• Proceedings of the KSR Conference
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• 2006.11b
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• pp.731-735
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• 2006

The Rolling Stock pursues more safe, speedy and accurate operation on the increment of the passenger and the short headway. Signalling system is providing an assurance on safety and reliability of the system, which is based on fail-safe concept. Therefore we are willing to study up on MMI device for new onboard ATP/ATO equipment which is used for driver to recognize train status and fault more quickly and to solve any problem more rapidly, which can maximize the stability and reliability of the system.

• Proceedings of the KIEE Conference
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• 2003.11a
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• pp.272-274
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• 2003

Distribution system reliability evaluation estimates by approach methods such as Makove modelling or Monte Carlo simulation, equation of state and failure rate that is on one basic data used to these assessment technique is described as probability of average value. because average failure rate equipment device is aged as time goes by but there is shortcoming that such used failure rate does not evaluate thing which is correct in reliability change hereafter. In this paper, failure rate displayed that apply aging to basis equipment device by passing time using Weibull distribution one of life evaluation method and for express aging of component from utility's failure database.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.12
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• pp.2635-2642
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• 2012

MOST(Media Oriented Systems Transport) is a network protocol for vehicle multimedia, where it guarantees large bandwidth and reliability. However, previous MOST device utilized I2C or I2S communication method to data manage or transfer, Bandwidth of MOST have increased and additional equipments are added to one device, requiring a larger form of bandwidth communication method. Therefore, this research suggests of the methods in improving the efficiency of asynchronous data transfer, and suggest an algorithm, which will improve the reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.1D
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• pp.17-21
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• 2006

The systematic validation of the ITS devices' performance reliability is very important because it helps their performance reliability to be maintained in a certain level, enabling to assure the reliability of the collected data, processed data and provided information. Although the government's regulation, "Transportation Efficiency Act", which requires ITS devices to be validated, was passed in 2001, no systematic inspection and calibration procedures have been developed so far. Therefore, in this study the systematic and efficient inspection and calibration method or procedure is investigated by reviewing the similar cases and best practices in Korea and overseas and some recommendations are made.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• The Journal of Korean Academy of Prosthodontics
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• v.25 no.1
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• pp.253-267
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• 1987

The purpose of this study was to improve limitations and disadvantages of the mechanical pantograph and the Visi-Trainer, and to design the reliable and reproducible device mandibular movement tracking device (MMTD) that is more simple, convenient and save the chair time than the mechanical pantograph and Visi-Trainer. MMTD was consist of head frame, horizontal bar, condylar path tracking stylus holders, anterior path tracking stylus holder, two condylar path plastic recording plates, one anterior path plastic recording plate, toggles and open occlusal clutch. To prove the reliability and reproducibility of MMTD, a five adults were selected and mandibular condylar movement was recorded one time by the mechanical pantographic tracing and MMTD. The border movement recording of the mandibular incisor (frontal, sagittal and horizontal) was also recorded by Visi-Trainer and the MMTD. The obtained results were as follows; 1. The condylar movement path (sagittal, horizontal) of the MMTD was not coincidence with that of mechanical pantograph. 2. Measurements of the angulation which established between working and balancing path records by use of the mechanical pantograph and MMTD, there was no significance. 3. In a view of MMTD's reproducibility, there was revealed almost similar recording pattern. 4. The border movement recording of the mandibular incisor by the MMTD and the Visi-Trainer showed almost same reliability and reproducibility. 5. The subjects were able to his original mandibular movements by use of open occlusal clutch in the MMTD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.792-796
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• 2014

In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.3
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• pp.89-94
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• 2016

In this experimental study, the effects of top clearance on the performance of automotive a/c compressor were studied. Top clearance measuring device was also developed to ensure the reliability using vacuum conditions to secure constant control of top clearance without external environmental influence. Our results revealed that the improvements in compressor performance according to different top clearance values using the same compressor and same operator were about 4.12% at 800 rpm and about 7.8% at 2,000 rpm in 0.243~0.252 mm of top clearance compared to 0.431~0.456 mm of top clearance. To confirm the consistency in measuring top clearance affecting compressor performance, the top clearance measuring device was developed in this study using a vacuum pump. After performing reliable tests repeatedly, the distribution of measuring values under this device was within 0.99~1.83%, indicating that the constant test data in compressor performance was not affected by any other external environment.