• Title/Summary/Keyword: Device Profile

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A Study on the Device Independent Color Reproduction of CCD Input Devices based the ICC Profile (ICC Profile에 기반한 CCD 입력장치의 장치독립적 색재현에 관한 연구)

  • Song, Kyung-Chul;Shin , Chun-Bum;Kang, Sang-Hoon
    • Journal of the Korean Graphic Arts Communication Society
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    • v.23 no.1
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    • pp.27-36
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    • 2005
  • Most of flated scanners and digital cameras in prepress process utilize CCD technology. Device calibration and characterization process is needed to transform the device dependent color to the device independent color. ICC profiles for digital input devices encapsulated information relating the device values to CIELAB or CIEXYZ coordinates. The main purposes of this article is to evaluate some of the transformation methods based on ICC proposed device profiles and to propose optimal color transformation method for accurate color imaging in printing process.

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Dynamic Analysis of a Flow Passage Opening Device in Flight Profile of a High-speed Vehicle (고속 비행체의 비행궤적별 유로개방장치 동역학 해석)

  • Jung, Sungmin;Park, Jeong-Bae
    • Journal of the Korean Society of Propulsion Engineers
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    • v.19 no.5
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    • pp.98-103
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    • 2015
  • A flow passage opening device utilizing an acceleration follow-up technique allows fuel to flow continuously through a pressurized fuel tank system. It is very difficult to test the device in a real flight situation because of severe test condition and a cost problem. In this paper, therefore, the results of a basic negative g test conducted by low-speed airplane are compared with RecurDyn simulation. Dynamic behavior of the device in total flight profile of a high-speed vehicle is also analyzed by using RecurDyn to predict its performance.

u-Healthcare Monitoring System Design using by Smartphone base on Bluetooth Health Device Profile (Bluetooth Health Device Profile기반 스마트폰을 이용한 u-Healthcare 모니터링 시스템 설계)

  • Cho, Kyoung-lae;Kim, Sang-yoon;Kim, Jung-han;Oh, Am-Suk;Jean, Jae Hwan;Kang, Sung-in
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.392-394
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    • 2013
  • 최근 u-Healthcare 서비스에서 다양한 생체정보를 간편하게 측정하는 개인건강기기(PHD)와 측정된 정보를 전송하고 수집하기 위한 표준의 필요성이 제품 간의 이식성, 확장성, 상호 운영성을 보장하기 위해 크게 대두되고 있다. 개인건강기기에서 측정된 생체정보(산소포화도, 몸무게, 심전도, 혈압 등)를 ISO/IEEE 11073 기반인 Bluetooth Health Device Profile을 이용해서 스마트폰으로 실시간 모니터링 할 수 있는 시스템을 설계한다.

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A Development of Manufacturing Process of Wooden Footpath Block to Reuse of Wood Waste (목질폐잔재를 재활용한 목질보도블록 제조기술 개발)

  • Park, Hee-Jun
    • Journal of the Korean Wood Science and Technology
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    • v.25 no.3
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    • pp.96-104
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    • 1997
  • The objective of this research project was to develop the wooden footpath block to reuse of wood waste. Some physical and mechanical properties of the wooden block such as water absorption, thickness swelling, modulus of rupture, internal bond, density profile and impact resistance were studied. Water absorption and thickness swelling of the wooden block were greatly reduced when the wooden block was pressed inside the forming device than by conventional hot pressing. Also, Modulus of rupture and internal bond of the wooden block were increased greatly when the pressing was completed inside the forming device. The density profile of the wooden block was improved up to 93.5%, minimum to average density ratio. The wooden block manufactured in this study have excellent physical and mechanical prperties in comparison with existing wood based materials. So, these wooden blocks are applicable to footpth block or other exterior members.

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Optimized doping density and doping profile of pn junction for using high power device

  • Jang, Geon-Tae
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.347-349
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    • 2016
  • 본 논문에서는 dopant density에 의존적인 pn junction의 breakdown 특성을 향상시키기 위하여, doping density와 doping profile에 대하여 분석했다. Doping density와 doping profile은 역방향 junction breakdown voltage를 결정하는 중요한 요소인 공핍영역의 두께와 공핍영역 내에 인가되는 electric field를 결정한다. Uniform doping profile과 Gaussian doping profile을 비교했고, 고전압 환경에서 사용할 수 있는 소자를 제작하는데 더욱 적절한 doping profile과 doping 농도에 대해 기술했다.

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A Study on CMP Pad Thickness Profile Measuring Device and Method (CMP 패드 두께 프로파일 측정 장치 및 방법에 관한 연구)

  • Lee, Tae-kyung;Kim, Do-Yeon;Kang, Pil-sik
    • Journal of the Korean Society of Industry Convergence
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    • v.23 no.6_2
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    • pp.1051-1058
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    • 2020
  • The chemical mechanical planarization (CMP) is a process of physically and chemically polishing the semiconductor substrate. The planarization quality of a substrate can be evaluated by the within wafer non-uniformity (WIWNU). In order to improve WIWNU, it is important to manage the pad profile. In this study, a device capable of non-contact measurement of the pad thickness profile was developed. From the measured pad profile, the profile of the pad surface and the groove was extracted using the envelope function, and the pad thickness profile was derived using the difference between each profile. Thickness profiles of various CMP pads were measured using the developed PMS and envelope function. In the case of IC series pads, regardless of the pad wear amount, the envelopes closely follow the pad surface and grooves, making it easy to calculate the pad thickness profile. In the case of the H80 series pad, the pad thickness profile was easy to derive because the pad with a small wear amount did not reveal deep pores on the pad surface. However, the pad with a large wear amount make errors in the lower envelope profile, because there are pores deeper than the grooves. By removing these deep pores through filtering, the pad flatness could be clearly confirmed. Through the developed PMS and the pad thickness profile calculation method using the envelope function, the pad life, the amount of wear and the pad flatness can be easily derived and used for various pad analysis.

Flatness Control System of the Hot Strip by Using Tension Profile between Stands (스탠드간 장력프로파일을 이용한 열연판 평탄도 제어시스템)

  • 홍완기;이준정
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1999.08a
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    • pp.27-36
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    • 1999
  • To have high flatness quality of hot rolled strip in the hot strip finishing mill train, a new inter-stand tension profile measuring device of segmented looper roll type(coined as Flatness Sensing Inter-stand Looper, FlatSIL) and a new flatness control system have been developed in this study. The device measures the strip tension profile across the strip width and informs the strip wave pattern to new flatness control system where work roll bending mode to relieve the strip wave is determined. The existing automatic shape control system which uses laser type shape-meter installed at the outlet of the last finishing mill stand strip tension between down coiler and last finishig mill since the latent wave concealed by the strip tension between down coiler and last finishing mill stand cannot be measured by the laser distance-meter. Thus the existing shape control system is not able to control the flatness through the full strip length. The new flatness control system, however, works for full strip length during strip rolling as far as the tension profile measuring device and work roll bender are on. With the new flatness control system, work roll bender is automatically controller to minimize the latent wave of the running strip and the flatness quality as well as strip travelling stability has been noticeably improved from strip head through body to tail.

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Torque Profile Measuring and Sensibility Evaluation of a Haptic Device (햅틱 장치의 프로파일 측정 및 감성 평가)

  • Jun, Cha-Soo;Choo, Heon-Seong;Park, Se-Hyung;Kim, Lae-Hyun;Shin, Sang-Kyun
    • Korean Journal of Computational Design and Engineering
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    • v.15 no.3
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    • pp.222-233
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    • 2010
  • Developed in this research is a TP (tangible prototyping) system, which consists of two modules; (1) a virtual reality model to evaluate the functions and appearance of the product, and (2) a haptic device to emulate tactile and kinesthetic properties of mechanical dial knobs. As an example, a washing machine is modeled using a commercial CAD system and transformed in VRML and X3D formats. Some dynamic behaviors and kinematic characteristics are programmed using X3D script and Java. Various haptic behaviors of the dial are generated by modulating torque profile according to the rotation angle. A torque profile measuring system is developed to evaluate the behaviors of the haptic dial physically. Haptic sensibility evaluations are accomplished using the TP by semantic differential method.

Wavelet Characterization of Profile Uniformity Using Neural Network

  • Park, Won-Sun;Lim, Myo-Teak;Kim, Byungwhan
    • 제어로봇시스템학회:학술대회논문집
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    • 2002.10a
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    • pp.46.5-46
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    • 2002
  • As device dimension shrinks down to sub 100nm, it is increasingly important to monitor plasma states. Plasma etching is a key means to fine patterning of thin films. Many parameters are involved in etching and each parameter has different impact on process performances, including etch rate and profile. The uniformity of etch responses should be maintained high to improve device yield and throughput. The uniformity can be measured on any etch response. The most difficulty arises when attempting to characterize etched profile. Conventionally, the profile has been estimated by measuring the slope or angle of etched pattern. One critical drawback in this measurement is that this is unable to cap...

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Base Profile Simulation of SiGe Heterojunction Bipolar Transistor for High Frequency Applications (고주파수용 SiGe HBT의 베이스 프로파일 시뮬레이션에 관한 연구)

  • Lee W.H.;Lee J.H.;Park B.S.;Lee H.J.
    • Proceedings of the KAIS Fall Conference
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    • 2004.06a
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    • pp.172-175
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    • 2004
  • This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

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