• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.230-235
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• 2010

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.12
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• pp.3083-3093
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• 1993

Friction and wear at ceramic coated surfaces of aluminum alloy were experimentally studied using a Ring-on-Block wear test machine. Ceramic materials coated on aluminum alloy surfaces were WC, CrC, $Al_{2}O_{3}$ by a plasma spray; and $Al_{2}O_{3}$,$Al_{2}SiO_{5}$, $Na_{2}B_{4}O_{7}$,$Na_{4}P_{2}O_{7}$, and $Al_{2}O_{3}-ZrO_{2}$ composite coating by an Anodic Spark Depositon. They were tested under the sliding wet contact and compared with aluminum alloys and steels. Test results showed that ceramic coated surfaces, in general, have better anti-wear property than those of aluminum alloys due to increase in the surface hardness ; however, they also showed higher coefficients of friction and changes in wear mechanisms, resulting in brittle fractures.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• Journal of Internet of Things and Convergence
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• v.6 no.4
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• pp.21-26
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• 2020

An autonomous driving system is based on the deep learning system built by big data which are obtained by various IoT sensors. The miniaturization and high performance of the IoT sensors are needed for diverse devices including the autonomous driving system. Specially, the miniaturization of the sensors leads to compel the miniaturization of the fixer structures. In the viewpoint of the miniaturization, metallic structure is a best solution to attach the small IoT sensors to the main body. However, it is hard to manufacture the small metallic structure with a conventional machining process or manufacturing cost greatly increases. As one of solutions for the problems, in this work, metallic FDM (Fused depositon modeling) based on metallic filament was proposed and the FDM process was investigated to fabricate the small metallic structure. Final part was obtained by the post-process that consists of debinding and sintering. In this work, the relationship between infill rate and the density of the part after the post-process was investigated. The investigation of the relationship is based on the fact that the infill rate and the density obtained from the post-processing is not same. It can be said that this work is a fundamental research to obtain the higher density of the printed part.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.299-307
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• 1997

NdFeB films have been grown onto Si(100) substrate by a KrF pulsed laser ablation of the targets of $Nd_xFe_{90.98-x}B_{9.02}$ (x=17.51~27.51) at the substrate temperature of 620~700 $^{\circ}C$ and the laser beam energy density of 2.75~5.99 J/$\textrm{cm}^2$. The films exhibit no preferred orientation, however, good hard magnetic properties were produced from as-deposited condition : $4{\pi}M_s$=7 kG, $4{\pi}M_r$=4 kG, and $H_c$=300~1000 Oe. The depositon rate was not greatly influenced by changing the substrate temperature, but it increases linearly by increasing the beam energy density. The beam energy density of 3 J/$\textrm{cm}^2$ gave the optimal condition to have the highest $4{\pi}M_r$ and $H_c$ as well. The higher content of Nd induces a higher coercivity and $4{\pi}M_r$ at the same time without prominent change in $4{\pi}M_s$.