments were conducted: batch and intermittent continuous process. The effect of plasma treatment on Total Residual Oxidants (TRO) concentration change, Fusarium inactivation and growth of lettuce were investigated. In the batch experiment, most of the Fusarium was inactivated at a TRO concentration of 0.15 mg/L or more at four-day intervals. There was no change in lettuce growth after two times of plasma treatment for one week. The intermittent continuous experiment consisted of 30-minute, 60-minute, and 90-minute plasma treatment in 2 day intervals and 30-minute treatment a one-day; most of the Fusarium was inactivated only by treatment for 30-minute every two days. However, if inactivation under $10^1CFU/mL$ is required, it will be necessary to treat for 60 minutes in 2 day intervals. The plasma treatment caused no damage to the lettuce, except the 30 min plasma treatment ay the one-day interval. It was considered that the residual TRO concentration was higher than that of the other treatments.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.597-598
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.464-464
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• 2012

본 연구에서는 DBD (Dielectric Barrier Discharge)방식을 통해 발생된 대기압 plasma를 이용한 Photoresist (PR) Ashing에 관한 연구를 하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40 kHz AC 최대 인가 전압 15 kV를 사용 하였고(본 연구에서 인가 power는 30 KHz,전압 14 KV를 고정시킴) 플라즈마를 발생시 라디칼의 활성화를 유지하기 위해 전극 온도가 $180^{\circ}C$ 정하였다. Feeding 가스는 N2, 반응가스로는 CDA(Clean Dry Air), SF6와 CF4가스를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. CDA ratio의 경우에 질소대비 0.2%때 이송속도 30 mm/sec 1회 처리 기존 PR ashing은 최대 $320{\AA}$의 ashing 두께를 얻을 수 있었다. SF6와 CDA가스를 같이 반응하는 경우 ratio는 CDA : SF6 = 0.6% : 0.6%에서 PR ashing rate이 $841{\AA}/pass$의 값을 얻을 수 있었고, CDA가스만 첨가하는 경우보다 약2.6배 증가함을 관찰할 수 있었다. CF4 가스를 사용하는 경우 ratio는 CDA : CF4 = 0.2% : 0.2%에서 PR ashing rate이 $687{\AA}/pass$의 값을 얻을 수 있으며 CDA가스만 첨가하는 경우보다 약 2.1배 증가함을 관찰할 수 있었다. 그리고 PR ashing rate가 가스첨가종류와 비율에 따라서 변화함을 관찰하였고 최적조건을 찾기 위해 연구를 진행하였다. 추후 PR ashing rate가 향상을 하기 위해 가스혼합비율 및 stage 온도등 조건을 조절하여 공정최적조건을 얻기 위해 연구를 진행하였다.

• 환경생물
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• 제40권4호
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• pp.641-650
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• 2022

본 연구의 목적은 양식장 배출수 내에 포함된 5종의 항생제(tetracycline, doxycycline, oxytetracycline, clindamycin 및 erythromycin)를 제거하기 위해 사용한 수중 비열 유전체장벽 방전 플라즈마(Dielectric Barrier Discharge plasma, DBD plasma) 장치 안으로 공기와 산소를 각각 주입했을 때 항생제의 제거효율을 비교하는 것이다. DBD plasma를 발생시키기 위해서 주어진 전압은 27.8 kV이었고, 처리간격은 0, 0.5, 1, 2, 4, 8, 16 및 32분이었다. 3종의 tetracycline계 항생제는 공기를 주입했을 때는 4분만에 유의하게 감소하였고, 산소를 주입했을 때는 30초만에 유의성을 나타내었다. 32분째 공기와 산소를 각각 주입한 결과, tetracycline은 78.1%와 95.8%, doxycycline은 77.1%와 96.3% 그리고 oxytetracycline은 77.1%와 95.5% 감소하였다. Clindamycin은 공기를 주입했을 때 59.6%가 감소되었고, 산소는 83.0% 감소되었다. 또한, erythromycin은 공기주입 시 53.3%가 감소되었고 산소 주입 시 74.3%가 감소하여 두 항생제 모두 tetracycline계 항생제보다 낮은 제거 효율을 보였다. 결론적으로 수중 DBD plasma는 양식장 배출수 내에 포함된 5종의 항생제를 감소시킬 수 있고, 제거 효율은 공기보다 산소를 주입하는 것이 더 효과적이다.

• 동굴
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• 제76호
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.379-382
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• 2000

The characteristics of Xe discharge lamp(Mercuryless lamp) are described in this paper. In this paper, FFL is operated by sine wave and pulsed source. We apply V-Q Lissajous' figure for the discharge measurements of FFL which has the electrodes covered with dielectric. When FFL is operated by sine wave source, the characteristics are similar to DBD(Dielectric Barrier Discharge) and SD(Silent Discharge). And we compared the characteristics of FFL which is operated with sine wave and pulsed discharge by using V-Q Lissajous' figure method. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. As the duty ratio increases the electric field becomes strong and much more xenon ions are produced. And the number of metastable xenon atoms seem to increase, therefore, the phosphor radiation after the cut off of voltage increases compared with the first peak of radiation. Consequently, the 172㎚ radiation becomes strong as the duty ratio increases.