• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.400-407
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• 1987

Thin film filter type 4-channel wavelength division multiplexing(WDM) device was designed and fabricated for the application in optical subscriber loop system. It has multi-mode fiber pigtails and four wavelength division consisting of 0.81, 0.89, 1.2 and 1.3 um. The evaluated performances are 1-2d B of insertion loss(connector loss excluded)and 30-35d B of crosstalk attenuation for all channels. The performance of the fabricated device was tested in the wideband optical transmission experiment, where the SNR degradation due to the crosstalk of the device was found to be within a measurement error.

• 재활복지
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• v.15 no.2
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• pp.147-173
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• 2011

The purpose of this study was to develop a stuttering therapy device to aid in stutter therapy. The research method used for this study was as follows: First, the stuttering therapy device based on analysis of the prolonged speech method used at home and abroad was designed to achieve the goal of research. Second, the stuttering therapy device was to be developed to maintain a vocalization state, to use bio-feedback visualization, to have enough inspiration, to use Korean language in this device, and to use transfer and maintenance training in daily life. Third, the stuttering therapy device effectiveness was to be verified through use in clinical cases. The results of subjects receiving speech therapy and using the breathing control prolonged speech device and SI(stuttering Interview) evaluation programs for 3 months were as follows: For subject A, the stuttered word rate was reduced from 3.20 SW/M to 0.5 SW/M. For subject B, the stuttered word rate was reduced from 1.90 SW/M to 0.75 SW/M. For subject C, the stuttered word rate was reduced from 3.37 SW/M to 0.34 SW/M. For Subject D, the stuttered word rate was reduced from 0.51 SW/M to 0 SW/M. Follow-up evaluations verified the effectiveness of how the stuttering therapy device can reduce subjects' SW/M.

• 한국전산유체공학회:학술대회논문집
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• 2005.04a
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• pp.114-118
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• 2005

CFD simulation was peformed for 2D and 3D flying and rotating frisbees. Multiple reference method(MRF) was utilized to consider the rotation of 3D model. Geometry change of 2D model shows dramatic increase of lift, but 3D simulation results for geometry change show decrease of lift and drag. Ground effect increases the lift of the frisbee being close to ground.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.4
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• pp.762-768
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• 2015

D2D communication as an underlaying LTE-Advanced network has proven to be efficient in improving the network performance and decreasing the traffic load of eNodeB(enhanced NodeB). However large amount of interference can be caused by sharing the resources between the cellular users and D2D pairs. So, a resource allocation for D2D communication to coordinate the interference is necessary. Related works for resource allocation that D2D can reuse the resources of more than one cellular user with best CQI(Channel Quality Indicator) have been proposed. D2D communications may still cause interference to the primary cellular network when radio resource are shared between them. To avoid this problem, we propose a radio resource allocation algorithm with low computational complexity for D2D communication in OFDM-based wireless cellular networks. Unlike the previous works, the proposed algorithm utilizes unused ones of the whole resource. The unused resource allocate to on D2D pair can be shared only with other D2D pairs. In other words, if the distance between the D2D pairs is sufficient, we allowed more than two D2D pairs to share the same resources. The simulation results have proven that the proposed algorithm has up to 11 times lower computational complexity than the compared one according to the number of D2D.

• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.475-479
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• 2006

An integrated photonic K-band microwave bandpass filter has been proposed and demonstrated by incorporating a polymeric ring resonator. Its transfer characteristics were adjusted by shilling the resonance wavelength of the ring resonator via the thermooptic effect. The achieved performance of the filter includes the center frequency of 20 GHz, the attenuation of ${\sim}15dB$, the bandwidth of 2 GHz, and the corresponding quality factor of 10. The microwave output power within the passband of the device was adjusted at the rate of about 6.7 dB/mW in the range of 27 dB. This kind of device with electrically controllable transfer characteristics can be applied to implement microwave switches and other devices.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10a
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• pp.281-285
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• 1990

Our N.C. sewing machine is a device that acts sewing automatically in reference to N.C. data made by data input device. Our N.C. sewing mechine is composed of induction motor that has electric clutch and brake, step motor that drives x-y table. Sewing area of our machine is 170 mm * 100 mm, maximum sewing speed is about 2000 spm, maximum stitch length 6.2 mm. In actual sewing, synchronization between motion of needle up-down and motion of x-y table is a critical factor. In this paper, technology about synchronization will be profoundly discussed.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.83-87
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• 2023

In the field of electronics and semiconductor technology, innovative semiconductor material research to replace Si is actively ongoing. However, while research on alternative materials is underway, there is a significant lack of studies regarding the relationship between 2D materials used as channels in transistors, especially parasitic resistance, and RF (radio frequency) applications. This study systematically analyzes the impact on electrical performance with a focus on various transistor structures to address this gap. The research results confirm that access resistance and contact resistance act as major factors contributing to the degradation of semiconductor device performance, particularly when highly scaled down. As the demand for high-frequency RF components continues to grow, establishing guidelines for optimizing component structures and elements to achieve desired RF performance is crucial. This study aims to contribute to this goal by providing structural guidelines that can aid in the design and development of next-generation RF transistors using 2D materials as channels.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.