• Journal of Bio-Environment Control
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• v.29 no.2
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• pp.105-109
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• 2020

This study was conducted to the improvement of solar light-based artificial light supply system and effect of lettuce cultivation. The artificial light supply system was consisted of units such as light source, power, system measurement and controller. The light source supply was composed of a solar transmitter and an LED lamp. The power supply consisted of an leakage breaker, SMPS, LED controller and relay. The solar transmitter was made of a quartz optical fiber with optimal light transmission. Artificial light used white lamp among LEDs. System measurement and control consisted of touch screen, Zigbee communication module and light quantity sensor. The results of test confirmed that the LED light is automatically activated when the intensity measured by the light intensity sensor is 200 μmolm^-2s^-1 or less. Moreover, the leaf length, root length, chlorophyll content and root fresh weight of optical fiber treatment was hight than LED lamp treatment. Therefore, it can be inferred that the energy-saving solar light collector device can be effective in the indoor lettuce production. However, the use of LED lamp is also recommended to assure the availability of sufficient sunlight in cloudy and rainy days.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korean Society of Radiology
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• v.13 no.2
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• pp.153-158
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• 2019

The purpose of this study is to compare and analyse the differences between a customized small finger made by 3D printing technology, a real small finger, and the other made from plaster of an orthotic company. The areas and the volumes of each cross-section were measured by Computer tomography(CT) and a 3D scanner and analysis of variance was performed to find out the differences of each shape. The areas of the point of 15.69mm, Distal Interphalangel Joints, were measured 30 times respectively using the caliper toll function of Picture Archiving Communication System(PASC) program. The volumes were measured by Configure Units of Meshmixer Program. There was no significant difference in the areas between three of them and there was 0.2 mm gap in the volume, which was more than the significance probability. Therefore, the result of this study shows the availability of finger orthoses made by 3D printing technology in the medical field.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.9
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• pp.1266-1271
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• 2022

Cats have strong wildness so they have a characteristic of hiding diseases well. The disease may have already worsened when the guardian finds out that the cat has a disease. It will be of great help in treating the cat's disease if the owner can recognize the cat's polydipsia, polyuria, and frequent urination more quickly. In this paper, 1) Efficient version of DeepLabCut for pose estimation, 2) YOLO v4 for object detection, 3) LSTM is used for behavior prediction, and 4) BoT-SORT is used for object tracking running on an artificial intelligence device. Using artificial intelligence technology, it predicts the cat's next, polyuria and frequency of urination through the analysis of the cat's behavior pattern from the home CCTV video and the weight sensor of the water bowl. And, through analysis of cat behavior patterns, we propose an application that reports disease prediction and abnormal behavior to the guardian and delivers it to the guardian's mobile and the server system.

• Journal of Advanced Navigation Technology
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• v.16 no.6
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• pp.927-934
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• 2012

In this paper, we present relative positioning algorithm for moving land vehicle using GPS, MEMS IMU and B-CDMA module. This algorithm does not calculate precise absolute position but calculates relative position directly, so additional infrastructure and I2V communication device are not required. Proposed algorithm has several steps. Firstly, unbiased relative position is calculated using pseudorange difference between two vehicles. Simultaneously, the algorithm estimates position of each vehicle using GPS/INS integration. Secondly, proposed algorithm performs filtering and finally estimates relative position and relative velocity. Using proposed algorithm, we can obtain more precise relative position for moving land vehicles with short time interval as IMU sensor has. The simulation is performed to evaluate this algorithm and the several field tests are performed with real time program and miniature vehicles for verifying performance of proposed algorithm.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.146-150
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• 2002

1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.100-108
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• 2018

This paper describes a design of scalable RSA public-key cryptography processor supporting four key lengths of 512/1,024/2,048/3,072 bits. The modular multiplier that is a core arithmetic block for RSA crypto-system was designed with 32-bit datapath, which is based on the CIOS (Coarsely Integrated Operand Scanning) Montgomery modular multiplication algorithm. The modular exponentiation was implemented by using L-R binary exponentiation algorithm. The scalable RSA crypto-processor was verified by FPGA implementation using Virtex-5 device, and it takes 456,051/3,496347/26,011,947/88,112,770 clock cycles for RSA computation for the key lengths of 512/1,024/2,048/3,072 bits. The RSA crypto-processor synthesized with a $0.18{\mu}m$ CMOS cell library occupies 10,672 gate equivalent (GE) and a memory bank of $6{\times}3,072$ bits. The estimated maximum clock frequency is 147 MHz, and the RSA decryption takes 3.1/23.8/177/599.4 msec for key lengths of 512/1,024/2,048/3,072 bits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.394-400
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• 2014

In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.