• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.115-127
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.116.1-116.1
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• 2017

본 연구는 PVD와 CVD를 동시에 사용한 하이브리드 공정시스템을 이용하여 Ti를 도핑한 Diamond-like carbon(DLC) 코팅 전극의 특성 분석에 대한 내용을 다루고 있다. DLC는 높은 경도, 낮은 마찰 계수, 화학적 안정성 등의 좋은 기계적 물성을 가지고 있어 주로 내마모성이 요구되는 분야에 주로 적용되어 왔다. 또한 DLC는 넓은 전위창 및 낮은 백그라운드 전류 등의 전기화학적 특성을 가지고 있어 최근 전극용으로 전도유망한 소재로 주목받고 있지만, 높은 비저항과 낮은 접착력은 여전히 극복해야할 문제로 남아있다. 본 연구에서는 Plasma enhanced chemical vapor deposition (PECVD) 법과 High power impulse magnetron sputtering (HiPIMS) 기법을 동시에 사용하여 Ti/TiC 하지층과 그 위에 Ti-DLC 막을 증착하였고, Ti 함량에 따른 DLC 박막의 특성변화를 살펴보았다. PVD/CVD 하이브리드 증착법에 의한 하지층은 DLC막과 기판사이의 밀착력을 향상시켰고, 기존 PECVD법과 비교하였을 때 하이브리드 증착법은 DLC 박막의 증착률을 크게 증가시켰다. DLC 박막에 소량의 Ti가 들어가면 C-C $sp^2$ 구조가 증가하여 전기적, 전기화학적 특성이 향상되었고, Ti의 함량이 일정 이상 증가하면 TiC의 영향을 받아 전기적, 전기화학적 특성이 나빠지는 것을 알 수 있었다. 본 연구에서는 DLC를 전극으로 활용하기 위해 전기적 및 전기화학적 특성을 향상시키는 연구에 집중하였지만, 산업에 활용하기 위해서 기계적 물성향상과 수명에 관한 추가적인 연구가 이루어 진다면 DLC 전극 분야 발전에 많은 기여를 할 수 있을 것이라 생각한다.

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.2
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• pp.84-88
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• 2002

Dating and dosimetry using electron spin resonance (ESR) in 20th Century developed at both Yamaguchi University and Osaka University have been reviewed with emphasis on new prospects and strategies in 21th century. Natural radiation have been generating radicals that accumulated in archaeological and geological materials. ESR detects these radicals and the ESR signal intensity is proportional to the radiation dose and therefore the age. The assessment of the total dose of natural radiation and the annual dose rate give their ESR ages. The ESR dating of stalactites and stalagmites ant Akiyoshi cave in Yamaguchi prefecture in 1975 was extended to anthropological dating using bones and tooth enamel excavated in Greek Petralona cave. Fossils of shells and corals gave the ages of marine terraces and sea-level changes. Quartz grains gave the ages of geothermal alteration and fault movements. Future ESR dating of ices at outer planets anf their satellite are also investigated as basic studies for ices od $H_2O,\;CO_2,\;SO_2$ as well as terrestrial hydrates in laboratory. Atomic bomb radiation dosimetry at Hiroshima and Nagasaki using ESR lead to the dosimetry of personnel, Chemobyl and JCO criticality accidents. Monitoring of radiation dose with sensitive materials with tissue equivalence are being developed. finally a new scanning ESR imaging apparatus (a near field microwave microscope) developed in our laboratory gave ESR images of Radicals from fossils to Si-CVD and diamond films as summarized in my book in 2002.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.346-352
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• 1999

Diamond-like carbon (DLC) lims were deposited by using end hall type ion gun. Benzene gas was used for the generation of carbon ions. In order to systematically control the ion energy, we applied to the substrate DC, pulsed DC or 250 kHz medium frequency bias voltage, DLC films of superior mechanical properties of hardness 39$\pm$4 GPa and elastic mudulus 290$\pm$50GPa (2 to 6 times better than those of the films deposited by plasma assisted CVD method) could be obtained. Deposition rate was much higher than when using Kaufman type ion source, which results from higher ion beam current of end hall type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type but intimately related with the magnitude of the bias voltage. With increasing the negative bias voltage, the structure of the films changed to graphitic one resulting in decreased content of three dimensional inter-links. Degradation of the mechanical properties with increasing bias voltage could be thus understood in terms of the content odf three dimensional inter-links.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.165-171
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• 1999

Diamond-like carbon(DLC) films were synthesized using the rf-plasma CVD technique with the addition of small amounts of nitrogen and oxygen to a gas mixture of $CH_4$ and $H_2$. The gas flow ratio of $CH_4$ to $H_2$ was 2.4:1, and 3% , 13.6% of nitrogen were added to the gas mixture of $CH_4$ and $H_2$ for the deposition of DLC films. The film stress tended to decrease as the nitrogen concentration increased from 3% to 13.6%, probably due to the decrease of the number of the interlink between carbon atoms. The residual stress tended to slightly decrease when 3% of oxygen was added. Scratch tests were performed to investigate the adhesion between the DLC films and the Ti intelayer after pretreating the TiN surface with direct hydrogen plasma. The adhesion was enhanced by adding nitrogen and oxygen to the $CH_4$ and $H_2$ gas mixture. The adhesion for the 3% nitrogen addition was better than that for the 13.6% nitrogen addition. The Vicker's hardness of the DLC films was measured to be 1100Hv.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.255-259
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• 2022

In this study, we fabricated ZnS substrates with excellent transmittance in the mid-infrared region (3-5 ㎛) using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon (DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance efficiency. To reduce the reflectance and further improve transmittance in the mid-infrared region, anti-reflection (AR) coating was designed for DLC/ZnS /AR and AR/ ZnS /AR structures. The coating structure, microstructure, and optical properties of the AR-coated ZnS substrates were subsequently investigated by employing energy dispersive X-ray spectroscopy, scanning electron microscopy, and Fourier-transform infrared (FTIR) spectroscopy. The FTIR spectroscopy results demonstrated that, in the mid-infrared region, the average transmittance of the samples with AR coating on one and both sides increased by approximately 18% and 27%, respectively. Thus, AR coating improved the transmittance of the ZnS substrates.