• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.31-32
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• 2013

• Journal of the Korean Society of Industry Convergence
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• v.23 no.4_2
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• pp.675-682
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• 2020

Multi-wire sawing is the prominent technology employed to cut hard material ingots into wafers. This paper aimed to research the effect of diamond toughness index on the cutting performance of electroplated diamond wire. Three different toughness index of diamond abrasives were used to manufacture electroplated diamond wires. The cutting performance of electroplated diamond wire is verified through experiments, in which sapphire ingot are cut using single wire sawing machine. A single wire saw for constant load slicing is developed for the cutting performance evaluation of electroplated diamond wire. Choosing the cutting depth, total cutting depth, cutting force and wear of electroplated diamond wires as evaluation parameters, the performance of electroplated diamond wire is evaluated. The results of this study showed that there was a significant direct relationship between the toughness index of diamond abrasives and the cutting performance. Results demonstrated that diamond abrasive with a high toughness index showed higher cutting performance. However, all diamond abrasives showed similar cutting performance under low load conditions. The results of this paper are useful for the development of cutting large diameter ingots and cutting high hardness ingots at high speed.

• Resources Recycling
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• v.22 no.2
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• pp.37-43
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• 2013

Unlike the conventional slurry type wire sawing, the diamond wire sawing method adopts diamond plated wire as sawing media instead of slurry consisted of both silicon carbide and oil. Wafering with diamond plated wire leaves solid element of the sludge mostly made up of silicon, and it is not difficult to recover 95% or more of silicon by a simple separation process of oil from the sludge. In this study, silicon was recovered from the sludge by drying process and organic and metal impurities were removed by sintering process. As result 3N grade silica was obtained successfully by thermal processing utilized the fact that the recovered silicon readily combines with oxygen due to fine particle size.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.1-11
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• 2018

Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.3
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• pp.66-71
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• 2016

Reducing the wafer breakage rate and sawing thinner wafers will decrease the cost of solar cells. This study was carried out in order to identify ways to achieve this goal. In this study, the cutting force characteristics using an ingot tilting-type diamond multi wire-sawing machine were analyzed. The cutting force was analyzed while varying the tilting angles and wire speed. The obtained data were analyzed by classifying the tangential cutting force and the normal cutting force. In this cutting force experiment, the difference between the forces was confirmed; it was found that it rises with increasing the tilting angles and decreases when the wire speed elevates. The resulting value can be utilized as basic data for the determination of an ideal cutting recipe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.