• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.132-134
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• 2006

To improve equipment throughput and device yield, a malfunction in plasma equipment should be accurately diagnosed. A recognition model for plasma diagnosis was constructed by applying neural network to scanning electron microscope (SEM) image of plasma-etched patterns. The experimental data were collected from a plasma etching of tungsten thin films. Faults in plasma were generated by simulating a variation in process parameters. Feature vectors were obtained by applying direct and wavelet techniques to SEM Images. The wavelet techniques generated three feature vectors composed of detailed components. The diagnosis models constructed were evaluated in terms of the recognition accuracy. The direct technique yielded much smaller recognition accuracy with respect to the wavelet technique. The improvement was about 82%. This demonstrates that the direct method is more effective in constructing a neural network model of SEM profile information.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집A
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• pp.411-414
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• 2000

Optical Triangulation Probes (OTPs) are widely used for their simple structure. high resolution, and long operating range. However, errors originating from speckle, inclination of the object, source power fluctuation, ambient light, and noise of the detector limit their usability. In this paper, we propose new design criteria for an error-reduced OTP. The light source module for the system consists of an incoherent light source and a multimode optical fiber for eliminating speckle and shaping a Gaussian beam Intensity profile. A diffuse-reflective white copy paper, which is attached to the object, makes the light intensity distribution on the change-coupled device(CCD). Since the peak positions of the intensity distribution are not related to the various error sources, a sub-pixel resolution signal processing algorithm that can detect the peak position makes it possible to construct an error-reduced OTP system

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• 한국인쇄학회지
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• 제24권1호
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• pp.23-34
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• 2006

Color reproduction is one of the most important expression factors in digital printing. In this paper, an experiment was done where the characteristics of color reproduction in digital printing. The results could summarized as follows. The printing used device profile showed a color difference of less than printing used default value in digital printing. As a result of weighting color difference, a difference between color gamut of digital original and color gamut of printing, when transforming the RGB color space to CMY color space, a exclusion the gray revision. The solution is to optimize the color transformation by gamut mapping and gray revision.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.659-660
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• 2006

High-aspect-ratio(max. 12.5) microchannels with excellent surface quality and good shape uniformity have been realized utilizing laser-induced etching technique. Etch width and depth variations depend largely upon process variables such as laser power and etchant concentration. Etchant concentration in association with viscosity also influence on the cross-sectional profile of the channels. The optimum process conditions for the fabrication of high-aspect-ratio microchannels applicable to micro thermal devices are demonstrated.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.235-238
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• 2009

To study the relationship between spark ignition and the gap in the nano-scale region, the electric potential was applied to between a Pt-Ir tip and a gold substrate. The tip was sharpened by electro-chemical etching process in the solution of $CaCl_2;H_2O$ and acetone. The radius of tip was measured to be around 200nm and attached to the scanning probe microscope to control the gap between the tip and the substrate. The electric potential of 10V to 80V was applied to initialize the spark. The gaps and the current profile were measured to analyze the characteristics of spark ignition. A spark sustaining time was measured to be between 50ns and 200ns depending on the applied electric potential and the gap between the electrodes. The continuous electric discharge was successfully sustained up to 1 second of spark or arc time. The developed process can be applicable to the micro-scale fabrication of automotive sensors as a similar concept of GTAW.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.391-395
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• 2002

This paper described about the ultra-precision profile measurement of aspheric surfaces using contact probing technique. A contact probe has been designed as a sensing device to obtain measuring resolutions in nanometer regime utilizing a leaf spring mechanism and a capacitive-type sensor. The contact probe is attached on the z-axis during measurement while aspheric objects are supported on the single point diamond turning machine(SPDTM). The machine xz-axis motions are monitored by a set of two orthogonal plane mirror type laser interferometers. Experimental results show that the contact probing technique developed of On-machine Measurement System in this investigation is capable of providing a repeatability of 20 nanometers with a $\pm$20 uncertainty of 300 nanometers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.14-14
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• 2011

Graphene is known to possess excellent thermal properties, including high thermal conductivity, that make it a prime candidate material for heat management in ultra large scale integrated circuits. For device applications, the key parameters are the thermal expansion coefficient and the thermal conductivity. There has been no reliable experimental determination on the thermal expansion coefficient of graphene whereas the estimates of the thermal conductivity vary widely. In this work, we estimate the thermal expansion coefficient of graphene on silicon dioxide by measuring the temperature dependence of the Raman spectrum. The shift of the Raman peaks due to heating or cooling results from both the intrinsic temperature dependence of the Raman spectrum of graphene and the strain on the graphene film due to the thermal expansion mismatch with silicon dioxide. By carefully comparing the experimental data against theoretical calculations, it is possible to determine the thermal expansion coefficient. The thermal conductivity is measured by estimating the thermal profile of a graphene film suspended over a circular hole of the substrate.