• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1764-1770
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• 2011

In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.

• Journal of Navigation and Port Research
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• v.38 no.3
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• pp.211-216
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• 2014

In this paper, high throughput method is studied to provide floating objects with broadband service as ship by using satellite. In recent, satellite broadcastings standard is based on DVB-S3 for communication service using wireless device on navigation communication by satellite. LDPC codes are iterative coding algorithm proposed in DVB-S3. In this paper, FTN technique is applied to LDPC codes with 8-PSK modulation and then present the method to alleviate performance degradation due to FTN through BICM-ID. BICM-ID is the method to improve performance by calculating a new LLR from hard-decision value of decoder output. DVB-S2 system with 8-PSK modulation and FTN technique based on iterative decoding had a better performance than DVB-S2 with 8-PSK modulation and FTN technique over Gaussian channels.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• KIISE Transactions on Computing Practices
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• v.21 no.3
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• pp.269-274
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• 2015

As smart device companies such as Google or Apple develop competitive mobile-based automotive operating systems and navigation systems, the range of choice for users in such markets is expanding. Navigation systems equipped with mobile operating systems have increased convenience for users. However, since an API for the POI databases used in navigation systems doesn't exist, the number of applications using POI data is insufficient. In this paper, we designed and implemented system calls for navigation operating systems with a focus on POI search, in order to resolve such limitations. The system calls support set-based POI search functions, and therefore provides solutions to search performance degradation problems caused by false inputs. As a result of performance evaluation, not only did the search performance improve, but there was also no problem in applying APIs in applications.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.598-605
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• 1995

Thin films of $YB_{2}Cu_{3}O_{7-d}$ were prepared on various substrated of MgO(100), $SrTiO_{3}$, and $LaAlO_{3}$ by using off-axis magentron sputtering methods and annealing in-situ. The prarameters of film fabrication processes had been optimized through a "follow the lcoal maxima" strategy to yield good quality films in therms of the critical temperature $T_{c}$ and the critical current density $J_{c}$. Optimizedproecsses employing a plane magndtron and an cylindrical magnetron yielded $T_{c}$>90K along with $J_{c}$$10^{6}$A/$\textrm{cm}^2$ at 77K and > 2${\times}$$10^{7}$A/$\textrm{cm}^2$ at 5K. The sampels, however, showed degradationinthe properties, after chemical etching for fabrication of microbridges with the line width of 2-10 mocrons. In particular, the value of $T_{c}$ for the microbridges of 2microns was as small as 80%. The degradation was strongly dependent on the line width through a formula : $T_{c}$(e)=$T_{c}$)b) [1-a exp(-1000 bL)} where $T_{c}$(e) and $T_{c}$ (b) are the values of $T_{c}$ in the absolute scale measured after and before chemical etching, respectively and L is the line width in mm. By utilizing a best fitting technique, the proper constant values of a and to b were found as exp(-1.2) and 0.22, respectively. This formula was very useful in estimatiing the upper limit of the device operationtemperature.

• Journal of the Korean Society for Railway
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• v.20 no.4
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• pp.466-473
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• 2017

Recently, domestic railway related institutes are developing pantographs for high speed trains; to lighten the upper arm, this device has a composite structure of CFRP (Carbon Fiber Reinforced Plastic) and aluminum instead of conventional steel. In the case of KTX-Sancheon, the pantograph must have a large current capacity because this system is of power-car type, supplying all necessary power for the train through a single pantograph. If the thickness of the pipe is arbitrarily increased in order to increase the current carrying capacity, without analyzing the thermal characteristics of the aluminum pipe, the increase in the weight of the upper arm may cause degradation of the current collecting performance. Therefore, in this paper, using the thermal analysis technique, we analyze the temperature change characteristics of the aluminum pipe of the upper arm over time, while receiving power at the stationary state of the KTX-Sancheon; we also examine the adequacy of the minimum thickness of the aluminum pipe in accordance with the proposed pantograph flow capacity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.149-154
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• 2007

Bragg reflecting waveguide devices have been fabricated on a flexible polymer substrate utilizing a post lift-off process which could Provide excellent uniformity of grating Patterns on Plastic film. The 510 m Period Bragg grating pattern is made by two methods. In the first sample the grating is fabricated by exposing the laser interference pattern on a photoresist, and then it is inscribed by $O_2$ plasma etching. The grating pattern of the second sample is formed by a PDMS soft mold imprinting process. The selective adhesion property of SU-8 material for Au and Si surfaces is utilized to prepare a 100-mm thick plastic substrate. Single mode waveguide is fabricated on the plastic substrate using polymer materials with refractive indices of 1.540 and 1.430 for the core and the cladding layers, respectively. The Bragg grating on Plastic substrate does not show any degradation in its spectral response compared to the reference sample made on a silicon wafer.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.9
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• pp.877-880
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• 2009

A curing process in post-printing section of R2R process is required for an electrical property of the printed pattern when devices such as RFID, Solar cell are printed. PEN as well as heat-stabilized PET which is used as a plastic substrate would be deformed at high temperature due to change of its elastic modulus. And crack in the printed pattern, which is on the plastic substrate is occurred due to the deformation of the substrate. The occurrence of crack causes electrical resistance to increase and the quality of the device to deteriorate. In case of RFID antenna, the range of reading distance is shortened as the electrical resistance of the antenna is increased. Therefore, the deformation of the plastic substrate, which causes the occurrence of crack, should be minimized by setting up low operating tension in R2R process. In low tension, slippage between a moving substrate and a roller would be generated when the operating speed is increased. And scratch would be occurred when slippage is generated due to an air entrainment, which is related to the thickness of the air film. The thickness of the air film is increased when operating speed is increased as shown by simulation based on mathematical model. The occurrence of scratch in conductive pattern printed by roll to roll process is a critical damage because it causes degradation or failure of electrical property of it.