• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Design & Manufacturing
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• v.14 no.2
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• pp.34-41
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• 2020

Typical characteristics of medical device parts are that they can not be reused and there are many disposable products. Therefore, there is a need for an injection molding machine having excellent repeatability of molding conditions and a precision injection mold for mass production. Recently, the performance of an injection machine has made a remarkable evolution compared to the past. However, defects such as short-shot, flash, weld line, gas burning, warpage, and deformation, which are typical defects, still do not disappear at all. This is due to the lack of gas ventilation from the product cavities, even if the gas is smoothly vented from the sprue and runner of the mold. For this reason, the internal pressure of the cavity rises and is directly connected to the quality defects. In this study, an active gas vent system was designed to prevent defects due to trapped gas in the cavity. Since it can be easily adjustable in response to the molding conditions and the mold temperature changes, it is expected to improve productivity due to the reduction of the defective ratio.

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.233-236
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• 2006

A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $(1.5k\Omega-cm)\;65{\mu}m$ thick epi-layer, on a $550{\mu}m$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.101-104
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• 2002

Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.1
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• pp.330-338
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• 2024

In this paper, a Ka-band high-output active phased array antenna device applicable to small radars and seekers was designed, and the improved performance was studied. The radiation device assembly consists of 1x8 arrangements, and the step flared notch antenna type. It shows low active reflection loss characteristics in broadband, and low loss characteristics by applying the air-strip feeding structure, and is designed to enable beam steering up to 45 degrees. The TRM(transmit receive module) output power is more than 2.0W per channel using GaN HPA in the transmitting path, and satisfies more than 25.0 dB gain and less than 6.0 dB noise figure in the receiving path. Accordingly, the Effective Isotropically Radiated Power(EIRP) of the antenna unit shows the performance of 0.00 dB or more and the receive gain-to-noise temperature ratio(G/T) of 0.00 dB/k or more. For demonstration, we have designed aforementioned planar array antenna which consists of 64 radiating elements having a size within 130 mm x 130 mm x 300 mm and weight of less than 4.9 kg..

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.528-530
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• 2003

We present a novel photo-addressable electronic paper using an electrophoretic device, which can show and sustain the 2D images transferred by the UV illumination. The device consists of the organic photoconducting layer reacting with the UV illumination and the electronic ink (white particles and blue dye) dispersing in a suspending medium. The voltage impression under illuminating of UV make an image be transferred to the electrophoretic cell. The transferred image can be maintained by the bistability of the electrophoretic device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.362-365
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• 2002

This paper, experiment manufactures device of Metal/Poly-${\gamma}$ Benzyl $_D$-GlutamateOrganic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Permittivity of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.25-32
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• 2021

In this paper, the Magneto-Electric(ME) dipole array antenna with dual-polarization in the X-Band is proposed and it is implemented and measured. The proposed array antenna is composed of 32 single ME dipole antenna and a Teflon PCB. 1 × 1 ME dipole antenna is implemented dual-polarization by radiating vertical polarization and horizontal polarization from two pairs of radiators. 2-port feeding structures are realized by lamination process using LTCC. And, each port independently feeds the radiator through a Γ-shaped feeding strip with isolation between ports. The Teflon PCB used in the antenna array has a 4-layer structure, and 2-port is fed through the top and bottom layers. The λ_g/4 transformer is applied to the transmission line of the Teflon PCB for impedance matching of the arrayed antenna and the Teflon PCB, and the optimal parameters are obtained through simulation. The measured maximum antenna gains of port 1 was 18.2 dBi, Cross-pol was 1.0 dBi. And the measured maximum antenna gains of port 1 was 18.1 dBi, Cross-pol was 3.2 dBi.