• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.6-6
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• 2010

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode (Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of 100~400[$^{\circ}C$]. The surface roughness of deposition temperature($300^{\circ}C$) showed about 4.33[nm]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.560-564
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.156-164
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• 1984

The characteristic of pyrolytic carbon deposited in a fluidized bed as measured by density apparent crystallite size and viewed metallographically under polarized light can be easily controlled by adjusting the deposition parameters such as deposition temperature and propane flow rate or silicon content. The density of isotopic pyrolytic carbons deposited from propane between 120$0^{\circ}C$ and 140$0^{\circ}C$ increases with increasing propane flow rate and decreasing deposition temperature from 1, 73g/cc to 2.08g/cc. The apparent crystallite size Lc parameter appears to depend only on deposition temperature being entirely independent of the propane flow rate. The carbon matrix density of the silicon-alloyed carbonds deposited from propane and methyltrichlorosil-ane from 2.05g/cc for a silicon content around 9wt% to 2.67g/cc for a silicon content of 36.7wt% The Lc parameter of the deposition temperature being entirely independent of the silicon content.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.585-592
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• 1991

ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.144-148
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• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1547-1550
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• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• The Korean Journal of Ecology
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• v.11 no.4
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• pp.193-200
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• 1988

The amount of Pinus rigida pollen deposition was hourly measured by Durhan's pollen trap in Seoul National University during May 9∼16 o'clock and 9∼15, 1988. The peak times or pollen deposition were 9∼10 o'clock and 16∼17 o'clock. The correlation coefficients between pollen deposition and mean temperature, relative humidity, and wind speed were 0.625, -0.655 and 0.418 respectively, It is thought that pollen maturation rate is correlated with mean temperature and the pollen deposition with increasing wind speed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.3
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• pp.436-444
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• 1997

Three-dimensional conjugate heat transfer and particle deposition on a circular cylinder in the OVD process are numerically investigated. Flow and temperature fields are obtained by an iterative method, and thermophoretic particle deposition is simulated. Effects of the heat conduction in the cylinder, the rotation speed of the cylinder, and the traversing speed of torch on the deposition are studied. Effects of variable properties are also included. As the conductivity of the cylinder decreases, particle deposition rate and deposition efficiency greatly decrease due to the reduced temperature gradient. The rotation of the cylinder has no significant effect on the deposition due to the small diameter of the cylinder and low speed of rotation. Since the increase of the torch speed keeps the surface low temperature, the particle deposition increases with the traversing speed.

• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.