• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.9
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• pp.1727-1732
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• 2011

In order to realize a high performance(low loss, high isolation) microwave power divider/combiner, we have designed the power combiner/divider precisely in accordance with the different hight of central part. In the case of the high central part of the hight of $h_r$=10.2, a compensating part of the conical line is inserted in the conical conversion transmission line, and in the case of low central part of the hight of $h_r$=5.0, the conical conversion transmission line is remodeled into the 2-stage bend structure. In both case, the reflection characteristics are improved to 30dB over the operating frequency range of 5GHz bandwidth. A resistance is inserted between the peripheral ports so as to try to improve the isolation characteristics of the device. For the 16-divider/combiner, the isolation characteristics are improved to 10dB over the operating frequency range of 5GHz bandwidth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.132-132
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• 2009

A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

• Journal of Information Display
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• v.10 no.3
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• pp.107-110
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• 2009

Efficient deep-blue organic light-emitting diodes were demonstrated using 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl doped in double-emission layers (D-EMLs). The D-EML system, which consists of 2-methyl-9,10-di(2-naphthyl)anthracene and 1,4-(dinaphthalen-2-yl)-naphthalene as blue hosts, was employed to broaden the recombination zone and to ensure the good confinement of the holes and electrons. The optimized device showed a peak current efficiency of 4.47 cd/A, a peak external quantum efficiency of 4.09%, and Commission Internationale de L'Eclairage coordinates of (0.16, 0.10).

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• Explosives and Blasting
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• v.42 no.3
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• pp.38-48
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• 2024

This study is to evaluate the applicability of high-speed, high-pressure dynamic compression technology for the powder molding of talc. To achieve this, powder molding test was conducted using a self-developed high-speed, high-pressure dynamic compression device, and the results were analyzed. Additionally, the behavior characteristics of pyrophyllite powder particles under dynamic compression were analyzed using the PFC2D. Quantitative analyses, as well as mapping and point analyses, were conducted using the SEM on pyrophyllite from the Naju ceramic Mine and the Bugok mine. The results showed that the weight ratio of composed elements in both mines was in the order of oxygen > silicon > aluminum. A pyrophyllite powder solid with a diameter of 14.5 mm and a thickness of 3 mm was successfully produced using a high-speed, high-pressure dynamic compression device capable of generating an instantaneous compressive force with a 30 kgf projectile dropped from a height of 1.5 m in about 0.4 seconds. Numerical analysis of pyrophyllite powder using PFC2D analyzed that in the numerical model, the compression ratio was approximately 56%, and the porosity decreased from 16.0% to 1.0%, indicating almost no remaining pores.

• Korean Journal of Agricultural and Forest Meteorology
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• v.13 no.2
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• pp.87-92
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• 2011

In order to better understand the role of litter layer on hydrological cycle in forest, we estimated the interception storage capacity of the litter layer at Gwangneung deciduous forest. We first made a thickness map of the litter layer at the study site based on field survey and then collected representative litter samples for the laboratory experiment. We constructed a measurement device consisting of sample tray, drain collector, tipping bucket, and a data logger. Using this device, we examined the relationship between the interception storage capacity ($C_i$) and the thickness (d) of the litter layer. For the range of d from 25 to 100 mm, there was a simple linear relationship between $C_i$ and d, which changed with the intensity of the simulated rain. The results were extrapolated to d smaller than 25 mm by considering that no interception occurs without litter layer. Overall, $C_i$ increased rapidly when d was low (< 25 mm) but the rate of increase decreased as d increased due to clumping. With an average thickness of 59 mm, the estimated $C_i$ at the site was 0.94 (${\pm}0.39$) mm. Such an interception storage capacity of the litter layer is comparable to that of the forest canopy, suggesting that the litter layer can play an important role in the forest water cycle.

• Journal of Korea Multimedia Society
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• v.25 no.2
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• pp.345-352
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• 2022

Conducting AI-based fusion business due to the increment of ICT fusion medical device has been expanded. In addition, AI-based medical devices help change existing medical system on treatment into the paradigm of customized treatment such as preliminary diagnosis and prevention. It will be generally promoted to the change of medical device industry. Although the current demand forecasting of medical biotechnology commercialization is based on the method of Delphi and AHP, there is a problem that it is difficult to have a generalization due to fluctuation results according to a pool of participants. Therefore, the purpose of the paper is to predict demand forecasting for identifying promising technology based on building up big data in medical biotechnology. The development method is to employ candidate technologies of keywords extracted from SCOPUS and to use word2vec for drawing analysis indicator, technological distance similarity, and recommended technological similarity of top-level items in order to achieve a reasonable result. In addition, the method builds up academic big data for 5 years (2016-2020) in order to commercialize technology excavation on demand perspective. Lastly, the paper employs global data studies in order to develop domestic and international demand for technology excavation in the medical biotechnology field.

• Asian-Australasian Journal of Animal Sciences
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• v.20 no.11
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• pp.1670-1676
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• 2007

Fifty repeat breeder (RB) Friesian cows were allocated to five groups of 10 cows each, to determine the effect of progesterone (P4) supplement on P4 concentrations and pregnancy rates during the periods of corpus luteum (CL) formation and development between days 2-7 and 7-12 following a spontaneous or $PGF_{2{\alpha}}$-induced estrus. Cows were artificially inseminated during $PGF_{2{\alpha}}$-induced (PGF-P4-d2 and PGF-P4-d7 groups) or spontaneous (S-P4-d2, S-P4-d7, and control groups) estrus. Progesterone-releasing intravaginal device (PRID) devoid of estrogen capsule were inserted either on d 2 (PGF-P4-d2 and S-P4-d2 groups) or d 7 (PGF-P4-d7 and S-P4-d7 groups) post-insemination and left in place for 5 days. Control cows did not receive any treatment. Blood samples were collected for progesterone analysis from all cows once daily for 4 days starting on the day of estrus (d 0) and once every 3 days thereafter until d 22. Progesterone treatment by day interaction accounted for higher plasma P4 in treated than non-treated control cows. Progesterone concentrations differed significantly (p<0.05) during metestrus (d 2 to d 7) but not during diestrus (d 7 to d 12). $PGF_{2{\alpha}}$ treatment, lactation number, service number or their interactions did not affect progesterone concentrations and pregnancy rates. Therefore, cows were grouped according to the day of P4 supplement irrespective of the $PGF_{2{\alpha}}$ treatment. Progesterone supplement on d 7 but not d 2 significantly increased (p<0.03) pregnancy rates in repeat breeding cows with four or more previous services but not in cows in their third service. In conclusion, post-insemination P4 supplement to repeat breeding cows with four or more previous services improved pregnancy rates and should be advocated when no specific reason for infertility is diagnosed. Further studies with larger numbers of repeat breeding cows under field conditions are needed to ascertain the findings of this study.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.3
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• pp.164-168
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• 2016

A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.