• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.228-237
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• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.5
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• pp.497-503
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• 2014

Minimally invasive intramedullary nail insertion or plate osteosynthesis has shown good results for the treatment of long bone fractures. However, directly seeing the fracture site is impossible; surgeons can only confirm bone fragments through a fluoroscopic imaging system. The narrow field of view of the equipment causes malalignment of the fracture reduction, and radiation exposure to medical staff is inevitable. This paper suggests two methods to solve these problems: surgical navigation using 3D models reconstructed from computed tomography (CT) images to show the real positions of bone fragments and estimating the rotational angle of proximal bone fragments from 2D fluoroscopic images. The suggested methods were implemented using open-source code or software and evaluated using a model bone. The registration error was about 2 mm with surgical navigation, and the rotation estimation software could discern differences of $2.5^{\circ}$ within a range of $15^{\circ}$ through a comparison with the image of a normal bone.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.89-101
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• 2005

Among many material processing related issues for successful scaling down of devices for the next 10 years or so, the advanced gate stack and interconnect technology are two most critical research areas, which need technical innovation. The introduction of new metallic films and appropriate processing technologies are required more than ever. Especially, as the device downscaling continues well into sub 50 nm regime, the paradigm for metal nano film deposition technique research has been shifted to high conformality, low growth temperature, high quality with uniformity at large area wafers. Regarding these, ALD has sparked a lot of interests for a number of reasons. The process is intrinsically atomic in nature, resulting in the controlled deposition of films in sub-monolayer units with excellent conformality. In this paper, the overview on the current issues and the future trends in device processing technologies related to metal nano films as well as the R&D trends in these applications will be discussed. The focus will be on the applications for metal gate, capacitor electrode for DRAM, and diffusion barriers/seed layers for Cu interconnect technology.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.545-548
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• 1998

Thin film SOI(Silicon-On-Insulator) devices exhibit floating body effect. In this paper, SOI NMOSFET is proposed to solve this problem. Some part of gate oxide was considered to be 30nm~80nm thicker than the other normal gate oxide and simulated with TSUPREM-4. The I-V characteristics were simulated with 2D MEDICI mesh. Since part of gate oxide has different oxide thickness in proposed device, the gate electric field strength is not the same throught the gate and consequently the reduction of current kink effect is occurred.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.182-185
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• 2002

A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.2
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• pp.119-132
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• 1990

To design protection coordination for an electric power distribution system, an expert system is developed, using both the veteran expert's heuristics and the guide book for the distribution facility operation considering feeder configuration, service route, load characteristics fault current and load current. The expert system developed in this papaer determines the type of protective device(clearing current and sequence). The location and rating change of protective device in the old feeder is realized by using old database. Current(T-C) curves of various kinds of protective devices are stored in Knowledge Base (KB). The expert system is developed on a 32 bit personal computer using PROLOG, AutoCAD,dBASEIIIPLUS and FORTRAN. To compute the fault current and loadflow, FORTRAN is used.

• Journal of the Korean Graphic Arts Communication Society
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• v.19 no.2
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• pp.58-67
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• 2001

Gamut mapping is a technique that acts on cross-media color reproduction to transform a color between devices for the purpose of enhancing the appearance or preserving the appearance of an image. Gamut mapping essentially produces color conversion error which depends the gamut mapping method, source and destination devices, and sample points for gamut modeling. For color space conversion between monitor colors and printer colors, empirical representation using sample measurements is currently widely utilized. Color samples are uniformly selected in the device space such as CMY or RGB, represented as color patches, and then measured. However, in the case of printer, these color samples are not evenly distributed inside the printer gamut and the color conversion error is increased. Accordingly, this paper introduces a equally distributed color sampling method in CIELAB space, a device- independent color space, to reduce color conversion error, and the performance is analyzed via color space conversion experiments using tetrahedral interpolation.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.37-39
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• 1998

The hybrid step motor has found applications in a wide range of mechanical systems as a low cost, open-loop positioning device. The step motor provides good stiffness at rest against disturbing load influences, a combination of moderate speed fine resolution, high reliability and simplicity. In recent years, considerable competition has arisen over the technological issue of wheather the device should be applied as a 2-Phase or 5-Phase machine. In this paper, to compare two systems, we have atempted to derive the mathematical. model, and analysed operating detent torque with this model. The analysis shows that a fundamental component of the permeance distribution produces the average torque and that harmonic components produce the ripple torque.