• Title/Summary/Keyword: Deuterium annealing

Search Result 15, Processing Time 0.02 seconds

Electrical Characteristics of Ultra-thin $SiO_2$ Films experienced Hydrogen or Deuterium High-pressure Annealing (고압의 수소 및 중수소 분위기에서 열처리된 실리콘 산화막의 전기적 특성 관찰)

  • Lee, Jae-Sung;Baek, Jong-Mu;Do, Seung-Woo;Jang, Cheol-Yeong;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.29-30
    • /
    • 2005
  • Experimental results are presented for the degradation of 3 nm-thick gate oxide ($SiO_2$) under both Negative-bias Temperature Instability(NBTI) and Hot-carrier-induced(HCI) stresses using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (1~5 atm.). Statistical parameter variations depend on the stress conditions. We suggest that deuterium bonds in $SiO_2$ film is effective in suppressing the generation of traps related to the energetic hot electrons.

  • PDF

Effects of Annealing Gas and Pressure Conditions on the Electrical Characteristics of Tunneling FET (가스 및 압력조건에 따른 Annealing이 Tunneling FET의 전기적 특성에 미치는 영향)

  • Song, Hyun-Dong;Song, Hyeong-Sub;Babu, Eadi Sunil;Choi, Hyun-Woong;Lee, Hi-Deok
    • Journal of IKEEE
    • /
    • v.23 no.2
    • /
    • pp.704-709
    • /
    • 2019
  • In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

Work Function Change of W(123) Plane Due to Hydrogen and Deuterium Adsorption at 78K (78K에서 수소 혹은 중수소 흡착으로 인한 W(123)면의 일함수 변화)

  • 박노길;김기석;김성수;정광호;황정남;최대선
    • Journal of the Korean Vacuum Society
    • /
    • v.1 no.1
    • /
    • pp.78-82
    • /
    • 1992
  • The changes in work function due to hydrogen and deuterium adsorption on W(123) plane are measured by means of Field Emission Method. In the case of hydrogen or deuterium adsorption, work function of W(123) plane at 78 K increase and after a maxium value, it decrease and saturated as increasing coverage. After annealing the tungsten emission tip at 200 K, the coverage corresponding to maximum change in work function was shifted toward low coverage and the effect of work function by terraces or steps of which orientation is [ O l l ] was observed.

  • PDF

SARAPAN-A Simulated-Annealing-Based Tool to Generate Random Patterned-Channel-Age in CANDU Fuel Management Analyses

  • Kastanya, Doddy
    • Nuclear Engineering and Technology
    • /
    • v.49 no.1
    • /
    • pp.267-276
    • /
    • 2017
  • In any reactor physics analysis, the instantaneous power distribution in the core can be calculated when the actual bundle-wise burnup distribution is known. Considering the fact that CANDU (Canada Deuterium Uranium) utilizes on-power refueling to compensate for the reduction of reactivity due to fuel burnup, in the CANDU fuel management analysis, snapshots of power and burnup distributions can be obtained by simulating and tracking the reactor operation over an extended period using various tools such as the $^*SIMULATE$ module of the Reactor Fueling Simulation Program (RFSP) code. However, for some studies, such as an evaluation of a conceptual design of a next-generation CANDU reactor, the preferred approach to obtain a snapshot of the power distribution in the core is based on the patterned-channel-age model implemented in the $^*INSTANTAN$ module of the RFSP code. The objective of this approach is to obtain a representative snapshot of core conditions quickly. At present, such patterns could be generated by using a program called RANDIS, which is implemented within the $^*INSTANTAN$ module. In this work, we present an alternative approach to derive the patterned-channel-age model where a simulated-annealing-based algorithm is used to find such patterns, which produce reasonable power distributions.

Investigation of Nanostructures in Homopolymer and Copolymer Films by Surface Techniques

  • Kang, Minhwa;Lee, Jihye;Lee, Yeonhee
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.276-276
    • /
    • 2013
  • Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and Atomic Force Microscopy (AFM) are the useful instruments to measure nanostructures of material surfaces. Surface pattern formation in blending homopolymer and diblock copolymer films was investigated as a function of film thickness and annealing conditions. In this study, surface structures of blending homopolymer [deuterated polystyrene (Mn 20,000), poly (methyl methacrylate) (Mn 18,000)] and diblock copolymer [Poly (deuteratedstyrene(d8)-b-methyl methacrylate) (Mn 19,500-18,100)] films were observed. The AFM result indicated that the nanostructures and film thickness depended on temperature, concentration and solvent. TOF-SIMS depth profiling was obtained for the lamellar morphology of symmetric dPS-b-PMMA which is found to orient parallel to the surface of the substrate. Elemental and molecular depth profiles measured in the negative ion mode by a Cs+ primary ion beam demonstrate variations in hydrogen, deuterium, carbon, oxygen, hydrocarbons and deuterated hydrocarbons within the diblock copolymer according to the depth.

  • PDF