• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.3
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• pp.501-508
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• 1987

Experimental studies of particle (TiO$\_$2/) deposition from the laminar hot gas particle flow (about 1565K) onto the cold wall surface (about 1215K-1530K) were carried out by the 'real time' laser light reflectivity method (LLRM) and the photographs of scanning electron microscope(SEM). The LLRM was used for the measurement of thermophoretic deposition rates of small particles (d$\_$p/<3.mu.m), and the photographs of SEM were used for determining what factors control the collection of particles having diameters ranging from 0.2 to 30 microns. Two phenomena are primarily responsible for transport of the particles across the laminar boundary layers and deposition: (1) particle thermophoresis (i.e. particles migration down a temperature gradient), and (2) particle inertial impaction, the former effect being especially larger factor of the particle deposition in its size over the range of 0.2 to 1 microns. And also, this study indicates that thermophoresis can be important for particles as large as 15 microns. Beyond d$\_$p/=16.mu.m, this effect diminishes and the inertial impaction is taken into account as a dominant mechanism of particle deposition. The results of present experiments found to be in close agreement with existing theories.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.45-48
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• 2007

Thermochemical 2-step methane reforming, involving the reduction of metal oxide with methane to produce syn-gas and the oxidation of the reduced metal oxide with water to produce pure hydrogen, was investigated on ferrite-based metal oxide mediums and $WO_{3}/ZrO_{2}$. Thermochemical 2-step methane reforming were accomplished at 900 $^{\circ}C$(syn-gas production step) and 800 $^{\circ}C$(water-splitting step). In syn-gas production step, it appeared carbon deposition on metal oxides with increasing react ion time. Various mediums showed the different starting point of carbon deposition each other. To minimize the carbon deposition, the reaction time was controlled before the starting point of carbon deposition. As a result, $CO_{x}$ were not evolved in water-splitting step, Among the various metal oxides, $Mn-ferrite/ZrO_{2}$ showed high reactivity, proper $H_{2}/CO$ ratio, high selectivity of undesired $CO_{2}$ and high evolution of $H_{2}$.

• The Journal of Korean Academy of Prosthodontics
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• v.39 no.6
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• pp.633-640
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• 2001

Statement of problem. Relatively low success rate of root analogue implant system was supposed to be due to the time duration between extraction and implant installation. The use of three-dimensional computer tomography and the reconstruction of objects using rapid prototyping methods would be helpful to shorten this time. Purpose. This aim of this study was to evaluate the application possibility of the 3-dimensional computer tomography and the rapid prototyping to root analogue implants. Material and methods. Ten single rooted teeth were prepared. Width and height of the teeth were measured by the marking points. This was followed by CT scanning, data conversion and rapid prototyping model fabrication. 2 methods were used; fused deposition modelling and stereolithography. Same width and height of this models were measured and compared to the original tooth. Results. Fused deposition modelling showed an enlarged width and reduced height. The stereolithography showed more exact data compared with the fused deposition modelling. Smaller standard deviation were recorded in the stereolithographic method. Overall width error from tooth to rapid prototyping was 7.15% in fused deposition modelling and 0.2% in stereolithography. Overall height showed the tendency of reducing dimensions. Conclusion. From the results of this study, stereolithography seems to be very predictable method of fabricating root analogue implant.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.3 no.3
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• pp.12-19
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• 2000

The purpose of this study is to evaluate the channel changes according to the temporal and spatial distribution of the deposition area by the vegetation invasion in Kyesung-river. The deposition area mainly occurred by landslide and debris flow from the headwater channel. And also the movement of subsequent downstream depends upon the site of deposits by a varity erosional processes. As the age of deposition area is older, it had a tendency to stable by plant invasion relatively. The vegetations grown in deposition area were very effective to estimate a historical deformation process of river-bed occurred by landslide. The vegetations around deposition area consisted of the same as tree species grown in forest area of circumference like Pinus densiflora, Styrax japonica, Quercus acutissima and Salix gracilistyla. If the torrential stream is flooding, the deposition area of 1 to 5 years can be change to the channel easily. Deposition area of 11 to 23 years had a high river-bed because it passed long time since deposited, and amount of sedimention is much more in wide than in narrow channel. It is consider that the change of channel had many influenced by the span of survial time, scale and movement frequency of deposition area after the vegetation invasion.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.185-190
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• 2003

Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.43-50
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• 1998

Transparent and conducting tin oxide films were prepared on Pyrex glass substrates by the remote plasma chemical vapor deposition (RPCVD). The main control variables of the RPCVD process included the deposition time, the flow rates of tetramethyltin, oxygen and argon, the radio-frequency power, and the substrate temperature. Dependence of the deposition rate, electric resistivity, optical transmittance and crystal structure on these parameters was systematically examined to prepare high qualities of tin oxide films and to better understand RPCVD process. The effect of those parameters on the properties of tin oxide films in complicatedly related on another. A tin oxide film parameters on the protimized deposition conditions exhibited deposition rate of 102 $\AA$/min, electric resistivity of $9.7\times 10^{-3}\Omega$cm and visible transmittance of ~80%.