• Title/Summary/Keyword: Device Profile

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Study on the Reconstruction of KSTAR Plasma Density Profiles Using Microwave Reflectometry (마이크로파 레플렉토메터리를 이용한 KSIAR 플라즈마 밀도분포 재구성에 관한 연구)

  • Roh Young-Su
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.8
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    • pp.365-370
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    • 2005
  • Microwave diagnostics have been widely utilized to measure the important parameters of high temperature and high density plasmas. Reflectometry is known as a promising microwave diagnostic which has a number of merits to measure electron density profiles. In the KSTAR device, X-mode FM reflectometry is planned to measure the plasma density profiles. FM reflectometry is required to extract phase information on raw mixer IF signals, thereby obtaining time-of-flight of reflectometry signals. It is known that the data analysis method is crucial to determine the performance of FM reflectometry In fact, there are several analysis programs which have been utilized in various FM systems. Since each program was developed for a specific device, however, it is difficult to directly apply it to a different reactor like the KSTAR device. It is necessary, therefore, to develop a data analysis program for the KSTAR FM reflectometry. In this paper, complex digital demodulation (CDM) and wavelet transformation are examined in terms of the performance of density profile reconstruction. For the comparison of both methods, FM reflectometry signals are generated on the basis of assumed profiles and the interaction of the X-mode wave and the plasma. In order to see how well both methods work under various conditions, three types of profiles are assumed and noise effects are included. As a result, both methods work well under the condition of gentle density gradient and small noise level. As density gradient becomes steeper and noise level gets higher. the reconstruction performance of wavelet is better than that of CDM.

Design and Implementation of GUI in CVM on Real-Time Operating System, iRTOS (실시간 운영체제에서 iRTOS에서의 CVM GUI 설계 및 구현)

  • Choi, chan-woo;Lee, cheol-hoon
    • Proceedings of the Korea Contents Association Conference
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    • 2008.05a
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    • pp.551-554
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    • 2008
  • JVM(Java Virtual Machine) has GUI(Graphical User Interface) facility and Platform Independance and is used on the embedded device such as set-top box and smart phone. This needs JVM to execute Java application in the embedded device. CVM(Classic Virtual Machine) which is the kind of JVM is designed for embedded device to have limited resources. To support GUI facility of JAVA uses PBP(Personal Basis Profile) which is included on CVM. The PBP defines the GUI Stardard API to support GUI facility. When the GUI Stardard API is implemented, JNI(Java Native Interface) is used to connect between Java Native Method and Native function in Operating System. In this pater, PBP which is defined by CVM has designed and implemented on the Real-Time Operating System, iRTOS.

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A Study on the Development of Noncontact Soldering Device of PV Cells Using Infrared Lamp (적외선 램프를 이용한 비접촉식 태양전지셀 솔더링 장치 개발에 관한 연구)

  • Lho, Tae-Jung;Kim, Seon-Jin;Park, Min-Yong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.1
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    • pp.45-50
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    • 2013
  • The reflector of infrared lamp is designed to the optimal circular shape through the analyses of lumination distributions with a triangular, rectangular and circular configurations of infrared lamps respectively by using Photopia. PLC is used to compare and amplify the difference between soldering temperature profile and feedback value. It is fed to IR lamp controller which adjusts the soldering temperature of PV cell. The soldering temperature measured using an infrared temperature sensor is then fed back to the PLC. The closed control loop of soldering temperature on a PV cell is implemented. The noncontact soldering device of PV cells using infrared lamp which is easily operated by HMI operation panel and controlled robustly by PLC and IR lamp controller is developed.

A Mobile Device Description Language (모바일 단말 정보 표현 언어)

  • Kim, Tae-Hyun;Lee, Seung-Yun;Lee, Kang-Chan;Lee, Won-Suk;Jung, Hoe-Kyung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.811-814
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    • 2007
  • Mobile device will be able to use the various contents from the advancement of the wireless Internet and mobile device manufacture technique. Each devices HTTP headers about under using provides terminal information to contents provider which is provided the contents which is suitable in device. But there is not a standard for a terminal information proηsion and when using the contents of service network outside, interoperability problems mobile communication it will provides terminal information in different method. International Organization for Standard OMA UAProf about under using it solved interoperability problems from outside. But about under using it provides terminal information, MMS support and Smart Card support, against an external storage space supporting information it is not seen clearly UAProf not to be, it will not be able to provide terminal information which is complete. This paper hereupon it designed UAProf in base which provides the contents which has become optimize to the mobile device of domestic environment the mobile device description language which expresses device information which is necessary.

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Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET-Analytical Modeling and Simulation

  • Vanitha, P.;Balamurugan, N.B.;Priya, G. Lakshmi
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.585-593
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    • 2015
  • In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.

Effect of Flow Uniformity Device on the Catalytic Combustor for 5 kW High Temperature Fuel Cell System (5 kW급 고온형 연료전지 촉매 연소기 유동 균일화 장치가 연소 특성에 미치는 영향)

  • Lee, Sang-Min;Woo, Hyun-Tak;Ahn, Kook-Young
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.6
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    • pp.878-883
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    • 2011
  • Effect of flow uniformity on the reaction characteristics of a catalytic combustor for high temperature fuel cell system has been experimentally investigated in the present study. One of the most important factor in designing catalytic combustion is to avoid hot spot in catalysts. In this regard, it is very important to secure flow uniformity of combustor inlet. A couple of perforated plates were applied at the front of catalyst region as flow uniformity device with minimal pressure drop. Results show that the velocity and temperature profile became more uniform when applying the flow uniformity device. CO and $CH_4$ emissions at the combustor exit were decreased and the average exit temperature was slightly increased with the flow uniformity device.

Design of S-Shaped Path and Velocity Profile of Moving Stage Using Three Point Locations (3 점을 이용한 이동 무대의 S 곡선 경로 설계)

  • Jung, Kwang-Oh;Oh, Se-Kyu;Kim, Dong-Hwan
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.1
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    • pp.67-76
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    • 2011
  • An exact curved path has to be fixed and velocity profile for travelling on the curved path is required by a moving stage. In this study, we decide the curved path on the basis of the information on three point locations. The path of the moving stage is traced by simulating the designed curve path and the velocity profile, and the results are compared with the given three points to determine how closely the moving stage follows the given path. Further, we propose a method to calibrate a curved path and velocity profile. The proposed moving paths were evaluated by performing experiments. Finally, the designed curved path and the actual path were compared.

DEVELOPMENT OF LIGHTWEIGHT OPTICAL TELESCOPE KIT USING ALUMINUM PROFILE AND ISOGRID STRUCTURE

  • Park, Woojin;Lee, Sunwoo;Han, Jimin;Ahn, Hojae;Ji, Tae-Geun;Kim, Changgon;Kim, Dohoon;Lee, Sumin;Kim, Young-Jae;Kim, Geon-Hee;Kim, Junghyun;Kim, Ilhoon;Pak, Soojong
    • Journal of The Korean Astronomical Society
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    • v.55 no.1
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    • pp.11-22
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    • 2022
  • We introduce the Transformable Reflective Telescope (TRT) kit that applies an aluminum profile as a base plate for precise, stable, and lightweight optical system. It has been utilized for optical surface measurements, developing alignment and baffle systems, observing celestial objects, and various educational purposes through Research & Education projects. We upgraded the TRT kit using the aluminum profile and truss and isogrid structures for a high-end optical test device that can be used for prototyping of precision telescopes or satellite optical systems. Thanks to the substantial aluminum profile and lightweight design, mechanical deformation by self-weight is reduced to maximum 67.5 ㎛, which is an acceptable misalignment error compared to its tolerance limits. From the analysis results of non-linear vibration simulations, we have verified that the kit survives in harsh vibration environments. The primary mirror and secondary mirror modules are precisely aligned within 50 ㎛ positioning error using the high accuracy surface finished aluminum profile and optomechanical parts. The cross laser module helps to align the secondary mirror to fine-tune the optical system. The TRT kit with the precision aluminum mirror guarantees high quality optical performance of 5.53 ㎛ Full Width at Half Maximum (FWHM) at the field center.

Method of Profile Storage for Improving Accuracy and Searching Time on Ubiquitous Computing

  • Jang, Chang-Bok;Lee, Joon-Dong;Lee, Moo-Hun;Cho, Sung-Hoon;Choi, Eui-In
    • Journal of Korea Multimedia Society
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    • v.9 no.12
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    • pp.1709-1718
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    • 2006
  • Users are able to use the information and service more free than previous wire network due to development of wireless network and device. For this reason, various studies on ubiquitous networks have been conducted. Various contexts brought in this ubiquitous environment, have recognized user's action through sensors. This results in the provision of better services. Because services exist in various places in ubiquitous networks, the application has the time of services searching. In addition, user's context is very dynamic, so a method needs to be found to recommend services to user by context. Therefore, techniques for reducing the time of service and increasing accuracy of recommendation are being studied. But it is difficult to quickly and appropriately provide large numbers of services, because only basic context information is stored. For this reason, we suggest DUPS(Dimension User Profile System), which stores location, time, and frequency information of often used services. Because previous technique used to simple information for recommending service without predicting services which is going to use on future, we can provide better service, and improve accuracy over previous techniques.

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Study of plasma induced charging damage and febrication of$0.18\mu\textrm{m}$dual polysilicon gate using dry etch (건식각을 이용한 $0.18\mu\textrm{m}$ dual polysilicon gate 형성 및 plasma damage 특성 평가)

  • 채수두;유경진;김동석;한석빈;하재희;박진원
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.490-495
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    • 1999
  • In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

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