• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.133-133
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• 2010

We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of $10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of $10^{15}cm^{-3}$. In addition to that, the study of changing phosphorus doping of $10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of $10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Applied Microscopy
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• v.45 no.2
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• pp.95-100
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• 2015

The in-situ heating transmission electron microscopy experiment allows us to observe the time- and temperature-dependent dynamic processes in nanoscale materials by examining the same specimen. The temperature, which is a major experimental parameter, must be measured accurately during in-situ heating experiments. Therefore, calibrating the thermocouple readout of the heating holder prior to the experiment is essential. The calibration can be performed using reference materials whose phase-transformation (melting, oxidation, reduction, etc.) temperatures are well-established. In this study, the calibration experiment was performed with four reference materials, i.e., pure Sn, Al-95 wt%Zn eutectic alloy, NiO/carbon nanotube composite, and pure Al, and the calibration curve and formula were obtained. The thermocouple readout of the holder used in this study provided a reliable temperature value with a relative error of <4%.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• Advances in aircraft and spacecraft science
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• v.2 no.3
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• pp.329-343
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• 2015

This study aimed to observe the effect of a novel concept (referred to as the flap extension) implemented on the leading edge of the flap of a three element high lift device. The high lift device, consisting of a flap, main element and slat is designed around an Airbus research profile for sufficient take off and landing performance of a large commercial aircraft. The concept is realised on the profile and numerically optimised to achieve an optimum geometry. Two different optimisation approaches based on Genetic Algorithm optimisations are used: a zero order approach which makes simplifying assumptions to achieve an optimised solution: as well as a direct approach which employs an optimisation in ANSYS DesignXplorer using RANS calculations. Both methods converge to different optimised solutions due to simplifying assumptions. The solution to the zero order optimisation showed a decreased stall angle and decreased maximum lift coefficient against angle of attack due to early stall onset at the flap. The DesignXplorer optimised solution matched that of the baseline solution very closely. The concept was seen to increase lift locally at the flap for both optimisation methods.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.110-119
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• 2007

A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (${\phi}_c$) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (${\phi}_s$). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.9-15
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• 2022

Discarded bio-wastes, such as seeds and rinds, cause environmental problems. Multiple studies have recycled bio-wastes as eco-friendly energy sources to solve these problems. This study uses bio-waste to fabricate a mandarin peel powder based triboelectric nanogenerator (MPP-TENG). The MPP-TENG is based on the contact separation mode. It generates an open-circuit voltage and short-circuit current of 156V and 2µA, respectively. In addition, MPP-TENG shows stable operation over continuous 3000s without any deviation in output. Also, the device exhibits maximum power density of 5.3㎼/cm² when connected to a resistance of 100MΩ. In an energy storage capacity test for 1000s, the MPP-TENG stores an energy of 171.6µJ in a 4.7µF capacitor. The MPP-TENG can power 9 blue LEDs and 54 green lettering LEDs. These results confirm that the MPP-TENG can provide a new avenue for eco-friendly energy harvesting device fabrication.

• Nuclear Engineering and Technology
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• v.52 no.4
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• pp.827-834
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• 2020

Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 10¹⁵ cm^-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E^-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

• 제어로봇시스템학회:학술대회논문집
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• 1997.10a
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• pp.40-43
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• 1997

This paper presents a 3D object recognition method for generation of 3D environmental map or obstacle recognition of mobile robots. An active light source projects a stripe pattern of light onto the object surface, while the camera observes the projected pattern from its offset point. The system consists of a laser unit and a camera on a pan/tilt device. The line segment in 2D camera image implies an object surface plane. The scaling, filtering, edge extraction, object extraction and line thinning are used for the enhancement of the light stripe image. We can get faithful depth informations of the object surface from the line segment interpretation. The performance of the proposed method has demonstrated in detail through the experiments for varies type objects. Experimental results show that the method has a good position accuracy, effectively eliminates optical noises in the image, greatly reduces memory requirement, and also greatly cut down the image processing time for the 3D object recognition compared to the conventional object recognition.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.998-1001
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• 2006

Highly stable organic electroluminescent devices have been achieved by treatment of thermal and electrical annealing. We investigate here the performance of theses devices at temperatures and pulse aging. We also demonstrate improved device stability due to thermal and electrical treatment, and the brightness decays at no treatment, thermal only, electrical only and thermal/electrical treatment were 86.6%, 89.5%, 93.0%, and 96.7%, respectively, in the after 150 h of operation driven with an initial luminance of $1,000\;cd/m^2$.