• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.17-20
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• 1998

Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.544-549
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• 2001

The effect of power supply voltage on the performance limits in a laboratory Magneto-rheological fluid based device was identified by experiments. It suggests that the frequency range of motion for control be limited by the voltage attenuation due to the coil inductance and the maximum power supply voltage set for practical use of MRF devices. In this work, the magnetic and electrical characteristics of MRF device are investigated and a design procedure is formulated to achieve the desired performance for a given power supply.

• Membrane and Water Treatment
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• 제1권2호
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• pp.159-169
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• 2010

The effect of external recycle on the performance of dialysis in countercurrent-flow rectangular membrane modules was investigated both theoretically and experimentally. Theoretical analysis of mass transfer in parallel-flow device with and without recycle is analogous to heat transfer in parallel-flow heat exchangers. Experiments were carried out with the use of a microporous membrane to dialyze urea aqueous solution by pure water. In contrast to a device with recycle, improvement in mass transfer is achievable if parallel-flow dialysis is operated in a device of same size with recycle which provides the increase of fluid velocity, resulting in reduction of mass-transfer resistance, especially for rather low feed volume rate.

• 한국안전학회지
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• 제31권6호
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• pp.19-24
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• 2016

One of key parameters on lightning protection system design of electric, information and communication system is grounding impedance. Earth impedance includes numerous information about earthing performance of grounding system. This paper suggests grounding impedance measuring device which is comprised of wideband current source, voltage and current measuring components. We used IQ Demodulation to measure more accurate phase difference of voltage and current. The range of frequency is up to 1 MHz that is IEEE defined as the range of lightning surge. We compared developed grounding impedance measuring device with existing one to test its performance, and we used grounding system while we implemented measurement and analysing by using fall of potential method IEEE Std.81 proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• 한국통계학회:학술대회논문집
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• 한국통계학회 2005년도 춘계 학술발표회 논문집
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• pp.197-201
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• 2005

In this article, we will compare the performance of the mean control chart, the median control chart, the transformed mean control chart, the transformed median control chart, and the precedence control chart by simulation study. For control charts with transformed data, Yeo-Johnson transformation is used. Under the in-control condition, ARL's in all control charts coincide with the designed ARL in the normal distribution, but in the other distributions, only the precedence control chart provides the in-control ARL as designed. Under the out-of-control condition, the mean control chart is preferred in the normal distribution and the median control chart is preferred in the heavy-tailed distribution and the precedence control chart outperforms in the short-tailed distribution.

• ETRI Journal
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• 제31권6호
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• pp.642-646
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• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• Journal of Mechanical Science and Technology
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• 제15권11호
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• pp.1517-1523
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• 2001

The effect of power supply voltage on the performance limits in a laboratory magneto-rheological fluid based device was identified by experiments. It suggests that the frequency range of motion for control is limited by the voltage attenuation due to the coil inductance and the maximum power supply voltage set for practical use of an MRF devices. In this work, the magnetic and electrical characteristics of the MRF device are investigated and a design procedure is formulated to achieve the desired performance for a given power supply.

• Computers and Concrete
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• 제20권4호
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• pp.419-427
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• 2017

A methodology, based on fragility functions, is proposed to evaluate the seismic performance of seismic isolated $45^{\circ}$ skewed concrete bridge: 1) twelve types of seismic isolation devices are considered based on two different design parameters 2) fragility functions of a three-span bridge with and without seismic isolation devices are analytically evaluated based on 3D nonlinear incremental dynamic analyses which seismic input consists of 20 selected ground motions. The optimum combinations of isolation device design parameters are identified comparing, for different limit states, the performance of 1) the Seismic Isolated Bridges (SIB) and 2) Not Seismic Isolated Bridge (NSIB) designed according to the AASHTO standards.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.221-225
• /
• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate