• 한국결정성장학회지
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• 제33권4호
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• pp.158-164
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• 2023

다이아몬드 결정구조가 갖는 의미와 결정형태의 조형적 아름다움을 새로운 관점에서 디자인하여 주얼리로 표현하고자 하였다. 본 연구에서는 다이아몬드의 결정구조에 대한 문헌 조사와 다이아몬드 결정구조의 조형적 특징을 모티브로 한 주얼리 디자인 사례를 분석하였다. 다이아몬드 결정구조의 의미와 가치를 새롭게 해석하고, 다이아몬드의 결정구조를 주얼리로 디자인함으로써 결정구조가 갖는 미적 효과를 나타낼 수 있는 조형적 디자인을 연구하였다. 다이아몬드 결정구조가 주는 대칭의 효과와 조형미가 주는 반복의 특징을 살려 주얼리 디자인을 제시함으로써 보석이 주는 근원적인 아름다움, 문화적 의미가 새롭게 재인식되길 기대해 본다.

• 열처리공학회지
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• 제33권1호
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• 열처리공학회지
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• 제33권3호
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• 대한기계학회논문집
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• 제17권1호
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• pp.120-130
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• 1993

본 연구에서는 니켈의 가공시 나타나는 공구의 마멸에 대한 정량화 및 절삭변 수와의 연관성에 대한 연구는 그 자체가 마멸에 대한 데이터 베이스 측면에서 중요하 고, 이러한 접근방법으로는 연구가 거의 이루어지지 않았다는 측면에서도 큰 의미를 갖는다. 본 연구는 특히 경도가 큰 공구인 CBN, 소결 다이아몬드(poly crystal dia- mond 이하 PCD), 단결정 다이아몬드(single crystal diamond 이하 SCD)공구를 사용하 여 니켈의 절삭에서 나타나는 공구의 마멸에 대한 분석을 선행한 후 수집한 정보로부 터 절삭속도, 이송, 절삭깊이 및 공구의 nose반경이 공구의 마멸 및 표면의 성상(su- rface quality)에 미치는 영향에 대하여 고찰하였고 절삭조건의 변화에 따라 마멸에 대한 예상 곡선을 구하였다.

• 한국광물학회지
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• 제10권1호
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• pp.18-32
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• 1997

Analysis of geological data, relating to occurrence and formation of diamonds as well as host rocks, inclined author to have different outlook on the diamond genesis and to establish a proposition on their formation at pneumatolytic-hydrothermal conditions near superficial Earth zones. Based on that theoretical foundations and experimental works, the first low-pressure and low-temperature hydrothermal diamond synthesis from water solution in pressure autoclave was executed. As a result, the natural diamond seed crystal grew bigger ad coupling of the synthetic diamond single-crystalline grains were obtained. SEM documentation proofs that parallely paragenetic crystallization of quartz and diamond, and nucleation of new octahedral diamond crystals brush take place on the seed crystal surface. Forecast of none times growth of diamond industrial application at 2000 and seventeen times at 2010 with reference to 1995, needs technology of large and pure single-crystals diamond synthesis. Growth of the stable and destressed diamond single-crystals in the pseudo-metastable diamond plot, may be realized with processes going through the long time and with participation of free radicals catalysts admixtures only. Sol-gel colloidal processes are an example of environment which form stable crystals in thermodynamically unstable conditions through a long time. Paper critically discusses a whole way of studies on the diamond synthesis, from high-pressure and high-temperature processes through chemical vapour deposition up to hydrothermal experiments.

• 한국생산제조학회지
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• 제7권5호
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• pp.127-133
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• 1998

This research intends to gain the sight for the qualitative characteristics of precision cutting by using the CNC lathe with a mono-crystal diamond(MCD) and a poly-crystal diamond(PCD) tool on the cutting distance. In case of an MCD tool, as the cutting distance increases, the surface roughness becomes worse and the standard deviation of surface roughness is small. In case of a PCD tool, as the cutting distance increases, the surface roughness becomes stable with a large standard deviation. The cutting force ratio(Ft/Fn) decreases as the nose radius increases and the decreasing ratio becomes larger for small nose radius.

• 한국정밀공학회지
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• 제10권1호
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• pp.147-152
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• 1993

The lapping characteristics of single crystal diamond are studied by considering the crystallographic anisotropy. It is introduced for lapping method to identify crystallographic orientantion by the X-ray diffraction and to measure lapping force ratio, lapping temperature and lapping wear. Diamound bonded wheels are used for lapping under dry condition. On the lapping {110} and {100} planes, it shows remarkable crystallographic anistropy. The lapping force ratio, temperature and wear become gerater with sliding direction along the <100> than along <110>. The results also show that the wear of diamond is influenced by mechanical work(tangential lapping force * lapping distance) as well by lapping speed.

• 열처리공학회지
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• 제34권2호
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• 대한기계학회논문집A
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• 제33권7호
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• pp.621-628
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• 2009

Nickel-phosphorus alloys are attractive materials for diamond turning applications such as fabrication of large optics and other high precision parts. It is also well-known that the higher phosphorus content of the alloys minimizes the diamond tool wear. Due to the weakness of electoless nickel plating that the phosphorus contents is limited to 13-14% (wgt), increased attention has been paid at electro-nickel plating which enables the alloys with 15-16% phosphorus. In this study, experiments were carried out to observe the wear characteristic of single crystal diamond tools in micro-grooving of electro-nickel plated drums. The experiments shows that long distance (50km) machining of micro-grooving on electro-nickel plated drum is possible with a single crystal diamond tool without any significant tool wear and defective machined surface.

• 한국결정성장학회지
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• 제14권1호
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• pp.6-11
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• 2004

Bias 인가된 hot filament CVD 방법을 이용해 티타늄을 RF sputtering 법으로 고속도강에 피복하여 중간 층으로 한 후 다이아몬드 박막을 피복할 때 bias 전압의 영향과 계면 층의 특성을 조사하였다. 다이아몬드 증착 시 bias가 인가될 경우 필라멘트에서 전자 방출이 촉진되어 다이아몬드 핵생성과 성장을 촉진시켰으며 본 실험에서의 최적 증착 조건은 증착 압력 20 torr, bias 인가전압 200V, 기판온도 $700^{\circ}C$로 나타났다. 강에의 다이아몬드 박막 형성 시 중간 층으로서의 티타늄은 Fe 및 C에 대한 확산도가 높고 탄화물 형성 원소이므로 다이아몬드 핵생성 및 성장에 적합한 원소로 나타났다.