• 제목/요약/키워드: Device fabrication

검색결과 1,417건 처리시간 0.038초

공작물 적재를 위한 자동정렬 및 적재장치의 설계 및 제작 (Design and Fabrication of an Automatic Alignment and Loading System for Workpieces)

  • 이재경;최명철;김갑순
    • 한국기계가공학회지
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    • 제17권3호
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    • pp.134-140
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    • 2018
  • This paper describes the design and fabrication of an automatic alignment and loading system for workpieces. To move a workpiece to a chucking position of a machine tool using a gantry robot, an automatic aligning device is required to load the workpiece before machining and automatically align them. The automatic alignment system was conceptually designed, and the structural analysis was performed for the main parts such as the top plate, center support, front and back support, and support shaft. Based on the structural analysis results, the size of these structures was determined. The automatic alignment system was manufactured, and the vertical movement characteristics of the workpiece up-and-down movement device and the rotation characteristics of the workpiece rotation device were experimentally examined. The result has confirmed that they operate normally.

반도체 공정용 차압식 질량 유량 제어 장치의 개발 및 성능 평가 (Development and Evaluation of Differential Pressure Type Mass Flow Controller for Semiconductor Fabrication Processing)

  • 안진홍;강기태;안강호
    • 반도체디스플레이기술학회지
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    • 제7권3호
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    • pp.29-34
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    • 2008
  • This paper describes the fabrication and characterization of a differential pressure type integrated mass-flow controller made of stainless steel for reactive and corrosive gases. The fabricated mass-flow controller is composed of a normally closed valve and differential pressure sensor. A stacked solenoid actuator mounted on a base-block is utilized for precise and rapid control of gas flow. The differential pressure flow sensor consisting of four diaphragms can detect a flow rate by deflection of diaphragm. By a feedback control from the flow sensor to the valve actuator, it is possible to keep the flow rate constant. This device shows a fast response less than 0.3 sec. Also, this device shows accuracy less than 0.1% of full scale. It is confirmed that this device is not attacked by toxic gas, so the integrated mass-flow controller can be applied to advanced semiconductor processes which need fine mass-flow control corrosive gases with fast response.

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Carbon nanotube/silicon hybrid heterojunctions for photovoltaic devices

  • Castrucci, Paola
    • Advances in nano research
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    • 제2권1호
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    • pp.23-56
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    • 2014
  • The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.

Direct Printable Nanowire p-n Junction device

  • Lee, Tae-Il;Choi, Won-Jin;Kar, Jyoti Prakash;Moon, Kyung-Ju;Lee, Min-Jung;Jun, Joo-Hee;Baik, Hong-Koo;Myoung, Jae-Min
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.30.2-30.2
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    • 2010
  • Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

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고집적 저손실 집적광학회로 구현을 위한 수직형 비대칭 폴리머 광 결합기의 특성 분석 및 최적화 (The characteristics and optimization of vertical asymmetry polymeric optical coupler for fabrication of integrated optic circuits with high integration and low loss)

  • 이소영;송재원
    • 한국통신학회논문지
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    • 제25권5A호
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    • pp.674-681
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    • 2000
  • 제작 공정이 단순하고 결합길이가 매우 짧은 폴리머를 이용한 수직형 비대칭 광 결합기를 새로이 제안하였다. 제안된 소자의 결합 특성을 분석하여 최적화를 도모하였다. 광통신 파장대인 1.33$\mu\textrm{m}$, TE모드에서 중간 버퍼층 두께 t=0.4$\mu\textrm{m}$이고, nu=1.522, n1=1.51이고 nt=1.49일 때, 결합길이가 277$\mu\textrm{m}$이며, 최고 94%의 결합효율을 얻을 수 있었다. 이는 전체 소자길이를 감소시켜, 도파 손실을 줄일 수 있으며, 고직적화는 물론 공정의 단순화로 인한 생산 시간 및 비용 절감과 향 후 광 스위치나 변조기로의 응용도 기대된다.

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Thin Film Energy Storage Device with Spray-Coated Sliver Paste Current Collector

  • Yoon, Seong Man;Jang, Yunseok;Jo, Jeongdai;Go, Jeung Sang
    • ETRI Journal
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    • 제39권6호
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    • pp.874-879
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    • 2017
  • This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass-manufacturable spray-coating technology enables the fabrication of two different half-cell electric double layer capacitors (EDLC) with a spray-coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half-cell EDLC with the spray-coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half-cell EDLC with the spray-coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from -0.5 V to 0.5 V, the spray-coated thin film energy storage device exhibits a better performance.