• Journal of Power Electronics
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• v.10 no.6
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• pp.643-646
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• 2010

An interactive web-based teaching tool for a power semiconductor course at the University of Central Florida is presented in this paper. A novel approach is introduced using Technology Aided Design Tools (TCAD) to generate time-lapsed 2D semiconductor device cross-section embedded in a webpage using $Adobe^{(R)}$ Flash (web design tool) platform to create interactive movies that demonstrate complex device physical phenomenon. Students can step through the interactive movies forward, backward, pausing, or looping. Each step represents a giving bias condition. Current-voltage plots are represented along with the semiconductor device and a visual point is placed on the IV curve to indicate the current bias conditions. The changes are then reflected in the 2D cross-section movie area and the IV plot. This tool was implemented in a classroom setting to augment the lectures or for discovery learning.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• Current Optics and Photonics
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• v.1 no.5
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• pp.514-524
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• 2017

We proposed an integrated wavelength-selective photodetector based on a grating-assisted contradirectional coupler and a graphene absorption layer for a coarse wavelength division multiplexing (CWDM) communication system. The center wavelength of the absorption spectrum of the proposed device can be tuned simply by changing the period of the grating, and the proposed device structure is suitable to forming a cascaded structure. Therefore, an array of the proposed device of different grating periods can be used for simultaneous wavelength demultiplexing and signal detection in a CWDM communication system. Our theoretical study showed that the designed device with a grating length of $500{\mu}m$ could have an absorption of 95.1%, an insertion loss of 0.2 dB, and a 3 dB bandwidth of 7.5 nm, resulting in a -14 dB crosstalk to adjacent CWDM channels. We believe that the proposed device array can provide a compact and economic solution to receiver implementation in the CWDM system by combining functions of wavelength demultiplexing and signal detection.

• ETRI Journal
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• v.45 no.6
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• pp.1035-1045
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• 2023

We propose a novel graphics processing unit (GPU) algorithm that can handle a large-scale 3D fast Fourier transform (i.e., 3D-FFT) problem whose data size is larger than the GPU's memory. A 1D FFT-based 3D-FFT computational approach is used to solve the limited device memory issue. Moreover, to reduce the communication overhead between the CPU and GPU, we propose a 3D data-transposition method that converts the target 1D vector into a contiguous memory layout and improves data transfer efficiency. The transposed data are communicated between the host and device memories efficiently through the pinned buffer and multiple streams. We apply our method to various large-scale benchmarks and compare its performance with the state-of-the-art multicore CPU FFT library (i.e., fastest Fourier transform in the West [FFTW]) and a prior GPU-based 3D-FFT algorithm. Our method achieves a higher performance (up to 2.89 times) than FFTW; it yields more performance gaps as the data size increases. The performance of the prior GPU algorithm decreases considerably in massive-scale problems, whereas our method's performance is stable.

• Proceedings of the Korean Information Science Society Conference
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• 2012.06d
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• pp.372-374
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• 2012

급속도로 증가하는 모바일 데이터 트래픽으로 인해 현재 이동통신 기술에서 모바일 트래픽 감소와 네트워크 효율 증대가 가능한 기술이 필요시 되고 있다. D2D 통신은 인접한 기기간의 직접 통신을 지원함으로써 기지국에서의 트래픽 과부하를 분산시키고 기기 간 인접함을 이용해 놓은 전송속도, 낮은 전송시간, 낮은 전력소모의 이득을 얻을 수 있으며 기지국을 이용한 통신과의 주파수 재사용으로 인한 자원 재활용 이득을 얻을 수 있다. 이러한 이점으로 인해 D2D는 차세대 이동통신 기술의 중요한 요소로 여겨지고 있으며 표준화 단체와 여러 기업에서 D2D를 활용한 차세대 이동통신 기술을 개발하는데 많은 투자를 하고 있다. 본 논문에서는 D2D에 대한 설명과 Qualcomm 사의 D2D 기술인 FlashLinQ, Nokia 사의 D2D 통신기술에 대하여 알아보고 미래 이동통신 환경에서 D2D 기술을 활용한 다양한 서비스 시나리오를 분류하고 이에 대한 요구사항을 정리해 봄으로써 D2D를 활용한 이동통신기술 개발의 초석을 마련한다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.19-22
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• 2013

Recently, high speed transmission and large information demand have been increased. Also, researches of integrated optical device for large production and high-efficient planar lightwave circuit (PLC) have been increased. In this paper, integrated optical alignment is proposed which makes passive alignment between optical device and optical fiber possible. The integrated optical device consists of splitter structures which have one input and two outputs. The proposed integrated structure was fabricated by roll-to-roll (RTR) processing method. This method enables to manufacture continuously and the processing time can be shortened. Optical property of the fabricated optical device showed 3.9 dB insertion loss and 0.2 dB optical uniformity using the light source with 1550 nm wavelength.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.25-34
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• 1981

Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.486-488
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• 2009

High efficiency deep blue and pure white phosphorescent organic light emitting diodes were developed using a new deep blue phosphorescent dopant, tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium (FCNIr). A high quantum efficiency of 9.1 % with a color coordinate of (0.15, 0.16) at 1,000 cd/$m^2$ was obtained in the deep blue device and a high quantum efficiency of 15.2 % with a color coordinate (0.30, 0.32) was obtained in the pure white organic light-emitting diodes. The quantum efficiency of the pure white device is the best quantum efficiency value reported in the pure white device up to now.