• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.95-98
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• 1997

A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

• Journal of Advanced Navigation Technology
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• v.24 no.2
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• pp.107-114
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• 2020

A power amplifier of 2.4 GHz ISM band is designed to implement a transmitter system. High efficiency amplifiers can be implemented as class E or class F amplifiers. This study has designed a 20 W high efficiency class E amplifier that has simple circuit structure in order to utilize for the ISM band application. The impedance matching circuit was designed by class E design theory and circuit simulation. The designed amplifier has the output power of 44.2 dBm and the power added efficiency of 69% at 2.45 GHz. In order to apply 30 dBm input power to the designed power amplifier, voltage controlled oscillator (VCO) and driving amplifier have been fabricated for the input feeding circuit. The measurement of the power amplifier shows 43.2 dBm output and 65% power added efficiency. This study can be applied to the design of power amplifiers for various wireless communication systems such as wireless power transfer, radio jamming device and high power transmitter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.475-485
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• 2010

This paper proposes a novel concept for a microstrip resonator that can function as a filter and as an antenna at the same time. The proposed structure consists of an outer ring, an open loop-type inner ring, a circular patch, and three ports. The frequencies where the proposed structure works as a filter and as an antenna, respectively, are determined primarily by the radius of the inner ring and the circular patch. The measured results show that, when the microstrip resonator operates as a filtering device, this filter has about 15.1 % bandwidth at the center frequency of 0.63 GHz and a minimum insertion loss of 1.5 dB within passband. There are three transmission zeros at 0.52 GHz, 1.14 GHz, and 2.22 GHz. In the upper stopband, cross coupling - taking place at the stub of the outer ring - and the open loop-type inner ring produce one transmission zero each. The circular patch generates the dual-mode property of the filter and another transmission zero, whose location can be easily adjusted by altering the size of the circular patch. The proposed structure works as an antenna at 2.7 GHz, showing a gain of 3.8 dBi. Compared to a conventional patch antenna, the proposed structure has a similar antenna gain. At the resonant frequencies of the filter and the antenna, high isolation(less than -25 dB) between the filter port and the antenna port can be obtained.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.2
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• pp.185-194
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• 2008

In this paper, an efficient technique is proposed to integrate the 3D user interface with the tiled display system in PC cluster environment. In the developed 3D user interface software, various menus are provided to increase the user friendliness of the interface, including the several model-control-commands. To eliminate the noise produced from the 3D user interface devices, the box filtering algorithm is employed. Further, a communication splitting algorithm, which is a kind of asynchronous communication method, is proposed to reduce the motion delay between the 3D interface and the tiled display system, and its efficiency is validated through the benchmarking tests.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.4
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• pp.820-828
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• 2017

Service of digital hologram that has been recognized as a visual system for next generation requires various signal processing technologies. A transform is the most frequently used tool among signal processing techniques for 2-dimensional(D) and 3-D natural picture. A digital hologram has totally different property with a natural picture, so it is rarely efficient to apply transform tools used in 2-D image processing to a digital hologram. To overcome this a Fresnelet transform for a digital hologram has been proposed. We derive a Fresnelet transform by using the Daubechie's filter after applying an unitary Fresnel transform to a wavelet basis function. We also implement the transform as types of device and kernel code to improve operational performance. In consideration of the average time that is required for a pixel we can have observed the performance is improved up to 242 and 30 times for using the (9,7) and (5,3) filters in case of using device code.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1295-1302
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• 2021

As the market size of 3D printers increases, the precision of the printout and the speed of operation by the motor are very important issues. In this parer, G-code of each output was generated using a CURA program to compare whether the output of the PLC equipment is the same as that of the Arduino CNC. And after conversion to NC File, a pen was attached to each device to output a result to A4 paper. As a result, the output time was measured to be 1m 39s for PLC equipment and 2m 5s for Arduino CNC. In addition, it was confirmed that the 2D output was equally from the two equipments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.12
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• pp.1574-1580
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• 2020

Traditional pose estimation methods include using special devices or images through image processing. The disadvantage of using a device is that the environment in which the device can be used is limited and costly. The use of cameras and image processing has the advantage of reducing environmental constraints and costs, but the performance is lower. CNN(Convolutional Neural Networks) were studied for pose estimation just using only camera without these disadvantage. Various techniques were proposed to increase cognitive performance. In this paper, the effect of the skip connection on the network was experimented by using various skip connections on the joint recognition of the hand. Experiments have confirmed that the presence of additional skip connections other than the basic skip connections has a better effect on performance, but the network with downward skip connections is the best performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.