• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.98-100
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• 1989

Langmuir-Blodgett(LB) technique will be used to produce ultra thin film, and then characterization of the physical and electrical properties of LB ultra thin films, this study will be an investigation for the possibilities of the ultra thin films as an Molecular Electronic Device.

• Journal of the Korean Graphic Arts Communication Society
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• v.25 no.1
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• pp.121-133
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• 2007

The CMS(color management system) software was to enable consistent color reproduction from original to reproduction. The CMS was to create RGB monitor and printer characterization profiles and then use the profiles for device independent color transformation. The implemented CMM(color management module) used the CIELAB color space for the profile connection. Various monitor characterization model was evaluated for proper color transformation. To construct output device profile, SLI(sequential linear interpolation) method was used for the color conversion from CMYK device color to device independent CIELAB color space and tetrahedral interpolation method was used for backward transformation. UCR(under color removal) based black generation algorithm was used to construct CIELAB to CMYK LUT(lookup table). When transforming the CIE Lab colour space to CMYK, it was possible to involve the gray revision method regularized in the brightness into colour transformation process and optimize the colour transformation by black generation method based on UCR technique. For soft copy colour proofing, evaluating several monitor specialism methods showed that LUT algorithm was useful. And it was possible to simplify colour gamut mapping by constructing both the look-up table and the colour gamut mapping algorithm to a reference table.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.79-80
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.24-25
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• 2001

• Electrical & Electronic Materials
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• v.20 no.2
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• pp.12-21
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• 2007

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.6
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• pp.895-900
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• 1990

With the MOS device scailing down, the substrate concentration must increase in order to avoid punchthrough leakage current due to the DIBL(Drain Induced Barrier Lowering) effect. However the enhancement of the substrate concentration increases source, drain juntion capacitances and substrate current due to hot elelctron, degrading the speed characteristics and reliability of the MOS devices. In this paper, a new device, called CODE(Channel Only Dopant Enhancement) MOS, an its fabrication are proposed. By comparing the fabricated CODE MOSFET with the conventional device, the improvements on DIBL, substrate current and source, drain juntion capacitances are realized.

• Journal of the Korean Graphic Arts Communication Society
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• v.23 no.1
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• pp.27-36
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• 2005

Most of flated scanners and digital cameras in prepress process utilize CCD technology. Device calibration and characterization process is needed to transform the device dependent color to the device independent color. ICC profiles for digital input devices encapsulated information relating the device values to CIELAB or CIEXYZ coordinates. The main purposes of this article is to evaluate some of the transformation methods based on ICC proposed device profiles and to propose optimal color transformation method for accurate color imaging in printing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1075-1079
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• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• Journal of Mechanical Science and Technology
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• v.20 no.3
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• pp.297-309
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• 2006

This paper deals with a novel structure for single-cell characterization which makes use of bimorph micro thermal actuators combined with electrical sensor device and integrated microfluidic channel. The goal for this device is to capture and characterize individual biocell. Quantitative and qualitative characteristics of bimorph thermal actuator were analyzed with finite element analysis methods. Furthermore, optimization for the dimension of cantilevers and integrated parallel probe systems with microfluidic channels is able to be realized through the virtual simulation for actuation and the practical fabrication of prototype of probes. The experimental value of probe deflection was in accordance with the simulated one.