• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.250-256
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• 2017

A graphene electrode with a novel in-plane structure is proposed and successfully adopted for use in supercapacitor applications. The in-plane structure allows electrolyte ions to interact with all the graphene layers in the electrode, thereby maximizing the utilization of the electrochemical surface area. This novel structure contrasts with the conventional out-of-plane stacked structure of such supercapacitors. We herein compare the volumetric capacitances of in-plane- and out-of-plane-structured devices with reduced multi-layer graphene oxide films as electrodes. The in-plane-structured device exhibits a capacitance 2.5 times higher (i.e., $327F\;cm^{-3}$) than that of the out-of-plane-structured device, in addition to an energy density of $11.4mWh\;cm^{-3}$, which is higher than that of lithium-ion thin-film batteries and is the highest among in-plane-structured ultra-small graphene-based supercapacitors reported to date. Therefore, this study demonstrates the potential of in-plane-structured supercapacitors with high volumetric performances as ultra-small energy storage devices.

• International Journal of CAD/CAM
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• v.6 no.1
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• pp.183-192
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• 2006

A CAD/CAM system has been developed for rapid prototyping (RP) of microfluidic devices based on excimer laser micromachining. The system comprises of two complementary softwares. One, the CAM tool, creates part programs from CAD models. The other, the Simulator Tool, uses a part program to generate the laser tool path and the 2D and 3D graphical representation of the machined microstructure. The CAM tool's algorithms use the 3D geometry of a microstructure, defined as an STL file exported from a CAD system, and process parameters (laser fluence, pulse repetition frequency, number of shots per area, wall angle), to automatically generate Numerical Control (NC) part programs for the machine controller. The performance of the system has been verified and demonstrated by machining a particle transportation device. The CAM tool simplifies part programming and replaces the tedious trial-and-error approach to creating programs. The simulator tool accepts manual or computer generated part programs, and displays the tool path and the machined structure. This enables error checking and editing of the program before machining, and development of programs for complex microstructures. Combined, the tools provide a user-friendly CAD/CAM system environment for rapid prototyping of microfluidic devices.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.661-665
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• 2022

The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S₁₁, S₂₂, S₂₁, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 10¹⁵ protons/cm². The maximum degradation quantities of the gain S₂₁ and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S₂₁ and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3277-3285
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• 1996

In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.154-160
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• 2005

Microwave Otters are essential device in modem wireless systems. A compact dimension BPF(Band-pass Filter) for IEEE 802.11a WLAN service is realized using LTCC multi-layer process. To extrude 2-stage band-pass equivalent circuit, band-pass and J-inverter transform applied to Chebyshev low-pass prototype filter. Because parallel L-C resonator is complicate and hard to control the inductor characteristics in high frequency, the shorted $\lambda/4$ stripline is selected for the resonator structure. The passive element is located in the different layers connected by conventional via structure and isolated by inner GND. The dimension of fabricated stacked band-pass filter which is composed of six layers, is $2.51\times2.27\times1.02\;mm^3$. The measured filter characteristics show the insertion loss of -2.25 dB, half-power bandwidth of 220 MHz, attenuation at 5.7 GHz of -32.25 dB and group delay of 0.9 ns at 5.25 GHz.

• Journal of the Korean Physical Society
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• v.80
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• pp.516-525
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• 2022

This study is to assess the clinical use of commercial PerFRACTION^TM for patient-specific quality assurance of volumetric-modulated arc therapy. Forty-six pretreatment verification plans for patients treated using a TrueBeam STx linear accelerator for lesions in various treatment sites such as brain, head and neck (H&N), prostate, and lung were included in this study. All pretreatment verification plans were generated using the Eclipse treatment planning system (TPS). Dose distributions obtained from electronic portal imaging device (EPID), ArcCHECK^TM, and two-dimensional (2D)/three-dimensional (3D) PerFRACTION^TM were then compared with the dose distribution calculated from the Eclipse TPS. In addition, the correlation between the plan complexity (the modulation complexity score and the leaf travel modulation complexity score) and the gamma passing rates (GPRs) of each quality assurance (QA) system was evaluated by calculating Spearman's rank correlation coefficient (r_s) with the corresponding p-values. The gamma passing rates of 46 patients analyzed with the 2D/3D PerFRACTION^TM using the 2%/2 mm and 3%/3 mm criteria showed almost similar trends to those analyzed with the Portal dose imaging prediction (PDIP) and ArcCHECK^TM except for those analyzed with ArcCHECK^TM using the 2%/2 mm criterion. Most of weak or moderate correlations between GPRs and plan complexity were observed for all QA systems. The trend of mean rs between GPRs using PDIP and 2D/3D PerFRACTION^TM for both criteria and plan complexity indices as in the GPRs analysis was significantly similar for brain, prostate, and lung cases with lower complexity compared to H&N case. Furthermore, the trend of mean rs for 2D/3D PerFRACTION^TM for H&N case with high complexity was similar to that of ArcCHECK^TM and slightly lower correlation was observed than that of PDIP. This work showed that the performance of 2D/3D PerFRACTION^TM for pretreatment patient-specific QA was almost comparable to that of PDIP, although there was small difference from ArcCHECK^TM for some cases. Thus, we found that the PerFRACTION^TM is a suitable QA system for pretreatment patient-specific QA in a variety of treatment sites.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.2041-2044
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• 2004

A pyroelectric sensor using $PbTiO_3$/P(VDF/TrFE) nanocomposites thin film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity D of the device were 1.30 ${\times}$ $10^{-8}$W and 1.53 ${\times}$ $10^7$cm /W respectively under emission energy of 13 ${\mu}$W/c$m^2$ respectively. This result shows a better characteristic than the other commercial pyroelectric infrared sensors.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.502-508
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• 2011

In this paper, we proposed vertical feeding mechanism for a slide parts feeder using the slide type method. This parts feeder of the slide type method have been proposed to suppress the dust generation from the feeding objects. The proposed parts feeder mechanism is composed with the casing hopper, the vertical feeding unit, the in-line feeder and linear shooter unit. And, these mechanisms did modularity through optimum design by means of mechanical and dynamical analysis using the RecurDyn(multi-body dynamics) analysis module. Also were carried out the virtual prototype using the 3-D CAD program. And it had been manufactured as the prototype of the slide parts feeder. The field test for validation of performance was performed directly at the inspection line of bolt and screw. In the field test, this slide parts feeder showed an efficiency of about 1.2 times the bowl feeder. It also showed an epoch reduction in the dust generation compared to the vibration bowl feeder. So this slide parts feeder will be applied useful in the vision inspection system for a screw and bolt.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.661-665
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.