• 제목/요약/키워드: Deposition time

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후처리를 최소화하는 판재적층방식 쾌속조형기의 개발 (Development of Sheet Deposition Type Rapid Prototyping System Minimizing Post Processing)

  • 조인행;이건우;송용억
    • 한국정밀공학회지
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    • 제16권7호
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    • pp.210-218
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    • 1999
  • Sheet deposition type rapid prototyping system have many advantages : high build speed, low operating cost, large part size, no phase change, no need for support generation, and forth. However, those sheet deposition type rapid prototyping system require an additional post processing to remove excessive material attached to the part. This post processing is time consuming and labor intensive. Moreover, it is difficult for those system to fabricate parts with hollow cores and internal cavities. A new sheet deposition type rapid prototyping system that minimizes the post processing is proposed. The proposed system automatically removes excessive material in a peeling-off process between two cutting processes. In this way, the proposed system can reduce the post-processing time and cost as well as the limitation of the feasible geometric shapes in the conventional sheet deposition system.

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수체로의 대기오염물질 건식침적량 측정 (Measurement of Dry Deposition Flux of Air Pollutants to the Waterbody)

  • 김영성;진현철;김용표
    • 한국대기환경학회지
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    • 제20권3호
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    • pp.421-426
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    • 2004
  • Dry deposition fluxes of inorganic acidic species to the waterbody were measured by the dry deposition sampler (DDS). DDS was composed of three pans filled with pure water. An average concentration increase during the sampling time, after removing an abnormal value if existed, was considered as the input by deposition. Important operation parameters such as the amount of water used and sampling time were determined through a series of laboratory experiments. The deposition flux measured by DDS was compared with that by the water surface sampler developed by Yi et ai. (1997a,b).

Analysis of Laser Control Effects for Direct Metal Deposition Process

  • Choi Joo-Hyun;Chang Yoon-Sang
    • Journal of Mechanical Science and Technology
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    • 제20권10호
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    • pp.1680-1690
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    • 2006
  • As a promising and novel manufacturing technology, laser aided direct metal deposition (DMD) process produces near-net-shape functional metal parts directly from 3-D CAD models by repeating laser cladding layer by layer. The key of the build-up mechanism is the effective control of powder delivery and laser power to be irradiated into the melt-pool. A feedback control system using two sets of optical height sensors is designed for monitoring the melt-pool and real-time control of deposition dimension. With the feedback height control system, the dimensions of part can be controlled within designed tolerance maintaining real time control of each layer thickness. Clad nugget shapes reveal that the feedback control can affect the nugget size and morphology of microstructure. The pore/void level can be controlled by utilizing pulsed-mode laser and proper design of deposition tool-path. With the present configuration of the control system, it is believed that more innovation of the DMD process is possible to the deposition of layers in 3-D slice.

RF Power 변화에 의한 CdS 박막 특성에 관한 연구 (The Korea Institute of Information, Electronics, and Communication Technology)

  • 이달호;박정철
    • 한국정보전자통신기술학회논문지
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    • 제14권2호
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    • pp.122-127
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    • 2021
  • 본 논문은 ITO 유리를 기판으로 사용하여 CdS 박막을 제작하였다. MDS (Multiplex Deposition Sputter System)을 이용하여 RF power와 증착시간을 변화시키면서 소자를 제작하였다. 제작된 시편은 광학적 특성에 대해 분석을 하였다. 본 논문의 목적은 태양전지의 광흡수층에 적용될 수 있는 제작조건을 찾는 것이다. RF power가 50W이고 증착 시간이 10분 일 때, 두께는 64Å로 측정되었다. 100W일?, 두께는 406Å로 측정되었고, 150W일 때는 두꼐는 889Å로 측정되었다. 박막은 RF power가 증가할수록 두께가 증가되는 것을 확인하였다. 광투과율 측정한 결과, 550~850nm는 RF power가 50W, 100W, 150W일 때 모두 투과율이 대략 70% 이상으로 관찰되었다. RF power가 증가되면 두께가 증가되고 입자 크기가 커지므로 박막의 밀도가 증가되어 광투과율이 감소되었다. RF power를 100W로 하고 증착시간을 15분 일 때, 밴드갭은 3.998eV로 계산되었다. 증착시간을 20분일 때, 3.987eV이고 150W는 15분에서는 3.965eV이며 20분에서는 3.831eV이다. RF power가 증가하면 밴드갭이 증가하는 것으로 측정되었다. XRD 분석에서 RF power와 증착시간의 변화에 관계없이 2Θ=26.44에서의 회절 피크를 관찰할 수가 있었다. 반치폭은 증착시간이 증가하면 감소되는 것을 알 수가 있었다. 그리고 RF power를 일정하게 하고 증착시간을 증가하면 입자크기는 증가되는 것으로 측정되었다.

New SMOLED Deposition System for Mass Production

  • Lee, J.H.;Kim, C.W.;Choi, D.K.;Kim, D.S.;Bae, K.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.407-410
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    • 2003
  • We will introduce our new concept deposition system for SMOLED manufacturing in this conference. This system is designed to deposit organic and metal material to downward to overcome the limit of substrate size and process tact time hurdle for OLED mass production, and is organized with organic deposition chamber, substrate pre-cleaning chamber, metal deposition chamber and encapsulation system. These entire process chambers are integrated with linear type substrate transfer system. We also compare our new SMOLED manufacturing system with conventional vacuum deposition systems, and show basic organic thin film property data, organic material deposition property data, and basic device property.

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빔 위치 관련 제어인자가 집속이온빔 패턴 증착공정에 미치는 영향 (The Influence of Parameters Controlling Beam Position On-Sample During Deposition Patterning Process with Focused Ion Beam)

  • 김준현;송춘삼;김윤제
    • 대한기계학회논문집A
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    • 제32권3호
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    • pp.209-216
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    • 2008
  • The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

The Study on the Uniformity, Deposition Rate of PECVD SiO2 Deposition

  • Eun Hyeong Kim;Yoon Hee Choi;Hyeon Ji Jeon;Woo Hyeok Jang;Garam Kim
    • 반도체디스플레이기술학회지
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    • 제23권2호
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    • pp.87-91
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    • 2024
  • SiO2, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO2 films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO2 films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO2 films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

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고밀도 칩 신뢰성 개선을 위한 buffered deposition 소자구조에 관한 연구 (A Study on Buffered Deposition Device Structure to Improvement for High Density Chip Realiability)

  • 김환석;이천희
    • 한국시뮬레이션학회논문지
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    • 제17권2호
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    • pp.13-19
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    • 2008
  • 본 연구에서는 드레인 부근의 채널 영역에서 접합 전계를 줄이는 Buffered deposition 구조의 소자를 제안하였다. Buffered deposition 구조의 소자 제작은 첫 번째 게이트를 식각한 후에 NM1(N-type Minor1) 이온주입을 하고 다시 HLD막과 질화막을 덮어 식각하여 제작하였다. 이러한 Buffered deposition 구조는 전계를 줄이기 위한 버퍼층으로 되어 있으며 Buffered deposition 소자의 여러 가지 구조의 Hot carrier 수명을 비교하였으며 열화 특성도 분석하여 10년간의 Hot carrier 수명을 만족함을 증명하였다.

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타이타늄 합금에 다양한 두께로 코팅된 TiN 피막의 기계적 성질 (MECHANICAL PROPERTIES OF TIN COATED FILM WITH VARIOUS COATING THICKNESS ON TITANIUM ALLOY)

  • 이재윤;오동준;김희중;정재헌
    • 대한치과보철학회지
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    • 제45권5호
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    • pp.675-686
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    • 2007
  • Statement of problem: Titanium nitride(TiN) coatings are the most general and popular coating method and used to improve the properties of metallic surface for industrial purposes. When TiN coating applied to the abutment screw, frictional resistance would be reduced, as a results, the greater preload and prevention of the screw loosening could be expected. Purpose: The purpose of this study was to investigate mechanical properties of TiN coated film of various coating thickness on the titanium alloy surface and to evaluate proper coating thickness. Material and method: 95 Titanium alloy (Ti-6Al-4V) discs of 15 mm in diameter and 3 mm in thickness were prepared for TiN coating and divided into 7 groups in this study. Acceding to coating deposition time (CDT) with TiN by using Arc ion plating, were divided into 7 groups : Group A (CDT 30min), Group B (CDT 60min), Group C (CDT 90min), Group D (CDT 120min), Group E (CDT 150min), Group F(CDT 180min) and Group G (no CDT) as a control group. TiN coating surface was observed with Atomic Force Microscope(AFM), field emission scanning electron microscopy(FE-SEM) and examined with scratch tester, wear tester. Result: 1. Coating thickness fir each coated group was increased in proportion to coating deposition time. 2. Surface of all coated groups except Group A was homogeneous and smooth. However, surface of none coated Group G had scratch. 3. Adhesion strength for each coated group was increased in proportion to coating deposition time. 4. Wear resistance for each coated group was increased in proportion to coating deposition time. 5. Surface roughness in Group A, B, C was increased in proportion to coating deposition time. But, surface roughness in Group D, E, F was showed decreased tendency in proportion to coating deposition time. Conclusion: According to coating deposition time, mechanical properties of TiN coated film were changed. It was considered that 120 minutes coating deposition time ($1.32{\mu}m$ in coating thickness) is necessary.

Cu층 증착시간에 따른 Cu2ZnSnS4 (CZTS) 박막의 특성 (Characterization of the Cu-layer deposition time on Cu2ZnSnS4 (CZTS) Thin Film Solar Cells Fabricated by Electro-deposition)

  • 김윤진;김인영;강명길;문종하;김진혁
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.16-20
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    • 2016
  • $Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.